Researcher profile

L. Patlagan

L. Patlagan contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 15 - Baseline
3works
0followers
2topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2014arXiv

Metal-insulator transition upon heating and negative-differential-resistive-switching induced by self-heating in BaCo0.9Ni0.1S1.8

The layered compound BaCo1-xNixS2-y (0.05<x<0.2 and 0.05<y<0.2) exhibits an unusual first-order structural and electronic phase transition from a low-T monoclinic paramagnetic metal to a high-T tetragonal antiferromagnetic insulator around 200 K with huge hysteresis (~ 40 K) and large volume change (~0.01). Here we report on unusual voltage-controlled resistive switching followed by current-controlled resistive switching induced by self-heating in polycrystalline BaCo1-xNixS2-y (nominal x=0.1 and y=0.2). These were due to the steep metal to insulator transition upon heating followed by the activated behavior of the resistivity above the transition. The major role of Joule heating in switching is supported by the absence of nonlinearity in the current as function of voltage, I(V), obtained in pulsed measurements, in the range of electric fields relevant to d.c. measurements. The voltage-controlled negative differential resistance around the threshold for switching was explained by a simple model of self-heating. The main difficulty in modeling I(V) from the samples resistance as function of temperature R(T) was the progressive increase of R(T), and to a lesser extend the decrease of the resistance jumps at the transitions, caused by the damage induced by cycling through the transitions by heating or self-heating. This was dealt with by following systematically R(T) over many cycles and by using the data of R(T) in the heating cycle closest to that of the self-heating one.

preprint2013arXiv

Inter-grain tunneling in the half-metallic double-perovskites Sr$_2$BB&#39;O$_6$ (BB&#39;-- FeMo, FeRe, CrMo, CrW, CrRe

The zero-field conductivities ($σ$) of the polycrystaline title materials, are governed by inter-grain transport. In the majority of cases their $σ$(T) can be described by the &#34;fluctuation induced tunneling&#34; model. Analysis of the results in terms of this model reveals two remarkable features: 1. For \emph{all} Sr$_2$FeMoO$_6$ samples of various microstructures, the tunneling constant (barrier width $\times$ inverse decay-length of the wave-function) is $\sim$ 2, indicating the existence of an intrinsic insulating boundary layer with a well defined electronic (and magnetic) structure. 2. The tunneling constant for \emph{all} cold-pressed samples decreases linearly with increasing magnetic-moment/formula-unit.

preprint2010arXiv

Absence of charge-density-wave sliding in epitaxial charge-ordered Pr0.48Ca0.52MnO3 films

For an epitaxial Pr0.48Ca0.52MnO3 film on NdGaO3, we use transmission electron microscopy to observe a &#34;charge-ordered&#34; superlattice along the in-plane direction a. The same film shows no electrical signatures of charge order. The in-plane electrical anisotropy (rho)a/(rho)c = 28 is constant, and there is no evidence of sliding charge density waves up to the large field of ~10^3 V/cm.