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Lang Chen

Lang Chen contributes to research discovery and scholarly infrastructure.

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Published work

15 published item(s)

preprint2016arXiv

Achieving ultrahigh carrier mobility and photo-responsivity in solution-processed perovskite/carbon nanotubes phototransistors

Organolead trihalide perovskites have drawn substantial interest for applications in photovoltaic and optoelectronic devices due to their low processing cost and remarkable physical properties. However, perovskite thin films still suffer from low carrier mobility, limiting their device performance and application potential. Here we report that embedding single-walled carbon nanotubes into halide perovskite films can significantly enhance the hole and electron mobilities to record-high values of 595.3 and 108.7 cm2 V-1 s-1, respectively. In the ambipolar phototransistors with such hybrid channels, photo-carriers generated in the light-absorbing perovskite matrix are transported by the carbon nanotubes, leading to ultrahigh detectivity of 6 * 1014 Jones and responsivity of 1 * 104 A W-1. We find that the perovskite precursor in dimethylformamide solution serve as an excellent stabilizer for the dispersion of carbon nanotubes, which potentially extend the scope of applications of perovskites in solution-processed functional composites. The unprecedented high performances underscore the perovskite/carbon nanotubes hybrids as an emerging class of functional materials in optoelectronic and other applications.

preprint2016arXiv

Oxygen vacancy induced room temperature metal-insulator transition in nickelates films and its potential application in photovoltaics

Oxygen vacancy is intrinsically coupled with magnetic, electronic and transport properties of transition-metal oxide materials and directly determines their multifunctionality. Here, we demonstrate reversible control of oxygen content by post-annealing at temperature lower than 300 degree centigrade and realize the reversible metal-insulator transition in epitaxial NdNiO3 films. Importantly, over six orders of magnitude in the resistance modulation and a large change in optical band gap are demonstrated at room temperature without destroying the parent framework and changing the p-type conductive mechanism. Further study revealed that oxygen vacancies stabilized the insulating phase at room temperature is universal for perovskite nickelates films. Acting as electron donors, oxygen vacancies not only stabilize the insulating phase at room temperature, but also induce a large magnetization of ~50 emu/cm3 due to the formation of strongly correlated Ni2+ t2g6eg2 states. The band gap opening is an order of magnitude larger than that of the thermally driven metal-insulator transition and continuously tunable. Potential application of the newly found insulating phase in photovoltaics has been demonstrated in the nickelates-based heterojunctions. Our discovery opens up new possibilities for strongly correlated perovskite nickelates.

preprint2015arXiv

Nanosecond Phase Transition Dynamics in Compressively Strained Epitaxial BiFeO3

A highly strained BiFeO3 (BFO) thin film is transformed between phases with distinct structures and properties by nanosecond-duration applied electric field pulses. Time-resolved synchrotron x-ray microdiffraction shows that the steady-state transformation between phases is accompanied by a dynamical component that is reversed upon the removal of the field. Steady-state measurements reveal that approximately 20% of the volume of a BFO thin film grown on a LaAlO3 substrate can be reproducibly transformed between rhombohedral-like and tetragonal-like phases by electric field pulses with magnitudes up to 2 MV/cm. A transient component, in which the transformation is reversed following the end of the electric field pulse, can transform a similar fraction of the BFO layer and occurs rapidly time scale limited by the charging time constant of the thin film capacitor. The piezoelectric expansion of the tetragonal-like phase leads to a strain of up to 0.1%, with a lower limit of 10 pm/V for the piezoelectric coefficient of this phase. Density functional theory calculations provide insight into the mechanism of the phase transformation showing that imparting a transient strain of this magnitude favors a transformation from rhombohedral-like to tetragonal-like phase.

preprint2013arXiv

Large tensile strain induced monoclinic MB phase in BiFeO3 epitaxial thin films on PrScO3 substrate

Crystal and domain structures of tensile-strained BiFeO3 films grown on orthorhombic (110)o PrScO3 substrates were investigated. All films possess a MB-type monoclinic structure with 109o stripe domains oriented along the [ī10]o direction. For films thicknesses less than ~40 nm, presence of well-ordered domains is proved by the detection of satellite peaks in synchrotron x-ray diffraction studies. For thicker films, For thicker films, only the Bragg reflections from tilted domains were detected. This is attributed to the broader domain size distribution in thicker films.Using planar electrodes,the in-plane polarization of the MB phase is determined to be 85 uC/cm2, which is much larger than that of compressive strained BiFeO3 films. Our results further reveal that the substrate monoclinic distortion plays a major role in determining the stripe domain formation of the rhombohedral ferroic epitaxial thin films, which sheds light to the understanding of elastic domain structure evolution in many other functional oxide thin films as well.

preprint2013arXiv

Mechanism of Polarization Fatigue in BiFeO3: the Role of Schottky Barrier

By using piezoelectric force microscopy and scanning Kelvin probe microscopy, we have investigated the domain evolution and space charge distribution in planar BiFeO3 capacitors with different electrodes. It is observed that charge injection at the film/electrode interface leads to domain pinning and polarization fatigue in BiFeO3. Furthermore, the Schottky barrier at the interface is crucial for the charge injection process. Lowering the Schottky barrier by using low work function metals as the electrodes can also improve the fatigue property of the device, similar to what oxide electrodes can achieve.

preprint2013arXiv

Periodic elastic nanodomains in ultrathin tetrogonal-like BiFeO3 films

We present a synchrotron grazing incidence x-ray diffraction analysis of the domain structure and polar symmetry of highly strained BiFeO3 thin films grown on LaAlO3 substrate. We revealed the existence of periodic elastic nanodomains in the pure tetragonal-like BFO ultrathin films down to a thickness of 6 nm. A unique shear strain accommodation mechanism is disclosed. We further demonstrated that the periodicity of the nanodomains increases with film thickness but deviates from the classical Kittel's square root law in ultrathin thickness regime (6 - 30 nm). Temperature-dependent experiments also reveal the disappearance of periodic modulation above 90C due to a MC-MA structural phase transition.

preprint2013arXiv

Unit cell determination of epitaxial thin films based on reciprocal space vectors by high-resolution X-ray diffractometry

A new approach, based on reciprocal space vectors (RSVs), is developed to determine Bravais lattice types and accurate lattice parameters of epitaxial thin films by high-resolution X-ray diffractometry (HR-XRD). The lattice parameters of single crystal substrates are employed as references to correct the systematic experimental errors of RSVs of thin films. The general procedure is summarized, involving correction of RSVs, derivation of raw unit cell, subsequent conversion to the Niggli unit cell and the Bravais unit cell by matrix calculation.Two methods of this procedure are described in 3D reciprocal space and 6D G6-space, respectively. The estimation of standard error in the lattice parameters derived by this new approach is discussed. The whole approach is illustrated by examples of experimental data. The error of the best result is 0.0006 Å for the lattice parameter of ITO (Indium tin oxide) film. This new RSV method provides a practical and concise route to crystal structure study of epitaxial thin films, which could also be applied to the investigation of surface and interface structures.

preprint2012arXiv

Characterization and manipulation of mixed phase domains in highly-strained BiFeO3 thin films

The novel strain-driven morphotropic phase boundary (MPB) in highly-strained BiFeO3 thin film is featured by ordered mixed phase nanodomains (MPNs). Through scanning probe microscopy and synchrotron X-ray diffraction, eight structural variants of the MPNs are identified. Detailed polarization configurations within the MPNs are resolved using angular-dependent piezoelectric force microscopy. Guided by the obtained results, deterministic manipulation of the MPNs has been demonstrated by controlling the motion of the local probe. These findings are important for in-depth understanding of the ultrahigh electromechanical response arising from phase transformation between competing phases, enabling future explorations on the electronic structure, magnetoelectricity and other functionalities in this new MPB system.

preprint2012arXiv

Domain tuning in mixed-phase BiFeO3 thin films using vicinal substrates

The structural and ferroelectric domain variants of highly-strained BiFeO3 films grown on vicinal LaSrAlO4 substrates were studied by piezoelectric force microscopy and high-resolution X-ray reciprocal space mapping. Through symmetry breaking of the substrate surface, ferroelastic domain variants in the highly-strained MC phase BiFeO3 can be greatly reduced. Single-domain film can be obtained on substrates with large miscut angle, which is accompanied by the reduction of structural variants in the mixed-phase nanodomains. These findings lead to better understanding of the phase evolution and polarization rotation process in the strain-driven morphotropic phase system.

preprint2012arXiv

Study of strain effect on in-plane polarization in epitaxial BiFeO3 thin films using planar electrodes

Epitaxial strain plays an important role in determining physical properties of perovskite ferroelectric oxide thin films. However, it is very challenging to directly measure properties such as polarization in ultrathin strained films using traditional sandwich capacitor devices, because of high leakage current. We employed a planar electrode device with different crystallographical orientations between electrodes along different electric field orientation to directly measure the in-plane polarization-electric field (P-E) hysteresis loops in fully strained thin films. At high misfit strains such as -4.4%, the pure Tetrogonal-like phase is obtained and its polarization vector is constrained to lie in the (010) plane with a significantly large in-plane component, ~44 μC/cm2. First-principle calculations are carried out in parallel, and provide a good agreement with the experimental results. Our results pave the way to design in-plane devices based on T-like BFO and the strategy proposed here can be expanded to study all other similar strained multiferroic ultrathin films.

preprint2011arXiv

Coexistence of Ferroelectric Triclinic Phases and Origin of Large Piezoelectric Responses in Highly Strained BiFeO3 films

The structural evolution of the strain-driven morphotropic phase boundary (MPB) in BiFeO3 films has been investigated using synchrotron x-ray diffractometry in conjunction with scanning probe microscopy. Our results demonstrate the existence of mixed-phase regions that are mainly made up of two heavily tilted ferroelectric triclinic phases. Analysis of first-principles computations suggests that these two triclinic phases originate from a phase separation of a single monoclinic state accompanied by elastic matching between the phase-separated states. These first-principle calculations further reveal that the intrinsic piezoelectric response of these two low-symmetry triclinic phases is not significantly large, which thus implies that the ease of phase transition between these two energetically close triclinic phases is likely responsible for the large piezoelectric response found in the BiFeO3 films near its MPB. These findings not only enrich the understandings of the lattice and domain structure of epitaxial BiFeO3 films but may also shed some light on the origin of enhanced piezoelectric response near MPB.

preprint2011arXiv

Nanoscale domains in strained epitaxial BiFeO3 thin Films on LaSrAlO4 Substrate

BiFeO3 thin films with various thicknesses were grown epitaxially on (001) LaSrAlO4 single crystal substrates using pulsed laser deposition. High resolution x-ray diffraction measurements revealed that a tetragonal-like phase with c-lattice constant ~4.65 Å is stabilized by a large misfit strain. Besides, a rhombohedral-like phase with c-lattice constant ~3.99 Å was also detected at film thickness of ~50 nm and above to relieve large misfit strains. In-plane piezoelectric force microscopy studies showed clear signals and self-assembled nanoscale stripe domain structure for the tetragonal-like regions. These findings suggest a complex picture of nanoscale domain patterns in BiFeO3 thin films subjected to large compressive strains.

preprint2011arXiv

Temperature-driven evolution of hierarchical nanodomain structure in tetragonal-like BiFeO3 films

Transmission electron microscopy study of tetragonal-like BiFeO3 films reveals a hitherto unreported hierarchical nanodomain structure. The 30-50 nm wide stripe domains with {110} domain walls consist of a substructure of lamellar nanodomains of 8-10 nm width in a herringbone-like arrangement. In situ heating and cooling reveals a reversible transition from the hierarchical nanodomain structure to a tweed-like domain structure which is accompanied by a first-order phase transition near 120 °C with a thermal hysteresis.

preprint2010arXiv

Low-Symmetry Monoclinic Phases and Polarization Rotation Path Mediated By Epitaxial Strain in Multiferroic BiFeO3 Thin Films

A morphotropic phase boundary driven by epitaxial strain has been observed in a lead-free multiferroic BiFeO3 thin films and the strain-driven phase transitions were widely reported to be iso-symmetric Cc-Cc ones by recent works. In this paper, we suggest that the tetragonal-like BiFeO3 phase identified in epitaxial films on (001) LaAlO3 single crystal substrates is monoclinic MC. This MC phase is different from MA type monoclinic phase reported in BiFeO3 films grown on low mismatch substrates, such as SrTiO3. This is confirmed not only by synchrotron x-ray studies but also by piezoresponse force microscopy measurements. The polarization vectors of the tetragonal-like phase lie in the (100) plane, not the (110) plane as previously reported. A phenomenological analysis was proposed to explain the formation of MC Phase. Such a low symmetry MC phase, with its linkage to MA phase and the multiphase coexistence open an avenue for large piezoelectric response in BiFeO3 films and shed light on a complete understanding towards possible polarization rotation paths and enhanced multiferroicity in BiFeO3 films mediated by epitaxial strain. This work may also aid the understanding of developing new lead-free strain-driven morphotropic phase boundary in other ferroic systems.

preprint2010arXiv

Total transmission and total reflection by zero index materials

In this report, we achieved total transmission and reflection in a slab of zero index materials with defect(s). By controlling the defect's radius and dielectric constant, we can obtain total transmission and reflection of EM wave. The zero index materials, in this report, stand for materials with permittivity and permeability which are simultaneously equal to zero or so called matched impedance zero index materials. Along with theoretical calculations and simulation demonstrations, we also discuss about some possible applications for the proposed structure such as shielding or cloaking an object without restricting its view. We also suggest a way to control total transmission and reflection actively by using tunable refractive index materials such as liquid crystal and BST. The physics behind those phenomena is attributed to intrinsic properties of zero index materials: constant field inside zero index slab.