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Researcher profile

Lars Rippe

Lars Rippe contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
quant-phphysics.atom-phphysics.optics

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Published work

4 published item(s)

preprint2022arXiv

Microscopic model of spin flip-flop processes in rare-earth-ion-doped crystals

Flip-flop processes due to magnetic dipole-dipole interaction between neighbouring ions in rare-earth-ion-doped crystals is one of the mechanisms of relaxation between hyperfine levels. Modeling of this mechanism has so far been macroscopic, characterized by an average rate describing the relaxation of all ions. Here however, we present a microscopic model of flip-flop interactions between individual nuclear spins of dopant ions. Every ion is situated in a unique local environment in the crystal, where each ion has different distances and a unique orientation relative to its nearest neighbors, as determined by the lattice structure. Thus, each ion has a unique flip-flop rate and the collective relaxation dynamics of all ions in a bulk crystal is a sum of many exponential decays, giving rise to a distribution of rates rather than a single average decay rate. We employ this model to calculate flip-flop rates in Pr$^{3+}$:Y$_2$SiO$_5$ and show experimental measurements of population decay of the ground state hyperfine levels at $\sim$2 K. We also present a new method to measure rates of individual transitions from hole burning spectra that requires significantly fewer fitting parameters in theoretical rate equations compared to earlier work. Furthermore, we measure the effect of external magnetic field on the flip-flop rates and observe that the rates slow down by two orders of magnitude in a field of 5 - 10 mT.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Slow Light Frequency Reference Cavities -- Proof of Concept for Reducing the Frequency Sensitivity Due to Length Fluctuations

Length changes due to thermo-mechanical noise originating from, for example, Brownian motion are a key limiting factor of present day state-of-the-art laser frequency stabilization using Fabry-Pérot cavities. We present a laser-frequency stabilization concept using an optical cavity with a strong slow-light effect to reduce the impact of cavity length changes on the frequency stability. The resulting noise-reduction factor is proportional to the ratio between the light phase and group velocities in the highly dispersive cavity spacer. We experimentally demonstrate a proof-of-principle implementation of this laser-frequency stabilization technique using a rare-earth doped crystalline cavity spacer in conjunction with semi-permanent spectral tailoring to achieve precise control of the dispersive properties of the cavity. Compared to the same setup in the absence of the slow-light effect a reduction in frequency sensitivity of four orders of magnitude was achieved.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

High connectivity quantum processor nodes using single-ion-qubits in rare-earth-ion-doped crystals

We present two protocols for constructing quantum processor nodes in randomly doped rare-earth-ion crystals and analyze their properties. By varying the doping concentration and the accessible laser tunability, the processor nodes can contain anywhere from only a few tens to almost $1000$ qubits. Furthermore, the average number of qubits each qubit can interact with, denoted by the connectivity, can be partly tailored to lie between just a few and roughly one hundred. We also study how a limited tunability of the laser affects the results, and conclude that a tuning range of $100$ GHz limits the results to roughly $100$ qubits with around $50$ connections per qubit on average. In order to construct an even larger processor, the vision is that several of these quantum processor nodes should be connected to each other in a multi-node architecture via, e.g., optical interfaces or flying qubits in the form of light. Our results are encouraging for establishing the rare-earth-ion-based systems as a quantum computing platform with strong potential and can serve to focus the efforts within the field.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Microscopic treatment of instantaneous spectral diffusion and its effect on quantum gate fidelities in rare-earth-ion-doped crystals

The effect of instantaneous spectral diffusion (ISD) on gate operations in rare-earth-ion-doped crystals is an important question to answer for the future of rare-earth quantum computing. Here we present a microscopic modeling that highlights the stochastic nature of the phenomenon, and use it to investigate ISD errors on single-qubit gate operations. Furthermore, we present a method to estimate the total error from many different error sources by only studying subsystems containing one error source at a time. This allows us to estimate the total ISD error from all non-qubit dopants in the vicinity of a qubit. We conclude that optical pumping techniques must be used to empty the frequency regions around the qubit transitions from absorption (transmission windows) in order to suppress the ISD errors. Despite using such windows, there remains a roughly $0.3\%$ risk that a qubit has an ISD error larger than the error from other sources. In those cases, the qubit can be discarded and its frequency channel can be reused by another qubit. However, in most cases the ISD errors are significantly smaller than other errors, thus opening up the possibility to perform noisy intermediate-scale quantum (NISQ) algorithms despite ISD being present.

0 citations0 reviewsNo code linkedOpen access