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L. Petit

L. Petit appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elquant-ph

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Published work

10 published item(s)

preprint2020arXiv

High-fidelity two-qubit gates in silicon above one Kelvin

Spin qubits in quantum dots define an attractive platform for scalable quantum information because of their compatibility with semiconductor manufacturing, their long coherence times, and the ability to operate at temperatures exceeding one Kelvin. Qubit logic can be implemented by pulsing the exchange interaction or via driven rotations. Here, we show that these approaches can be combined to execute a multitude of native two-qubit gates in a single device, reducing the operation overhead to perform quantum algorithms. We demonstrate, at a temperature above one Kelvin, single-qubit rotations together with the two-qubit gates CROT, CPHASE and SWAP. Furthermore we realize adiabatic, diabatic and composite sequences to optimize the qubit control fidelity and the gate time. We find two-qubit gates that can be executed within 67 ns and by theoretically analyzing the experimental noise sources we predict fidelities exceeding 99%. This promises fault-tolerant operation using quantum hardware that can be embedded with classical electronics for quantum integrated circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin relaxation benchmarks and individual qubit addressability for holes in quantum dots

We investigate hole spin relaxation in the single- and multi-hole regime in a 2x2 germanium quantum dot array. We use radiofrequency (rf) charge sensing and observe Pauli Spin-Blockade (PSB) for every second interdot transition up to the (1,5)-(0,6) anticrossing, consistent with a standard Fock-Darwin spectrum. We find spin relaxation times $T_1$ as high as 32 ms for a quantum dot with single-hole occupation and 1.2 ms for a quantum dot occupied by five-holes, setting benchmarks for spin relaxation times for hole quantum dots. Furthermore, we investigate the qubit addressability and sensitivity to electric fields by measuring the resonance frequency dependence of each qubit on gate voltages. We are able to tune the resonance frequency over a large range for both the single and multi-hole qubit. Simultaneously, we find that the resonance frequencies are only weakly dependent on neighbouring gates, and in particular the five-hole qubit resonance frequency is more than twenty times as sensitive to its corresponding plunger gate. The excellent individual qubit tunability and long spin relaxation times make holes in germanium promising for addressable and high-fidelity spin qubits in dense two-dimensional quantum dot arrays for large-scale quantum information.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Tunable coupling and isolation of single electrons in silicon metal-oxide-semiconductor quantum dots

Extremely long coherence times, excellent single-qubit gate fidelities and two-qubit logic have been demonstrated with silicon metal-oxide-semiconductor spin qubits, making it one of the leading platforms for quantum information processing. Despite this, a long-standing challenge in this system has been the demonstration of tunable tunnel coupling between single electrons. Here we overcome this hurdle with gate-defined quantum dots and show couplings that can be tuned on and off for quantum operations. We use charge sensing to discriminate between the (2,0) and (1,1) charge states of a double quantum dot and show excellent charge sensitivity. We demonstrate tunable coupling up to 13 GHz, obtained by fitting charge polarization lines, and tunable tunnel rates down to below 1 Hz, deduced from the random telegraph signal. The demonstration of tunable coupling between single electrons in a silicon metal-oxide-semiconductor device provides significant scope for high-fidelity two-qubit logic toward quantum information processing with standard manufacturing.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

A single-hole spin qubit

Qubits based on quantum dots have excellent prospects for scalable quantum technology due to their inherent compatibility with standard semiconductor manufacturing. While early on it was recognized that holes may offer a multitude of favourable properties for fast and scalable quantum control, research thus far has remained almost exclusively restricted to the simpler electron system. However, recent developments with holes have led to separate demonstrations of single-shot readout and fast quantum logic, albeit only in the multi-hole regime. Here, we establish a single-hole spin qubit in germanium and demonstrate the integration of single-shot readout and quantum control. Moreover, we make use of Pauli spin blockade, allowing to arbitrarily set the qubit resonance frequency, while providing large readout windows. We deplete a planar germanium double quantum dot to the last hole, confirmed by radio-frequency reflectrometry charge sensing, and achieve single-shot spin readout. To demonstrate the integration of the readout and qubit operation, we show Rabi driving on both qubits and find remarkable electric control over their resonance frequencies. Finally, we analyse the spin relaxation time, which we find to exceed one millisecond, setting the benchmark for hole-based spin qubits. The ability to coherently manipulate a single hole spin underpins the quality of strained germanium and defines an excellent starting point for the construction of novel quantum hardware.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Quantum Dot Arrays in Silicon and Germanium

Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become practical, large numbers of quantum dots will be required, necessitating the fabrication of scaled structures such as linear and 2D arrays. Group IV semiconductors contain stable isotopes with zero nuclear spin and can thereby serve as excellent host for spins with long quantum coherence. Here we demonstrate group IV quantum dot arrays in silicon metal-oxide-semiconductor (SiMOS), strained silicon (Si/SiGe) and strained germanium (Ge/SiGe). We fabricate using a multi-layer technique to achieve tightly confined quantum dots and compare integration processes. While SiMOS can benefit from a larger temperature budget and Ge/SiGe can make ohmic contact to metals, the overlapping gate structure to define the quantum dots can be based on a nearly identical integration. We realize charge sensing in each platform, for the first time in Ge/SiGe, and demonstrate fully functional linear and two-dimensional arrays where all quantum dots can be depleted to the last charge state. In Si/SiGe, we tune a quintuple quantum dot using the N+1 method to simultaneously reach the few electron regime for each quantum dot. We compare capacitive cross talk and find it to be the smallest in SiMOS, relevant for the tuning of quantum dot arrays. These results constitute an excellent base for quantum computation with quantum dots and provide opportunities for each platform to be integrated with standard semiconductor manufacturing.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Universal quantum logic in hot silicon qubits

Quantum computation requires many qubits that can be coherently controlled and coupled to each other. Qubits that are defined using lithographic techniques are often argued to be promising platforms for scalability, since they can be implemented using semiconductor fabrication technology. However, leading solid-state approaches function only at temperatures below 100 mK, where cooling power is extremely limited, and this severely impacts the perspective for practical quantum computation. Recent works on spins in silicon have shown steps towards a platform that can be operated at higher temperatures by demonstrating long spin lifetimes, gate-based spin readout, and coherent single-spin control, but the crucial two-qubit logic gate has been missing. Here we demonstrate that silicon quantum dots can have sufficient thermal robustness to enable the execution of a universal gate set above one Kelvin. We obtain single-qubit control via electron-spin-resonance (ESR) and readout using Pauli spin blockade. We show individual coherent control of two qubits and measure single-qubit fidelities up to 99.3 %. We demonstrate tunability of the exchange interaction between the two spins from 0.5 up to 18 MHz and use this to execute coherent two-qubit controlled rotations (CROT). The demonstration of `hot' and universal quantum logic in a semiconductor platform paves the way for quantum integrated circuits hosting the quantum hardware and their control circuitry all on the same chip, providing a scalable approach towards practical quantum information.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Complex magnetism of lanthanide intermetallics unravelled

We explain a profound complexity of magnetic interactions of some technologically relevant gadolinium intermetallics using an ab-initio electronic structure theory which includes disordered local moments and strong $f$-electron correlations. The theory correctly finds GdZn and GdCd to be simple ferromagnets and predicts a remarkably large increase of Curie temperature with pressure of +1.5 K kbar$^{-1}$ for GdCd confirmed by our experimental measurements of +1.6 K kbar$^{-1}$. Moreover we find the origin of a ferromagnetic-antiferromagnetic competition in GdMg manifested by non-collinear, canted magnetic order at low temperatures. Replacing 35\% of the Mg atoms with Zn removes this transition in excellent agreement with longstanding experimental data.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Rare Earth Monopnictides and Monochalcogenides from First Principles: Towards an Electronic Phase Diagram of Strongly Correlated Materials

We present results of an ab-initio study of the electronic structure of 140 rare earth compounds. Specifically we predict an electronic phase diagram of the entire range of rare earth monopnictides and monochalcogenides, composed of metallic, semiconducting and heavy fermion-like regions, and exhibiting valency transitions brought about by a complex interplay between ligand chemistry and lanthanide contraction. The calculations exploit the combined effect of a first-principles methodology, which can adequately describe the dual character of electrons, itinerant vs. localized, and high throughput computing made possible by the increasing available computational power. Our findings, including the predicted "intermediate valent" compounds SmO and TmSe, are in overall excellent agreement with the available experimental data. The accuracy of the approach, proven e.g. through the lattice parameters calculated to within 1.5% of the experimental values, and its ability to describe localization phenomena in solids, makes it a competitive atomistic simulation approach in the search for and design of new materials with specific physical properties and possible technological applications.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Electronic structure and ionicity of actinide oxides from first principles calculations

The ground state electronic structures of the actinide oxides AO, A2O3 and AO2 (A=U, Np, Pu, Am, Cm, Bk, Cf) are determined from first-principles calculations, using the self-interaction corrected local spin-density (SIC-LSD) approximation. Emphasis is put on the degree of f-electron localization, which for AO2 and A2O3 is found to follow the stoichiometry, namely corresponding to A(4+) ions in the dioxide and A(3+) ions in the sesquioxides. In contrast, the A(2+) ionic configuration is not favorable in the monoxides, which therefore become metallic. The energetics of the oxidation and reduction of the actinide dioxides is discussed, and it is found that the dioxide is the most stable oxide for the actinides from Np onwards. Our study reveals a strong link between preferred oxidation number and degree of localization which is confirmed by comparing to the ground state configurations of the corresponding lanthanide oxides. The ionic nature of the actinide oxides emerges from the fact that only those compounds will form where the calculated ground state valency agrees with the nominal valency expected from a simple charge counting.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

First Principles Electronic Structure of Mn doped GaAs, GaP, and GaN semiconductors

We present first-principles electronic structure calculations of Mn doped III-V semiconductors based on the local spin-density approximation (LSDA) as well as the self-interaction corrected local spin density method (SIC-LSD). We find that it is crucial to use a self-interaction free approach to properly describe the electronic ground state. The SIC-LSD calculations predict the proper electronic ground state configuration for Mn in GaAs, GaP, and GaN. Excellent quantitative agreement with experiment is found for magnetic moment and p-d exchange in (GaMn)As. These results allow us to validate commonly used models for magnetic semiconductors. Furthermore, we discuss the delicate problem of extracting binding energies of localized levels from density functional theory calculations. We propose three approaches to take into account final state effects to estimate the binding energies of the Mn-d levels in GaAs. We find good agreement between computed values and estimates from photoemisison experiments.

0 citations0 reviewsNo code linkedOpen access