BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

A. H. Davoody

A. H. Davoody contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.dis-nncond-mat.otherquant-ph

Trust snapshot

Quick read

Trust 15 - UnverifiedVerification L1Unclaimed author
3works
0followers
5topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2016arXiv

Dielectric function and plasmons in graphene: A self-consistent-field calculation within a Markovian master equation formalism

We introduce a method for calculating the dielectric function of nanostructures with an arbitrary band dispersion and Bloch wave functions. The linear response of a dissipative electronic system to an external electromagnetic field is calculated by a self-consistent-field approach within a Markovian master equation formalism (SCF-MMEF) coupled with full-wave electromagnetic equations. The SCF-MMEF accurately accounts for several concurrent scattering mechanisms. The method captures interband electron-hole-pair generation, as well as the interband and intraband electron scattering with phonons and impurities. We employ the SCF-MMEF to calculate the dielectric function, complex conductivity, and loss function for supported graphene. From the loss-function maximum, we obtain plasmon dispersion and propagation length for different substrate types [nonpolar diamondlike carbon (DLC) and polar SiO$_2$ and hBN], impurity densities, carrier densities, and temperatures. Plasmons on the two polar substrates are suppressed below the highest surface phonon energy, while the spectrum is broad on the nonpolar DLC. Plasmon propagation lengths are comparable on polar and nonpolar substrates and are on the order of tens of nanometers, considerably shorter than previously reported. They improve with fewer impurities, at lower temperatures, and at higher carrier densities.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Universal features of phonon transport in nanowires with correlated surface roughness

The ultralow thermal conductivity $κ$ observed experimentally in intentionally roughened silicon nanowires (SiNWs) is reproduced in phonon Monte Carlo simulations with exponentially correlated real-space rough surfaces similar to measurement [J. Lim, K. Hippalgaonkar, S. C. Andrews, A. Majumdar, and P. Yang, Nano Lett. 12, 2475 (2012)]. Universal features of thermal transport are revealed by presenting $κ$ as a function of the normalized geometric mean free path $\barλ$ ($0<\barλ<1$); the diffusive (Casimir) limit corresponds to $\barλ=1/2$. $κ$ vs $\barλ$ is exponential at low-to-moderate roughness (high $\barλ$), where internal scattering randomly interrupts phonon bouncing across the SiNW, and linear at high roughness (low $\barλ$), where multiple scattering events at the same surface results in ultralow, amorphous-limit thermal conductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Ultrathin GaN Nanowires: Electronic, Thermal, and Thermoelectric Properties

We present a comprehensive computational study of the electronic, thermal, and thermoelectric (TE) properties of gallium nitride nanowires (NWs) over a wide range of thicknesses (3--9 nm), doping densities ($10^{18}$--$10^{20}$ cm$^{-3}$), and temperatures (300--1000 K). We calculate the low-field electron mobility based on ensemble Monte Carlo transport simulation coupled with a self-consistent solution of the Poisson and Schrödinger equations. We use the relaxation-time approximation and a Poisson-Schrodinger solver to calculate the electron Seebeck coefficient and thermal conductivity. Lattice thermal conductivity is calculated using a phonon ensemble Monte Carlo simulation, with a real-space rough surface described by a Gaussian autocorrelation function. Throughout the temperature range, the Seebeck coefficient increases while the lattice thermal conductivity decreases with decreasing wire cross section, both boding well for TE applications of thin GaN NWs. However, at room temperature these benefits are eventually overcome by the detrimental effect of surface roughness scattering on the electron mobility in very thin NWs. The highest room-temperature $ZT$ of 0.2 is achieved for 4-nm-thick NWs, while further downscaling degrades it. In contrast, at 1000 K, the electron mobility varies weakly with the NW thickness owing to the dominance of polar optical phonon scattering and multiple subbands contributing to transport, so $ZT$ increases with increasing confinement, reaching 0.8 for optimally doped 3-nm-thick NWs. The $ZT$ of GaN NWs increases with increasing temperature beyond 1000 K, which further emphasizes their suitability for high-temperature TE applications.

0 citations0 reviewsNo code linkedOpen access