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L. N. Maurer

L. N. Maurer contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.dis-nn cond-mat.mtrl-sci cond-mat.other

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preprint2016arXiv

Phonon Monte Carlo: Generating Random Variates for Thermal Transport Simulation

Phonon Monte Carlo (PMC) is a versatile stochasic technique for solving the Boltzmann transport equation for phonons. It is particularly well suited for analyzing thermal transport in structures that have real-space roughness or are too large to simulate directly using atomistic techniques. PMC hinges on the generation and use of \textit{random variates} -- specific values of the random variables that correspond to physical observables -- in a way that accurately and efficiently captures the appropriate distribution functions. We present the relative merits of the inversion and rejection techniques for generating random variates on several examples relevant in thermal transport: drawing phonons from a thermal distribution and with full or isotropic dispersion, randomizing outgoing momentum upon diffuse boundary scattering, implementing contacts (boundary and internal), and conserving energy in the simulation. We also identify common themes in phonon generation and scattering that are helpful for reusing code in the simulation (generating thermal-phonon attributes vs internal contacts; diffuse surface scattering vs boundary contacts). We hope these examples will inform the reader about the mechanics of random-variate generation and how to choose a good approach for whatever problem is at hand, and aid in the more widespread use of PMC for thermal transport simulation.

preprint2016arXiv

Rayleigh waves, surface disorder, and phonon localization in nanostructures

We introduce a technique to calculate thermal conductivity in disordered nanostructures: a finite-difference time-domain (FDTD) solution of the elastic wave equation combined with the Green-Kubo formula. The technique captures phonon wave behavior and scales well to nanostructures that are too large or too surface disordered to simulate with many other techniques. We investigate the role of Rayleigh waves and surface disorder on thermal transport by studying graphenelike nanoribbons with free edges (allowing Rayleigh waves) and fixed edges (prohibiting Rayleigh waves). We find that free edges result in a significantly lower thermal conductivity than fixed ones. Free edges both introduce Rayleigh waves and cause all low-frequency modes (bulk and surface) to become more localized. Increasing surface disorder on free edges draws energy away from the center of the ribbon and toward the disordered edges, where it gets trapped in localized surface modes. These effects are not seen in ribbons with fixed boundary conditions and illustrate the importance of phonon surface modes in nanostructures.

preprint2015arXiv

Universal features of phonon transport in nanowires with correlated surface roughness

The ultralow thermal conductivity $κ$ observed experimentally in intentionally roughened silicon nanowires (SiNWs) is reproduced in phonon Monte Carlo simulations with exponentially correlated real-space rough surfaces similar to measurement [J. Lim, K. Hippalgaonkar, S. C. Andrews, A. Majumdar, and P. Yang, Nano Lett. 12, 2475 (2012)]. Universal features of thermal transport are revealed by presenting $κ$ as a function of the normalized geometric mean free path $\barλ$ ($0<\barλ<1$); the diffusive (Casimir) limit corresponds to $\barλ=1/2$. $κ$ vs $\barλ$ is exponential at low-to-moderate roughness (high $\barλ$), where internal scattering randomly interrupts phonon bouncing across the SiNW, and linear at high roughness (low $\barλ$), where multiple scattering events at the same surface results in ultralow, amorphous-limit thermal conductivity.

preprint2014arXiv

Ultrathin GaN Nanowires: Electronic, Thermal, and Thermoelectric Properties

We present a comprehensive computational study of the electronic, thermal, and thermoelectric (TE) properties of gallium nitride nanowires (NWs) over a wide range of thicknesses (3--9 nm), doping densities ($10^{18}$--$10^{20}$ cm$^{-3}$), and temperatures (300--1000 K). We calculate the low-field electron mobility based on ensemble Monte Carlo transport simulation coupled with a self-consistent solution of the Poisson and Schrödinger equations. We use the relaxation-time approximation and a Poisson-Schrodinger solver to calculate the electron Seebeck coefficient and thermal conductivity. Lattice thermal conductivity is calculated using a phonon ensemble Monte Carlo simulation, with a real-space rough surface described by a Gaussian autocorrelation function. Throughout the temperature range, the Seebeck coefficient increases while the lattice thermal conductivity decreases with decreasing wire cross section, both boding well for TE applications of thin GaN NWs. However, at room temperature these benefits are eventually overcome by the detrimental effect of surface roughness scattering on the electron mobility in very thin NWs. The highest room-temperature $ZT$ of 0.2 is achieved for 4-nm-thick NWs, while further downscaling degrades it. In contrast, at 1000 K, the electron mobility varies weakly with the NW thickness owing to the dominance of polar optical phonon scattering and multiple subbands contributing to transport, so $ZT$ increases with increasing confinement, reaching 0.8 for optimally doped 3-nm-thick NWs. The $ZT$ of GaN NWs increases with increasing temperature beyond 1000 K, which further emphasizes their suitability for high-temperature TE applications.