Source author record

L. Ortega

L. Ortega appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

3works
3topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2026arXiv

Sliding Charge Density Wave observed through Band Structure

An incommensurate CDW may have the ability to slide, i.e., to generate an excess of current when the system is submitted to an external field. Sliding phenomenon is closely related to deformation of the periodic lattice distortion associated to the CDW. In principle, however, the sliding state can also be observed through the band structure. Here we show that broken symmetry in k-space is observed by Angle-Resolved Photoemission Spectroscopy (ARPES) in the sliding regime of TbTe$_3$, which could be consistent with theoretical predictions.

preprint2011arXiv

Epitaxial refractory-metal buer layers with a chemical gradient for adjustable lattice parameter and controlled chemical interface

We have developed and characterized the structure and composition of nanometers-thick solid-solution epitaxial layers of (V,Nb) on sapphire (1120), displaying a continuous lateral gradient of composition from one to another pure element. Further covered with an ultrathin pseudomorphic layer of W, these provide a template for the fast combinatorial investigation of any growth or physical property depending of strain.

preprint2009arXiv

Low temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers

We report on a detailed analysis of the superconducting properties of boron-doped silicon films grown along the 001 direction by Gas Immersion Laser Doping. The doping concentration cB has been varied up to approx. 10 at.% by increasing the number of laser shots to 500. No superconductivity could be observed down to 40mK for doping level below 2.5 at.%. The critical temperature Tc then increased steeply to reach 0.6K for cB = 8 at%. No hysteresis was found for the transitions in magnetic field, which is characteristic of a type II superconductor. The corresponding upper critical field Hc2(0) was on the order of 1000 G, much smaller than the value previously reported by Bustarret et al. in Nature (London) 444, 465 (2006).