Researcher profile

L. Sudheendra

L. Sudheendra contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 13 - Baseline
2works
0followers
3topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2010arXiv

Memristor Behaviour in Nano-Sized Vertical Lsmo/Lsmo Tunnel Junctions

We report a memory resistance (memristor) behavior with nonlinear current-voltage characteristics and bipolar hysteretic resistance switching in the nanocolumnar manganite (LSMO) films. The switching from a high (HRS) to a low (LRS) resistance occurs at a bias field ~1 MV/cm. Applied electric field drops mostly at the insulating interfacial LSMO layer and couples to correlated polarons at the LSMO(111)/LSMO(111) vertical interfaces. The observed memristance behaviour has an electronic (polaronic) origin and is caused by an electric-field-controlled Jahn-Teller (JT) effect, followed by the orbital reconstruction and formation of a metastable orbitally disordered interfacial phase (LRS). Compared to the earlier reported ionic memristor in Ti-O films, an electronic (polaronic) nano-sized LSMO memristor shows an additional (re-entrant) LRS-HRS switching at higher fields because of the second minimum in the elastic energy of a JT system.

preprint2003arXiv

Electronic phase separation in the rare earth manganates, (La1-xLnx)0.7Ca0.3MnO3 (Ln = Nd, Gd and Y)

All the three series of manganates showsaturation magnetization characteristic of ferromagnetism, with the ferromagnetic Tc decreasing with increasing in x up to a critical value of x, xc (xc = 0.6, 0.3, 0.2 respectively for Nd, Gd, Y). For x > xc, the magnetic moments are considerably smaller showing a small increase around TM, the value of TM decreasing slightly with increase in x or decrease in < rA >. The ferromagnetic compositions (x xc) show insulator-metal (IM) transitions, while the compositions with x > xc are insulating. The magnetic and electrical resistivity behavior of these manganates is consistent with the occurrence of phase separation in the compositions around xc, corresponding to a critical average radius of the A-site cation, < rAc >, of 1.18 A. Both Tc and TIM increase linearly when < rA > > < rAc > or x xc as expected of a homogenous ferromagnetic phase. Both Tc and TM decrease linearly with the A-site cation size disorder at the A-site as measured by the variance s2. Thus, an increase in s2 favors the insulating AFM state. Percolative conduction is observed in the compositions with < rA > > < rAc >. Electron transport properties in the insulating regime for x > xc conforms to the variable range hopping mechanism. More interestingly, when x > xc, the real part of dielectric constant (e&#39;) reaches a high value (104-106) at ordinary temperatures dropping to a very small (~500) value below a certain temperature, the value of which decreases with decreasing frequency.