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Researcher profile

I. Knezevic

I. Knezevic contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.othercond-mat.dis-nnquant-ph

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Published work

14 published item(s)

preprint2016arXiv

Dielectric function and plasmons in graphene: A self-consistent-field calculation within a Markovian master equation formalism

We introduce a method for calculating the dielectric function of nanostructures with an arbitrary band dispersion and Bloch wave functions. The linear response of a dissipative electronic system to an external electromagnetic field is calculated by a self-consistent-field approach within a Markovian master equation formalism (SCF-MMEF) coupled with full-wave electromagnetic equations. The SCF-MMEF accurately accounts for several concurrent scattering mechanisms. The method captures interband electron-hole-pair generation, as well as the interband and intraband electron scattering with phonons and impurities. We employ the SCF-MMEF to calculate the dielectric function, complex conductivity, and loss function for supported graphene. From the loss-function maximum, we obtain plasmon dispersion and propagation length for different substrate types [nonpolar diamondlike carbon (DLC) and polar SiO$_2$ and hBN], impurity densities, carrier densities, and temperatures. Plasmons on the two polar substrates are suppressed below the highest surface phonon energy, while the spectrum is broad on the nonpolar DLC. Plasmon propagation lengths are comparable on polar and nonpolar substrates and are on the order of tens of nanometers, considerably shorter than previously reported. They improve with fewer impurities, at lower temperatures, and at higher carrier densities.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Nonequilibrium phonon effects in midinfrared quantum cascade lasers

We investigate the effects of nonequilibrium phonon dynamics on the operation of a GaAs-based midinfrared quantum cascade laser over a range of temperatures (77--300 K) via a coupled ensemble Monte Carlo simulation of electron and optical-phonon systems. Nonequilibrium phonon effects are shown to be important below 200 K. At low temperatures, nonequilibrium phonons enhance injection selectivity and efficiency by drastically increasing the rate of interstage electron scattering from the lowest injector state to the next-stage upper lasing level via optical-phonon absorption. As a result, the current density and modal gain at a given field are higher and the threshold current density lower and considerably closer to experiment than results obtained with thermal phonons. By amplifying phonon absorption, nonequilibrium phonons also hinder electron energy relaxation and lead to elevated electronic temperatures.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Partially coherent electron transport in terahertz quantum cascade lasers based on a Markovian master equation for the density matrix

We derive a Markovian master equation for the single-electron density matrix, applicable to quantum cascade lasers (QCLs). The equation conserves the positivity of the density matrix, includes off-diagonal elements (coherences) as well as in-plane dynamics, and accounts for electron scattering with phonons and impurities. We use the model to simulate a terahertz-frequency QCL, and compare the results with both experiment and simulation via nonequilibrium Green's functions (NEGF). We obtain very good agreement with both experiment and NEGF when the QCL is biased for optimal lasing. For the considered device, we show that the magnitude of coherences can be a significant fraction of the diagonal matrix elements, which demonstrates their importance when describing THz QCLs. We show that the in-plane energy distribution can deviate far from a heated Maxwellian distribution, which suggests that the assumption of thermalized subbands in simplified density-matrix models is inadequate. We also show that the current density and subband occupations relax towards their steady-state values on very different time scales.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Phonon Monte Carlo: Generating Random Variates for Thermal Transport Simulation

Phonon Monte Carlo (PMC) is a versatile stochasic technique for solving the Boltzmann transport equation for phonons. It is particularly well suited for analyzing thermal transport in structures that have real-space roughness or are too large to simulate directly using atomistic techniques. PMC hinges on the generation and use of \textit{random variates} -- specific values of the random variables that correspond to physical observables -- in a way that accurately and efficiently captures the appropriate distribution functions. We present the relative merits of the inversion and rejection techniques for generating random variates on several examples relevant in thermal transport: drawing phonons from a thermal distribution and with full or isotropic dispersion, randomizing outgoing momentum upon diffuse boundary scattering, implementing contacts (boundary and internal), and conserving energy in the simulation. We also identify common themes in phonon generation and scattering that are helpful for reusing code in the simulation (generating thermal-phonon attributes vs internal contacts; diffuse surface scattering vs boundary contacts). We hope these examples will inform the reader about the mechanics of random-variate generation and how to choose a good approach for whatever problem is at hand, and aid in the more widespread use of PMC for thermal transport simulation.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Rayleigh waves, surface disorder, and phonon localization in nanostructures

We introduce a technique to calculate thermal conductivity in disordered nanostructures: a finite-difference time-domain (FDTD) solution of the elastic wave equation combined with the Green-Kubo formula. The technique captures phonon wave behavior and scales well to nanostructures that are too large or too surface disordered to simulate with many other techniques. We investigate the role of Rayleigh waves and surface disorder on thermal transport by studying graphenelike nanoribbons with free edges (allowing Rayleigh waves) and fixed edges (prohibiting Rayleigh waves). We find that free edges result in a significantly lower thermal conductivity than fixed ones. Free edges both introduce Rayleigh waves and cause all low-frequency modes (bulk and surface) to become more localized. Increasing surface disorder on free edges draws energy away from the center of the ribbon and toward the disordered edges, where it gets trapped in localized surface modes. These effects are not seen in ribbons with fixed boundary conditions and illustrate the importance of phonon surface modes in nanostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Dissipative transport in superlattices within the Wigner function formalism

We employ the Wigner function formalism to simulate partially coherent, dissipative electron transport in biased semiconductor superlattices. We introduce a model collision integral with terms that describe energy dissipation, momentum relaxation, and the decay of spatial coherences (localization). Based on a particle-based solution to the Wigner transport equation with the model collision integral, we simulate quantum electronic transport at 10 K in a GaAs/AlGaAs superlattice and accurately reproduce its current density vs field characteristics obtained in experiment.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Thermal conductivity of III-V semiconductor superlattices

This paper presents a semiclassical model for the anisotropic thermal transport in III-V semiconductor superlattices (SLs). An effective interface rms roughness is the only adjustable parameter. Thermal transport inside a layer is described by the Boltzmann transport equation in the relaxation time approximation and is affected by the relevant scattering mechanisms (three-phonon, mass-difference, and dopant and electron scattering of phonons), as well as by diffuse scattering from the interfaces captured via an effective interface scattering rate. The in-plane thermal conductivity is obtained from the layer conductivities connected in parallel. The cross-plane thermal conductivity is calculated from the layer thermal conductivities in series with one another and with thermal boundary resistances (TBRs) associated with each interface; the TBRs dominate cross-plane transport. The TBR of each interface is calculated from the transmission coefficient obtained by interpolating between the acoustic mismatch model (AMM) and the diffuse mismatch model (DMM), where the weight of the AMM transmission coefficient is the same wavelength-dependent specularity parameter related to the effective interface rms roughness that is commonly used to describe diffuse interface scattering. The model is applied to multiple III-arsenide superlattices, and the results are in very good agreement with experimental findings. The method is both simple and accurate, easy to implement, and applicable to complicated SL systems, such as the active regions of quantum cascade lasers. It is also valid for other SL material systems with high-quality interfaces and predominantly incoherent phonon transport.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Universal features of phonon transport in nanowires with correlated surface roughness

The ultralow thermal conductivity $κ$ observed experimentally in intentionally roughened silicon nanowires (SiNWs) is reproduced in phonon Monte Carlo simulations with exponentially correlated real-space rough surfaces similar to measurement [J. Lim, K. Hippalgaonkar, S. C. Andrews, A. Majumdar, and P. Yang, Nano Lett. 12, 2475 (2012)]. Universal features of thermal transport are revealed by presenting $κ$ as a function of the normalized geometric mean free path $\barλ$ ($0<\barλ<1$); the diffusive (Casimir) limit corresponds to $\barλ=1/2$. $κ$ vs $\barλ$ is exponential at low-to-moderate roughness (high $\barλ$), where internal scattering randomly interrupts phonon bouncing across the SiNW, and linear at high roughness (low $\barλ$), where multiple scattering events at the same surface results in ultralow, amorphous-limit thermal conductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Clustered impurities and carrier transport in supported graphene

We investigate the effects of charged impurity distributions and carrier-carrier interactions on electronic transport in graphene on SiO$_2$ by employing a self-consistent coupled simulation of carrier transport and electrodynamics. We show that impurity clusters of characteristic width 40--50 nm generate electron--hole puddles of experimentally observed sizes. In the conductivity versus carrier density dependence, the residual conductivity and the linear-region slope are determined by the impurity distribution, and the measured slope can be used to estimate the impurity density in experiment. Furthermore, we show that the high-density sublinearity in the conductivity stems from carrier-carrier interactions.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

EMC/FDTD/MD simulation of carrier transport and electrodynamics in two-dimensional electron systems

We present the implementation and application of a multiphysics simulation technique to carrier dynamics under electromagnetic excitation in supported two-dimensional electronic systems. The technique combines ensemble Monte Carlo (EMC) for carrier transport with finite-difference time-domain (FDTD) for electrodynamics and molecular dynamics (MD) for short-range Coulomb interactions among particles. We demonstrate the use of this EMC/FDTD/MD technique by calculating the room-temperature dc and ac conductivity of graphene supported on SiO2.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Non-Markovian electron dynamics in nanostructures coupled to dissipative contacts

In quasiballistic semiconductor nanostructures, carrier exchange between the active region and dissipative contacts is the mechanism that governs relaxation. In this paper, we present a theoretical treatment of transient quantum transport in quasiballistic semiconductor nanostructures, which is based on the open system theory and valid on timescales much longer than the characteristic relaxation time in the contacts. The approach relies on a model interaction between the current-limiting active region and the contacts, given in the scattering-state basis. We derive a non-Markovian master equation for the irreversible evolution of the active region&#39;s many-body statistical operator by coarse-graining the exact dynamical map over the contact relaxation time. In order to obtain the response quantities of a nanostructure under bias, such as the potential and the charge and current densities, the non-Markovian master equation must be solved numerically together with the Schrödinger, Poisson, and continuity equations. We discuss how to numerically solve this coupled system of equations and illustrate the approach on the example of a silicon nin diode.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Time-dependent transport in open systems based on quantum master equations

Electrons in the active region of a nanostructure constitute an open many-body quantum system, interacting with contacts, phonons, and photons. We review the basic premises of the open system theory, focusing on the common approximations that lead to Markovian and non-Markovian master equations for the reduced statistical operator. We highlight recent progress on the use of master equations in quantum transport, and discuss the limitations and potential new directions of this approach.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Ultrathin GaN Nanowires: Electronic, Thermal, and Thermoelectric Properties

We present a comprehensive computational study of the electronic, thermal, and thermoelectric (TE) properties of gallium nitride nanowires (NWs) over a wide range of thicknesses (3--9 nm), doping densities ($10^{18}$--$10^{20}$ cm$^{-3}$), and temperatures (300--1000 K). We calculate the low-field electron mobility based on ensemble Monte Carlo transport simulation coupled with a self-consistent solution of the Poisson and Schrödinger equations. We use the relaxation-time approximation and a Poisson-Schrodinger solver to calculate the electron Seebeck coefficient and thermal conductivity. Lattice thermal conductivity is calculated using a phonon ensemble Monte Carlo simulation, with a real-space rough surface described by a Gaussian autocorrelation function. Throughout the temperature range, the Seebeck coefficient increases while the lattice thermal conductivity decreases with decreasing wire cross section, both boding well for TE applications of thin GaN NWs. However, at room temperature these benefits are eventually overcome by the detrimental effect of surface roughness scattering on the electron mobility in very thin NWs. The highest room-temperature $ZT$ of 0.2 is achieved for 4-nm-thick NWs, while further downscaling degrades it. In contrast, at 1000 K, the electron mobility varies weakly with the NW thickness owing to the dominance of polar optical phonon scattering and multiple subbands contributing to transport, so $ZT$ increases with increasing confinement, reaching 0.8 for optimally doped 3-nm-thick NWs. The $ZT$ of GaN NWs increases with increasing temperature beyond 1000 K, which further emphasizes their suitability for high-temperature TE applications.

0 citations0 reviewsNo code linkedOpen access