BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

A. Tejeda

A. Tejeda appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

Catalog footprint

What is connected

11works
3topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

11 published item(s)

preprint2026arXiv

Sliding Charge Density Wave observed through Band Structure

An incommensurate CDW may have the ability to slide, i.e., to generate an excess of current when the system is submitted to an external field. Sliding phenomenon is closely related to deformation of the periodic lattice distortion associated to the CDW. In principle, however, the sliding state can also be observed through the band structure. Here we show that broken symmetry in k-space is observed by Angle-Resolved Photoemission Spectroscopy (ARPES) in the sliding regime of TbTe$_3$, which could be consistent with theoretical predictions.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

CDW signatures in the electronic structure of LaSb2 at 13 K and metal-insulator transition

Light rare-earth antimonide LaSb2 is a material susceptible to nesting and exhibits a Charge Density Wave (CDW) at 355 K as well as superconductivity below 1.2 K. In the seek for additional CDW transitions, we have studied the temperature-dependent of LaSb2 at 200 and 13 K and infer CDW manifestations by combining angle-resolved photoemission spectroscopy (ARPES) measurements and density functional theory (DFT) calculations. ARPES measurements at 200 K show a metallic system while it appears to be semiconducting at 13 K, at odds with existing resistivity measurements. At 13 K, ARPES shows the band folding of the inner Fermi surface pockets, with considerable spectral weight on the folded band. We find a nesting vector at q = 0.25$\pm$0.02 Å -1. In addition, we observe Umklapps of other bands due to the onset of the new periodicity, together with a semiconducting behavior in the whole reciprocal space. Calculations demonstrate that the folded band is associated with the La-Sb layer and that in-plane distortion is the most probable structural modification in the system, probably affecting the whole unit cell.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Semiconducting graphene from highly ordered substrate interactions

While numerous methods have been proposed to produce semiconducting graphene, a significant bandgap has never been demonstrated. The reason is that, regardless of the theoretical gap formation mechanism, disorder at the sub-nanometer scale prevents the required chiral symmetry breaking necessary to open a bandgap in graphene. In this work, we show for the first time that a 2D semiconducting graphene film can be made by epitaxial growth. Using improved growth methods, we show by direct band measurements that a bandgap greater than 0.5 eV can be produced in the first graphene layer grown on the SiC(0001) surface. This work demonstrates that order, a property that remains lacking in other graphene systems, is key to producing electronically viable semiconducting graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

A wide band gap metal-semiconductor-metal nanostructure made entirely from graphene

A blueprint for producing scalable digital graphene electronics has remained elusive. Current methods to produce semiconducting-metallic graphene networks all suffer from either stringent lithographic demands that prevent reproducibility, process-induced disorder in the graphene, or scalability issues. Using angle resolved photoemission, we have discovered a unique one dimensional metallic-semiconducting-metallic junction made entirely from graphene, and produced without chemical functionalization or finite size patterning. The junction is produced by taking advantage of the inherent, atomically ordered, substrate-graphene interaction when it is grown on SiC, in this case when graphene is forced to grow over patterned SiC steps. This scalable bottomup approach allows us to produce a semiconducting graphene strip whose width is precisely defined within a few graphene lattice constants, a level of precision entirely outside modern lithographic limits. The architecture demonstrated in this work is so robust that variations in the average electronic band structure of thousands of these patterned ribbons have little variation over length scales tens of microns long. The semiconducting graphene has a topologically defined few nanometer wide region with an energy gap greater than 0.5 eV in an otherwise continuous metallic graphene sheet. This work demonstrates how the graphene-substrate interaction can be used as a powerful tool to scalably modify graphene's electronic structure and opens a new direction in graphene electronics research.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

High Van Hove singularity extension and Fermi velocity increase in epitaxial graphene functionalized by gold clusters intercalation

Gold intercalation between the buffer layer and a graphene monolayer of epitaxial graphene on SiC(0001) leads to the formation of quasi free standing small aggregates of clusters. Angle Resolved Photoemission Spectroscopy measurements reveal that these clusters preserve the linear dispersion of the graphene quasiparticles and surprisingly increase their Fermi velocity. They also strongly modify the band structure of graphene around the Van Hove singularities (VHs) by a strong extension without charge transfer. This result gives a new insight on the role of the intercalant in the renormalization of the bare electronic band structure of graphene usually observed in Graphite and Graphene Intercalation Compounds.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Silicon intercalation into the graphene-SiC interface

In this work we use LEEM, XPEEM and XPS to study how the excess Si at the graphene-vacuum interface reorders itself at high temperatures. We show that silicon deposited at room temperature onto multilayer graphene films grown on the SiC(000[`1]) rapidly diffuses to the graphene-SiC interface when heated to temperatures above 1020. In a sequence of depositions, we have been able to intercalate ~ 6 ML of Si into the graphene-SiC interface.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Experimental study of the incoherent spectral weight in the photoemission spectra of the misfit cobaltate [Bi2Ba2O4][CoO2]2

Previous ARPES experiments in NaxCoO2 reported both a strongly renormalized bandwidth near the Fermi level and moderately renormalized Fermi velocities, leaving it unclear whether the correlations are weak or strong and how they could be quantified. We explain why this situation occurs and solve the problem by extracting clearly the coherent and incoherent parts of the band crossing the Fermi level. We show that one can use their relative weight to estimate self-consistently the quasiparticle weight Z, which turns out to be very small Z=0.15 +/- 0.05. We suggest this method could be a reliable way to study the evolution of correlations in cobaltates and for comparison with other strongly correlated systems.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

New electronic orderings observed in cobaltates under the influence of misfit periodicities

We study with ARPES the electronic structure of CoO2 slabs, stacked with rock-salt (RS) layers exhibiting a different (misfit) periodicity. Fermi Surfaces (FS) in phases with different doping and/or periodicities reveal the influence of the RS potential on the electronic structure. We show that these RS potentials are well ordered, even in incommensurate phases, where STM images reveal broad stripes with width as large as 80Å. The anomalous evolution of the FS area at low dopings is consistent with the localization of a fraction of the electrons. We propose that this is a new form of electronic ordering, induced by the potential of the stacked layers (RS or Na in NaxCoO2) when the FS becomes smaller than the Brillouin Zone of the stacked structure.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Structure and electronic properties of epitaxial graphene grown on SiC

We review progress in developing epitaxial graphene as a material for carbon electronics. In particular, improvements in epitaxial graphene growth, interface control and the understanding of multilayer epitaxial graphene's electronic properties are discussed. Although graphene grown on both polar faces of SiC is addressed, our discussions will focus on graphene grown on the (000-1) C-face of SiC. The unique properties of C-face multilayer epitaxial graphene have become apparent. These films behave electronically like a stack of nearly independent graphene sheets rather than a thin Bernal-stacked graphite sample. The origin of multilayer graphene's electronic behavior is its unique highly-ordered stacking of non-Bernal rotated graphene planes. While these rotations do not significantly affect the inter-layer interactions, they do break the stacking symmetry of graphite. It is this broken symmetry that causes each sheet to behave like an isolated graphene plane.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Symmetry breaking in commensurate graphene rotational stacking; a comparison of theory and experiment

Graphene stacked in a Bernal configuration (60 degrees relative rotations between sheets) differs electronically from isolated graphene due to the broken symmetry introduced by interlayer bonds forming between only one of the two graphene unit cell atoms. A variety of experiments have shown that non-Bernal rotations restore this broken symmetry; consequently, these stacking varieties have been the subject of intensive theoretical interest. Most theories predict substantial changes in the band structure ranging from the development of a Van Hove singularity and an angle dependent electron localization that causes the Fermi velocity to go to zero as the relative rotation angle between sheets goes to zero. In this work we show by direct measurement that non-Bernal rotations preserve the graphene symmetry with only a small perturbation due to weak effective interlayer coupling. We detect neither a Van Hove singularity nor any significant change in the Fermi velocity. These results suggest significant problems in our current theoretical understanding of the origins of the band structure of this material.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

First direct observation of a nearly ideal graphene band structure

Angle-resolved photoemission and X-ray diffraction experiments show that multilayer epitaxial graphene grown on the SiC(000-1) surface is a new form of carbon that is composed of effectively isolated graphene sheets. The unique rotational stacking of these films cause adjacent graphene layers to electronically decouple leading to a set of nearly independent linearly dispersing bands (Dirac cones) at the graphene K-point. Each cone corresponds to an individual macro-scale graphene sheet in a multilayer stack where AB-stacked sheets can be considered as low density faults.

0 citations0 reviewsNo code linkedOpen access