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Laurent Vivien

Laurent Vivien contributes to research discovery and scholarly infrastructure.

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Published work

7 published item(s)

preprint2023arXiv

Genetic optimization of Brillouin scattering gain in subwavelength-structured silicon membrane waveguides

On-chip Brillouin optomechanics has great potential for applications in communications, sensing, and quantum technologies. Tight confinement of near-infrared photons and gigahertz phonons in integrated waveguides remains a key challenge to achieving strong on-chip Brillouin gain. Here, we propose a new strategy to harness Brillouin gain in silicon waveguides, based on the combination of genetic algorithm optimization and periodic subwavelength structuration to engineer photonic and phononic modes simultaneously. The proposed geometry is composed of a waveguide core and a lattice of anchoring arms with a subwavelength period requiring a single etch step. The waveguide geometry is optimized to maximize the Brillouin gain using a multi-physics genetic algorithm. Our simulation results predict a remarkable Brillouin gain exceeding 3300 1/(W m), for a mechanical frequency near 15 GHz.

preprint2022arXiv

Low-Power consumption Franz-Keldysh effect plasmonic modulator

In this paper we report on a low energy consumption CMOS-compatible plasmonic modulator based on Franz-Keldysh effect in germanium on silicon. We performed integrated electro-optical simulations in order to optimize the main characteristics of the modulator. A 3.3 $dB$ extinction ratio for a 30 $μm$ long modulator is demonstrated under 3 $V$ bias voltage at an operation wavelength of 1647 $nm$. The estimated energy consumption is as low as 20 $fJ/bit$.

preprint2021arXiv

Boosting the SiN nonlinear photonic platform with transition metal dichalcogenide monolayers

In the past few years, we have witnessed an increased interest in the use of 2D materials for the realization of hybrid photonic nonlinear waveguides. Although graphene has attracted most of the attention, other families of 2D materials such as transition metal dichalcogenides have also shown promising nonlinear performances. In this work, we propose a strategy for designing silicon nitride waveguide structures embedded with molybdenum disulfide for nonlinear applications. The transverse geometry of the hybrid waveguides structure is optimized for high third order nonlinear effects using optogeometrical engineering and multiple layers of molybdenum disulfide. Stacking multiple monolayers, results in an improvement of 2 orders of magnitude in comparison with standard silicon nitride waveguides. The performance of the hybrid waveguides is then investigated in terms of four wave mixing enhancement in micro ring resonator configurations. A 6,3 dB signal idler conversion efficiency is reached around 1550 nm wavelength for a 5 mW pumping level.

preprint2020arXiv

High-quality photonic entanglement based on a silicon chip

The fruitful association of quantum and integrated photonics holds the promise to produce, manipulate, and detect quantum states of light using compact and scalable systems. Integrating all the building-blocks necessary to produce high-quality photonic entanglement in the telecom wavelength range out of a single chip remains a major challenge, mainly due to the limited performance of on-chip light rejection filters. We report a stand-alone, telecom-compliant, device that integrates, on a single substrate, a nonlinear photon-pair generator and a passive pump rejection filter. Using standard channel-grid fiber demultiplexers, we demonstrate the first entanglement quantification of such a integrated circuit, showing the highest raw quantum interference visibility for energy-time entangled photons over two telecom-wavelength bands. Genuinely pure maximally entangled states can therefore be generated thanks to the high-level of noise suppression obtained with the pump filter. These results will certainly further promote the development of more advanced and scalable photonic-integrated quantum systems compliant with telecommunication standards.

preprint2010arXiv

Enhancement of semiconducting single-wall carbon nanotubes photoluminescence

Photoluminescence properties of semiconducting single wall carbon nanotubes (s-SWNT) thin films with different metallic single wall carbon nanotubes (m-SWNT) concentrations are reported. s-SWNT purified samples are obtained by polymer assisted selective extraction. We show that a few m-SWNT in the sample generates a drastic quenching of the emission. Therefore, highly purified s-SWNT films are a strongly luminescent material and a good candidate for future applications in photonics, such as near infrared emitters, modulators and detectors.

preprint2010arXiv

Optical Gain in Carbon Nanotubes

Semiconducting single-wall carbon nanotubes (s-SWNTs) have proved to be promising material for nanophotonics and optoelectronics. Due to the possibility of tuning their direct band gap and controlling excitonic recombinations in the near-infrared wavelength range, s-SWNT can be used as efficient light emitters. We report the first experimental demonstration of room temperature intrinsic optical gain as high as 190 cm-1 at a wavelength of 1.3 μm in a thin film doped with s-SWNT. These results constitute a significant milestone toward the development of laser sources based on carbon nanotubes for future high performance integrated circuits.

preprint2010arXiv

Optical microcavity with semiconducting single-wall carbon nanotubes

We report studies of optical Fabry-Perot microcavities based on semiconducting single-wall carbon nanotubes with a quality factor of 160. We experimentally demonstrate a huge photoluminescence signal enhancement by a factor of 30 in comparison with the identical film and by a factor of 180 if compared with a thin film containing non-purified (8,7) nanotubes. Futhermore, the spectral full-width at half-maximum of the photo-induced emission is reduced down to 8 nm with very good directivity at a wavelength of about 1.3 $μ$m. Such results prove the great potential of carbon nanotubes for photonic applications.