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Eric Cassan

Eric Cassan appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
physics.opticscond-mat.mtrl-scicond-mat.mes-hallcond-mat.otherphysics.app-ph

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Published work

8 published item(s)

preprint2023arXiv

Genetic optimization of Brillouin scattering gain in subwavelength-structured silicon membrane waveguides

On-chip Brillouin optomechanics has great potential for applications in communications, sensing, and quantum technologies. Tight confinement of near-infrared photons and gigahertz phonons in integrated waveguides remains a key challenge to achieving strong on-chip Brillouin gain. Here, we propose a new strategy to harness Brillouin gain in silicon waveguides, based on the combination of genetic algorithm optimization and periodic subwavelength structuration to engineer photonic and phononic modes simultaneously. The proposed geometry is composed of a waveguide core and a lattice of anchoring arms with a subwavelength period requiring a single etch step. The waveguide geometry is optimized to maximize the Brillouin gain using a multi-physics genetic algorithm. Our simulation results predict a remarkable Brillouin gain exceeding 3300 1/(W m), for a mechanical frequency near 15 GHz.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Boosting the SiN nonlinear photonic platform with transition metal dichalcogenide monolayers

In the past few years, we have witnessed an increased interest in the use of 2D materials for the realization of hybrid photonic nonlinear waveguides. Although graphene has attracted most of the attention, other families of 2D materials such as transition metal dichalcogenides have also shown promising nonlinear performances. In this work, we propose a strategy for designing silicon nitride waveguide structures embedded with molybdenum disulfide for nonlinear applications. The transverse geometry of the hybrid waveguides structure is optimized for high third order nonlinear effects using optogeometrical engineering and multiple layers of molybdenum disulfide. Stacking multiple monolayers, results in an improvement of 2 orders of magnitude in comparison with standard silicon nitride waveguides. The performance of the hybrid waveguides is then investigated in terms of four wave mixing enhancement in micro ring resonator configurations. A 6,3 dB signal idler conversion efficiency is reached around 1550 nm wavelength for a 5 mW pumping level.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Long-period suspended silicon Bragg grating filter for hybrid near- and mid-infrared operation

The large transparency window of silicon, covering the 1.1 um 8 um wavelength range, makes it a promising platform for the implementation of photothermal-based absorption spectrometers. These devices indirectly sense absorption in the mid-infrared (MIR) by using near-infrared (NIR) wavelengths, thereby enabling the realization of MIR absorption spectrometers without the need for MIR photodetectors. Nevertheless, due to their comparatively large index contrast and cross-sections, MIR Si strip waveguides are multi-mode at NIR wavelengths, hindering device implementation. Here we present, for the first time, an integrated Bragg grating waveguide filter for hybrid near- and mid-infrared operation. Specifically, the filter is implemented in a single-etch suspended silicon corrugated waveguide with an effectively single-mode operation in NIR region for a waveguide cross-section as large as 0.5 um x 1.1 um. At the same time, the waveguide supports single-mode propagation in MIR region. We demonstrate a long-period waveguide Bragg grating yielding a sharp third-order Bragg resonance for the fundamental waveguide mode and radiating the higher order modes. We experimentally demonstrate a notch filter with a 4nm bandwidth and 40 dB extinction ratio with a temperature-dependent Bragg wavelength shift of 70pm/K.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Bond orbital description of the strain induced second order optical susceptibility in silicon

We develop a theoretical model, relying on the well established sp3 bond-orbital theory, to describe the strain-induced $χ^{(2)}$ in tetrahedrally coordinated centrosymmetric covalent crystals, like silicon. With this approach we are able to describe every component of the $χ^{(2)}$ tensor in terms of a linear combination of strain gradients and only two parameters $α$ and $β$ which can be estimated theoretically. The resulting formula can be applied to the simulation of the strain distribution of a practical strained silicon device, providing an extraordinary tool for optimization of its optical nonlinear effects. By doing that, we were able not only to confirm the main valid claims known about $χ^{(2)}$ in strained silicon, but also estimate the order of magnitude of the $χ^{(2)}$ generated in that device.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electroabsorption study of index-defined semiconducting carbon nanotubes

Electroabsorption spectroscopy of well-identified index-defined semiconducting carbon nanotubes is reported. The measurement of high definition electroabsorption spectra allows direct indexation with unique nanotube chirality. Results show that at least for a limited range of diameters, electroabsorption is directly proportional to the exciton binding energy of nanotubes. Electroabsorption is a powerful technique which directly probes into carbon nanotube excitonic states, and may become a useful tool for in situ study of excitons in future nanotube-based photonic devices such as electroabsorption modulators.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Enhancement of semiconducting single-wall carbon nanotubes photoluminescence

Photoluminescence properties of semiconducting single wall carbon nanotubes (s-SWNT) thin films with different metallic single wall carbon nanotubes (m-SWNT) concentrations are reported. s-SWNT purified samples are obtained by polymer assisted selective extraction. We show that a few m-SWNT in the sample generates a drastic quenching of the emission. Therefore, highly purified s-SWNT films are a strongly luminescent material and a good candidate for future applications in photonics, such as near infrared emitters, modulators and detectors.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Optical Gain in Carbon Nanotubes

Semiconducting single-wall carbon nanotubes (s-SWNTs) have proved to be promising material for nanophotonics and optoelectronics. Due to the possibility of tuning their direct band gap and controlling excitonic recombinations in the near-infrared wavelength range, s-SWNT can be used as efficient light emitters. We report the first experimental demonstration of room temperature intrinsic optical gain as high as 190 cm-1 at a wavelength of 1.3 μm in a thin film doped with s-SWNT. These results constitute a significant milestone toward the development of laser sources based on carbon nanotubes for future high performance integrated circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Optical microcavity with semiconducting single-wall carbon nanotubes

We report studies of optical Fabry-Perot microcavities based on semiconducting single-wall carbon nanotubes with a quality factor of 160. We experimentally demonstrate a huge photoluminescence signal enhancement by a factor of 30 in comparison with the identical film and by a factor of 180 if compared with a thin film containing non-purified (8,7) nanotubes. Futhermore, the spectral full-width at half-maximum of the photo-induced emission is reduced down to 8 nm with very good directivity at a wavelength of about 1.3 $μ$m. Such results prove the great potential of carbon nanotubes for photonic applications.

0 citations0 reviewsNo code linkedOpen access