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L. M. K. Vandersypen

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Published work

31 published item(s)

preprint2025arXiv

Running a six-qubit quantum circuit on a silicon spin qubit array

The simplicity of encoding a qubit in the state of a single electron spin and the potential for their integration into industry-standard microchips continue to drive the field of semiconductor-based quantum computing. However, after decades of progress, validating universal logic in these platforms has advanced little beyond first-principles demonstrations of meeting the DiVincenzo criteria. Case in point, and specifically for silicon-based quantum dots, three-qubit algorithms have been the upper limit to date, despite the availability of devices containing more qubits. In this work, we fully exploit the capacity of a spin-qubit array and implement a six qubit quantum circuit, the largest utilizing semiconductor quantum technology. By programming the quantum processor, we execute quantum circuits across all permutations of three, four, five, and six neighbouring qubits, demonstrating successful programmable multi-qubit operation throughout the array. The results reveal that, despite the high quality of individual units, errors quickly accumulate when combining all of them in a quantum circuit. This work highlights the necessity to minimize idling times through simultaneous operations, boost dephasing times, and consistently improve state preparation and measurement fidelities.

preprint2021arXiv

Qubits made by advanced semiconductor manufacturing

Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots. However, to date, their fabrication has relied on electron-beam lithography and, with few exceptions, on academic style lift-off processes. Although these fabrication techniques offer process flexibility, they suffer from low yield and poor uniformity. An important question is whether the processing conditions developed in the manufacturing fab environment to enable high yield, throughput, and uniformity of transistors are suitable for quantum dot arrays and do not compromise the delicate qubit properties. Here, we demonstrate quantum dots hosted at a 28Si/28SiO2 interface, fabricated in a 300 mm semiconductor manufacturing facility using all-optical lithography and fully industrial processing. As a result, we achieve nanoscale gate patterns with remarkable homogeneity. The quantum dots are well-behaved in the multi-electron regime, with excellent tunnel barrier control, a crucial feature for fault-tolerant two-qubit gates. Single-spin qubit operation using magnetic resonance reveals relaxation times of over 1 s at 1 Tesla and coherence times of over 3 ms, matching the quality of silicon spin qubits reported to date. The feasibility of high-quality qubits made with fully-industrial techniques strongly enhances the prospects of a large-scale quantum computer

preprint2020arXiv

Efficient orthogonal control of tunnel couplings in a quantum dot array

Electrostatically-defined semiconductor quantum dot arrays offer a promising platform for quantum computation and quantum simulation. However, crosstalk of gate voltages to dot potentials and inter-dot tunnel couplings complicates the tuning of the device parameters. To date, crosstalk to the dot potentials is routinely and efficiently compensated using so-called virtual gates, which are specific linear combinations of physical gate voltages. However, due to exponential dependence of tunnel couplings on gate voltages, crosstalk to the tunnel barriers is currently compensated through a slow iterative process. In this work, we show that the crosstalk on tunnel barriers can be efficiently characterized and compensated for, using the fact that the same exponential dependence applies to all gates. We demonstrate efficient calibration of crosstalk in a quadruple quantum dot array and define a set of virtual barrier gates, with which we show orthogonal control of all inter-dot tunnel couplings. Our method marks a key step forward in the scalability of the tuning process of large-scale quantum dot arrays.

preprint2020arXiv

Electron cascade for spin readout

Electrons confined in semiconductor quantum dot arrays have both charge and spin degrees of freedom. The spin provides a well-controllable and long-lived qubit implementation. The charge configuration in the dot array is influenced by Coulomb repulsion, and the same interaction enables charge sensors to probe this configuration. Here we show that the Coulomb repulsion allows an initial charge transition to induce subsequent charge transitions, inducing a cascade of electron hops, like toppling dominoes. A cascade can transmit information along a quantum dot array over a distance that extends by far the effect of the direct Coulomb repulsion. We demonstrate that a cascade of electrons can be combined with Pauli spin blockade to read out spins using a remote charge sensor. We achieve > 99.9% spin readout fidelity in 1.7 $\mathrmμ$s. The cascade-based readout enables operation of a densely-packed two-dimensional quantum dot array with charge sensors placed at the periphery. The high connectivity of such arrays greatly improves the capabilities of quantum dot systems for quantum computation and simulation.

preprint2020arXiv

High-fidelity two-qubit gates in silicon above one Kelvin

Spin qubits in quantum dots define an attractive platform for scalable quantum information because of their compatibility with semiconductor manufacturing, their long coherence times, and the ability to operate at temperatures exceeding one Kelvin. Qubit logic can be implemented by pulsing the exchange interaction or via driven rotations. Here, we show that these approaches can be combined to execute a multitude of native two-qubit gates in a single device, reducing the operation overhead to perform quantum algorithms. We demonstrate, at a temperature above one Kelvin, single-qubit rotations together with the two-qubit gates CROT, CPHASE and SWAP. Furthermore we realize adiabatic, diabatic and composite sequences to optimize the qubit control fidelity and the gate time. We find two-qubit gates that can be executed within 67 ns and by theoretically analyzing the experimental noise sources we predict fidelities exceeding 99%. This promises fault-tolerant operation using quantum hardware that can be embedded with classical electronics for quantum integrated circuits.

preprint2020arXiv

Tunable coupling and isolation of single electrons in silicon metal-oxide-semiconductor quantum dots

Extremely long coherence times, excellent single-qubit gate fidelities and two-qubit logic have been demonstrated with silicon metal-oxide-semiconductor spin qubits, making it one of the leading platforms for quantum information processing. Despite this, a long-standing challenge in this system has been the demonstration of tunable tunnel coupling between single electrons. Here we overcome this hurdle with gate-defined quantum dots and show couplings that can be tuned on and off for quantum operations. We use charge sensing to discriminate between the (2,0) and (1,1) charge states of a double quantum dot and show excellent charge sensitivity. We demonstrate tunable coupling up to 13 GHz, obtained by fitting charge polarization lines, and tunable tunnel rates down to below 1 Hz, deduced from the random telegraph signal. The demonstration of tunable coupling between single electrons in a silicon metal-oxide-semiconductor device provides significant scope for high-fidelity two-qubit logic toward quantum information processing with standard manufacturing.

preprint2019arXiv

Quantum Dot Arrays in Silicon and Germanium

Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become practical, large numbers of quantum dots will be required, necessitating the fabrication of scaled structures such as linear and 2D arrays. Group IV semiconductors contain stable isotopes with zero nuclear spin and can thereby serve as excellent host for spins with long quantum coherence. Here we demonstrate group IV quantum dot arrays in silicon metal-oxide-semiconductor (SiMOS), strained silicon (Si/SiGe) and strained germanium (Ge/SiGe). We fabricate using a multi-layer technique to achieve tightly confined quantum dots and compare integration processes. While SiMOS can benefit from a larger temperature budget and Ge/SiGe can make ohmic contact to metals, the overlapping gate structure to define the quantum dots can be based on a nearly identical integration. We realize charge sensing in each platform, for the first time in Ge/SiGe, and demonstrate fully functional linear and two-dimensional arrays where all quantum dots can be depleted to the last charge state. In Si/SiGe, we tune a quintuple quantum dot using the N+1 method to simultaneously reach the few electron regime for each quantum dot. We compare capacitive cross talk and find it to be the smallest in SiMOS, relevant for the tuning of quantum dot arrays. These results constitute an excellent base for quantum computation with quantum dots and provide opportunities for each platform to be integrated with standard semiconductor manufacturing.

preprint2019arXiv

Universal quantum logic in hot silicon qubits

Quantum computation requires many qubits that can be coherently controlled and coupled to each other. Qubits that are defined using lithographic techniques are often argued to be promising platforms for scalability, since they can be implemented using semiconductor fabrication technology. However, leading solid-state approaches function only at temperatures below 100 mK, where cooling power is extremely limited, and this severely impacts the perspective for practical quantum computation. Recent works on spins in silicon have shown steps towards a platform that can be operated at higher temperatures by demonstrating long spin lifetimes, gate-based spin readout, and coherent single-spin control, but the crucial two-qubit logic gate has been missing. Here we demonstrate that silicon quantum dots can have sufficient thermal robustness to enable the execution of a universal gate set above one Kelvin. We obtain single-qubit control via electron-spin-resonance (ESR) and readout using Pauli spin blockade. We show individual coherent control of two qubits and measure single-qubit fidelities up to 99.3 %. We demonstrate tunability of the exchange interaction between the two spins from 0.5 up to 18 MHz and use this to execute coherent two-qubit controlled rotations (CROT). The demonstration of `hot' and universal quantum logic in a semiconductor platform paves the way for quantum integrated circuits hosting the quantum hardware and their control circuitry all on the same chip, providing a scalable approach towards practical quantum information.

preprint2016arXiv

Coherent spin-exchange via a quantum mediator

Coherent interactions at a distance provide a powerful tool for quantum simulation and computation. The most common approach to realize an effective long-distance coupling 'on-chip' is to use a quantum mediator, as has been demonstrated for superconducting qubits and trapped ions. For quantum dot arrays, which combine a high degree of tunability with extremely long coherence times, the experimental demonstration of coherent spin-spin coupling via an intermediary system remains an important outstanding goal. Here, we use a linear triple-quantum-dot array to demonstrate a first working example of a coherent interaction between two distant spins via a quantum mediator. The two outer dots are occupied with a single electron spin each and the spins experience a superexchange interaction through the empty middle dot which acts as mediator. Using single-shot spin read-out we measure the coherent time evolution of the spin states on the outer dots and observe a characteristic dependence of the exchange frequency as a function of the detuning between the middle and outer dots. This approach may provide a new route for scaling up spin qubit circuits using quantum dots and aid in the simulation of materials and molecules with non-nearest neighbour couplings such as MnO, high-temperature superconductors and DNA. The same superexchange concept can also be applied in cold atom experiments.

preprint2016arXiv

Computer-automated tuning of semiconductor double quantum dots into the single-electron regime

We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate $T$ that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot devices.

preprint2016arXiv

Gate fidelity and coherence of an electron spin in a Si/SiGe quantum dot with micromagnet

The gate fidelity and the coherence time of a qubit are important benchmarks for quantum computation. We construct a qubit using a single electron spin in a Si/SiGe quantum dot and control it electrically via an artificial spin-orbit field from a micromagnet. We measure an average single-qubit gate fidelity of $\approx$ 99$\%$ using randomized benchmarking, which is consistent with dephasing from the slowly evolving nuclear spins in substrate. The coherence time measured using dynamical decoupling extends up to $\approx$ 400 $μ$s for 128 decoupling pulses, with no sign of saturation. We find evidence that the coherence time is limited by noise in the 10 kHz $-$ 1 MHz range, possibly because charge noise affecting the spin via the micromagnet gradient. This work shows that an electron spin in a Si/SiGe quantum dot is a good candidate for quantum information processing as well as for a quantum memory, even without isotopic purification.

preprint2016arXiv

Nanosecond-timescale spin transfer using individual electrons in a quadruple-quantum-dot device

The ability to coherently transport electron-spin states between different sites of gate-defined semiconductor quantum dots is an essential ingredient for a quantum-dot-based quantum computer. Previous shuttles using electrostatic gating were too slow to move an electron within the spin dephasing time across an array. Here we report a nanosecond-timescale spin transfer of individual electrons across a quadruple-quantum-dot device. Utilizing enhanced relaxation rates at a so-called `hot spot', we can upper bound the shuttle time to at most 150 ns. While actual shuttle times are likely shorter, 150 ns is already fast enough to preserve spin coherence in e.g. silicon based quantum dots. This work therefore realizes an important prerequisite for coherent spin transfer in quantum dot arrays.

preprint2015arXiv

High Kinetic Inductance Superconducting Nanowire Resonators for Circuit QED in a Magnetic Field

We present superconducting microwave-frequency resonators based on NbTiN nanowires. The small cross section of the nanowires minimizes vortex generation, making the resonators resilient to magnetic fields. Measured intrinsic quality factors exceed $2\times 10^5$ in a $6$ T in-plane magnetic field, and $3\times 10^4$ in a $350$ mT perpendicular magnetic field. Due to their high characteristic impedance, these resonators are expected to develop zero-point voltage fluctuations one order of magnitude larger than in standard coplanar waveguide resonators. These properties make the nanowire resonators well suited for circuit QED experiments needing strong coupling to quantum systems with small electric dipole moments and requiring a magnetic field, such as electrons in single and double quantum dots.

preprint2014arXiv

Ballistic transport in graphene grown by chemical vapor deposition

In this letter we report the observation of ballistic transport on micron length scales in graphene synthesised by chemical vapour deposition (CVD). Transport measurements were done on Hall bar geometries in a liquid He cryostat. Using non-local measurements we show that electrons can be ballistically directed by a magnetic field (transverse magnetic focussing) over length scales of ~μm. Comparison with atomic force microscope measurements suggests a correlation between the absence of wrinkles and the presence of ballistic transport in CVD graphene.

preprint2014arXiv

Dynamics of spin-flip photon-assisted tunneling

We present time-resolved measurements of spin-flip photon-assisted tunneling and spin-flip relaxation in a doubly occupied double quantum dot. The photon-assisted excitation rate as a function of magnetic field indicates that spin-orbit coupling is the dominant mechanism behind the spin-flip under the present conditions. We are able to extract the resulting effective `spin-flip tunneling' energy, which is found to be three orders of magnitude smaller than the regular spin-conserving tunneling energy. We also measure the relaxation and dephasing times of a qubit formed out of two two-electron states with different spin and charge configurations.

preprint2014arXiv

Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot

Nanofabricated quantum bits permit large-scale integration but usually suffer from short coherence times due to interactions with their solid-state environment. The outstanding challenge is to engineer the environment so that it minimally affects the qubit, but still allows qubit control and scalability. Here we demonstrate a long-lived single-electron spin qubit in a Si/SiGe quantum dot with all-electrical two-axis control. The spin is driven by resonant microwave electric fields in a transverse magnetic field gradient from a local micromagnet, and the spin state is read out in single-shot mode. Electron spin resonance occurs at two closely spaced frequencies, which we attribute to two valley states. Thanks to the weak hyperfine coupling in silicon, Ramsey and Hahn echo decay timescales of 1us and 40us, respectively, are observed. This is almost two orders of magnitude longer than the intrinsic timescales in III-V quantum dots, while gate operation times are comparable to those achieved in GaAs. This places the single-qubit rotations in the fault-tolerant regime and strongly raises the prospects of quantum information processing based on quantum dots.

preprint2014arXiv

Spin relaxation anisotropy in a GaAs quantum dot

We report that the electron spin relaxation time, T1, in a GaAs quantum dot with a spin-1/2 ground state has a 180 degree periodicity in the orientation of the in-plane magnetic field. This periodicity has been predicted for circular dots as due to the interplay of Rashba and Dresselhaus spin orbit contributions. Different from this prediction, we find that the extrema in the T1 do not occur when the magnetic field is along the [110] and [1-10] crystallographic directions. This deviation is attributed to an elliptical dot confining potential. The T1 varies by more than an order of magnitude when rotating a 3 Tesla field, reaching about 80 ms for the magic angle. We infer from the data that in our device the sign of the Rashba and Dresselhaus constants are opposite.

preprint2013arXiv

Excitation of a Si/SiGe quantum dot using an on-chip microwave antenna

We report transport measurements on a Si/SiGe quantum dot subject to microwave excitation via an on-chip antenna. The response shows signatures of photon-assisted tunneling and only a small effect on charge stability. We also explore the use of a d.c. current applied to the antenna for generating tunable, local magnetic field gradients and put bounds on the achievable field gradients, limited by heating of the reservoirs.

preprint2013arXiv

Resolving Spin-Orbit and Hyperfine Mediated Electric Dipole Spin Resonance in a Quantum Dot

We investigate the electric manipulation of a single electron spin in a single gate-defined quantum dot. We observe that so-far neglected differences between the hyperfine and spin-orbit mediated electric dipole spin resonance conditions have important consequences at high magnetic fields. In experiments using adiabatic rapid passage to invert the electron spin, we observe an unusually wide and asymmetric response as a function of magnetic field. Simulations support the interpretation of the lineshape in terms of four different resonance conditions. These findings may lead to isotope-selective control of dynamic nuclear polarization in quantum dots.

preprint2013arXiv

Simultaneous Spin-Charge Relaxation in Double Quantum Dots

We investigate phonon-induced spin and charge relaxation mediated by spin-orbit and hyperfine interactions for a single electron confined within a double quantum dot. A simple toy model incorporating both direct decay to the ground state of the double dot and indirect decay via an intermediate excited state yields an electron spin relaxation rate that varies non-monotonically with the detuning between the dots. We confirm this model with experiments performed on a GaAs double dot, demonstrating that the relaxation rate exhibits the expected detuning dependence and can be electrically tuned over several orders of magnitude. Our analysis suggests that spin-orbit mediated relaxation via phonons serves as the dominant mechanism through which the double-dot electron spin-flip rate varies with detuning.

preprint2012arXiv

Formation and control of wrinkles in graphene by the wedging transfer method

We study the formation of wrinkles in graphene upon wet transfer onto a target substrate, whereby draining of water appears to play an important role. We are able to control the orientation of the wrinkles by tuning the surface morphology. Wrinkles are absent in flakes transferred to strongly hydrophobic substrates, a further indication of the role of the interaction of water with the substrate in wrinkle formation. The electrical and structural integrity of the graphene is not affected by the wrinkles, as inferred from Raman measurements and electrical conductivity measurements.

preprint2011arXiv

Efficient C-Phase gate for single-spin qubits in quantum dots

Two-qubit interactions are at the heart of quantum information processing. For single-spin qubits in semiconductor quantum dots, the exchange gate has always been considered the natural two-qubit gate. The recent integration of magnetic field or g-factor gradients in coupled quantum dot systems allows for a one-step, robust realization of the controlled phase (C-Phase) gate instead. We analyze the C-Phase gate durations and fidelities that can be obtained under realistic conditions, including the effects of charge and nuclear field fluctuations, and find gate error probabilities of below 10-4, possibly allowing fault-tolerant quantum computation.

preprint2011arXiv

Generating Entanglement and Squeezed States of Nuclear Spins in Quantum Dots

Entanglement generation and detection are two of the most sought-after goals in the field of quantum control. Besides offering a means to probe some of the most peculiar and fundamental aspects of quantum mechanics, entanglement in many-body systems can be used as a tool to reduce fluctuations below the standard quantum limit. For spins, or spin-like systems, such a reduction of fluctuations can be realized with so-called squeezed states. Here we present a scheme for achieving coherent spin squeezing of nuclear spin states in few-electron quantum dots. This work represents a major shift from earlier studies in quantum dots, which have explored classical "narrowing" of the nuclear polarization distribution through feedback involving stochastic spin flips. In contrast, we use the nuclear-polarization-dependence of the electron spin resonance (ESR) to provide a non-linearity which generates a non-trivial, area-preserving, "twisting" dynamics that squeezes and stretches the nuclear spin Wigner distribution without the need for nuclear spin flips.

preprint2011arXiv

Mechanical cleaning of graphene

Contamination of graphene due to residues from nanofabrication often introduces background doping and reduces charge carrier mobility. For samples of high electronic quality, post-lithography cleaning treatments are therefore needed. We report that mechanical cleaning based on contact mode AFM removes residues and significantly improves the electronic properties. A mechanically cleaned dual-gated bilayer graphene transistor with hBN dielectrics exhibited a mobility of ~36,000 cm2/Vs at low temperature.

preprint2011arXiv

Nuclear Spin Dynamics in Double Quantum Dots: Fixed Points, Transients, and Intermittency

Transport through spin-blockaded quantum dots provides a means for electrical control and detection of nuclear spin dynamics in the host material. Although such experiments have become increasingly popular in recent years, interpretation of their results in terms of the underlying nuclear spin dynamics remains challenging. Here we point out a fundamental process in which nuclear spin dynamics can be driven by electron shot noise; fast electric current fluctuations generate much slower nuclear polarization dynamics, which in turn affect electron dynamics via the Overhauser field. The resulting extremely slow intermittent current fluctuations account for a variety of observed phenomena that were not previously understood.

preprint2011arXiv

Single-shot measurement of triplet-singlet relaxation in a Si/SiGe double quantum dot

We investigate the lifetime of two-electron spin states in a few-electron Si/SiGe double dot. At the transition between the (1,1) and (0,2) charge occupations, Pauli spin blockade provides a readout mechanism for the spin state. We use the statistics of repeated single-shot measurements to extract the lifetimes of multiple states simultaneously. At zero magnetic field, we find that all three triplet states have equal lifetimes, as expected, and this time is ~10 ms. At non-zero field, the T0 lifetime is unchanged, whereas the T- lifetime increases monotonically with field, reaching 3 seconds at 1 T.

preprint2010arXiv

Coupling molecular spin states by photon-assisted tunneling

Artificial molecules containing just one or two electrons provide a powerful platform for studies of orbital and spin quantum dynamics in nanoscale devices. A well-known example of these dynamics is tunneling of electrons between two coupled quantum dots triggered by microwave irradiation. So far, these tunneling processes have been treated as electric dipole-allowed spin-conserving events. Here we report that microwaves can also excite tunneling transitions between states with different spin. In this work, the dominant mechanism responsible for violation of spin conservation is the spin-orbit interaction. These transitions make it possible to perform detailed microwave spectroscopy of the molecular spin states of an artificial hydrogen molecule and open up the possibility of realizing full quantum control of a two spin system via microwave excitation.

preprint2009arXiv

Locking electron spins into magnetic resonance by electron-nuclear feedback

The main obstacle to coherent control of two-level quantum systems is their coupling to an uncontrolled environment. For electron spins in III-V quantum dots, the random environment is mostly given by the nuclear spins in the quantum dot host material; they collectively act on the electron spin through the hyperfine interaction, much like a random magnetic field. Here we show that the same hyperfine interaction can be harnessed such that partial control of the normally uncontrolled environment becomes possible. In particular, we observe that the electron spin resonance frequency remains locked to the frequency of an applied microwave magnetic field, even when the external magnetic field or the excitation frequency are changed. The nuclear field thereby adjusts itself such that the electron spin resonance condition remains satisfied. General theoretical arguments indicate that this spin resonance locking is accompanied by a significant reduction of the randomness in the nuclear field.

preprint2009arXiv

Multiple Nuclear Polarization States in a Double Quantum Dot

We observe multiple stable states of nuclear polarization in a double quantum dot under conditions of electron spin resonance. The stable states can be understood within an elaborated theoretical rate equation model for the polarization in each of the dots, in the limit of strong driving. This model also captures unusual features of the data, such as fast switching and a `wrong' sign of polarization. The results reported enable applications of this polarization effect, including manipulation and control of nuclear fields.

preprint2007arXiv

Spins in few-electron quantum dots

This review describes the physics of spins in quantum dots containing one or two electrons, from an experimentalist's viewpoint. Various methods for extracting spin properties from experiment are presented, restricted exclusively to electrical measurements. Furthermore, experimental techniques are discussed that allow for: (1) the rotation of an electron spin into a superposition of up and down, (2) the measurement of the quantum state of an individual spin and (3) the control of the interaction between two neighbouring spins by the Heisenberg exchange interaction. Finally, the physics of the relevant relaxation and dephasing mechanisms is reviewed and experimental results are compared with theories for spin-orbit and hyperfine interactions. All these subjects are directly relevant for the fields of quantum information processing and spintronics with single spins (i.e. single-spintronics).

preprint2006arXiv

High fidelity measurement of singlet-triplet states in a quantum dot

We demonstrate experimentally a read-out method that distinguishes between two-electron spin states in a quantum dot. This scheme combines the advantages of the two existing mechanisms for spin-to-charge conversion with single-shot charge detection: a large difference in energy between the two states and a large difference in tunnel rate between the states and a reservoir. As a result, a spin measurement fidelity of 97% was achieved, which is much higher than previously reported fidelities.