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A. H. Davoody

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.dis-nn cond-mat.other quant-ph

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preprint2016arXiv

Dielectric function and plasmons in graphene: A self-consistent-field calculation within a Markovian master equation formalism

We introduce a method for calculating the dielectric function of nanostructures with an arbitrary band dispersion and Bloch wave functions. The linear response of a dissipative electronic system to an external electromagnetic field is calculated by a self-consistent-field approach within a Markovian master equation formalism (SCF-MMEF) coupled with full-wave electromagnetic equations. The SCF-MMEF accurately accounts for several concurrent scattering mechanisms. The method captures interband electron-hole-pair generation, as well as the interband and intraband electron scattering with phonons and impurities. We employ the SCF-MMEF to calculate the dielectric function, complex conductivity, and loss function for supported graphene. From the loss-function maximum, we obtain plasmon dispersion and propagation length for different substrate types [nonpolar diamondlike carbon (DLC) and polar SiO $_2$ and hBN], impurity densities, carrier densities, and temperatures. Plasmons on the two polar substrates are suppressed below the highest surface phonon energy, while the spectrum is broad on the nonpolar DLC. Plasmon propagation lengths are comparable on polar and nonpolar substrates and are on the order of tens of nanometers, considerably shorter than previously reported. They improve with fewer impurities, at lower temperatures, and at higher carrier densities.

preprint2016arXiv

Theory of Exciton Energy Transfer in Carbon Nanotube Composites

We compute the exciton transfer (ET) rate between semiconducting single-wall carbon nanotubes (SWNTs). We show that the main reasons for the wide range of measured ET rates reported in the literature are 1) exciton confinement in local quantum wells stemming from disorder in the environment and 2) exciton thermalization between dark and bright states due to intratube scattering. The SWNT excitonic states are calculated by solving the Bethe-Salpeter equation using tight-binding basis functions. The ET rates due to intertube Coulomb interaction are computed via Fermi's golden rule. In pristine samples, the ET rate between parallel (bundled) SWNTs of similar chirality is very high ( $\sim 10^{14}\;\text{s}^{-1}$ ) while the ET rate for dissimilar or nonparallel tubes is considerably lower ( $\sim 10^{12}\;\text{s}^{-1}$ ). Exciton confinement reduces the ET rate between same-chirality parallel SWNTs by two orders of magnitude, but has little effect otherwise. Consequently, the ET rate in most measurements will be on the order of $10^{12}\;\text{s}^{-1}$ , regardless of the tube relative orientation or chirality. Exciton thermalization between bright and dark states further reduces the ET rate to about $10^{11}\;\text{s}^{-1}$ . The ET rate also increases with increasing temperature and decreases with increasing dielectric constant of the surrounding medium.

preprint2015arXiv

Universal features of phonon transport in nanowires with correlated surface roughness

The ultralow thermal conductivity $κ$ observed experimentally in intentionally roughened silicon nanowires (SiNWs) is reproduced in phonon Monte Carlo simulations with exponentially correlated real-space rough surfaces similar to measurement [J. Lim, K. Hippalgaonkar, S. C. Andrews, A. Majumdar, and P. Yang, Nano Lett. 12, 2475 (2012)]. Universal features of thermal transport are revealed by presenting $κ$ as a function of the normalized geometric mean free path $\barλ$ ( $0<\barλ<1$ ); the diffusive (Casimir) limit corresponds to $\barλ=1/2$ . $κ$ vs $\barλ$ is exponential at low-to-moderate roughness (high $\barλ$ ), where internal scattering randomly interrupts phonon bouncing across the SiNW, and linear at high roughness (low $\barλ$ ), where multiple scattering events at the same surface results in ultralow, amorphous-limit thermal conductivity.

preprint2014arXiv

Ultrathin GaN Nanowires: Electronic, Thermal, and Thermoelectric Properties

We present a comprehensive computational study of the electronic, thermal, and thermoelectric (TE) properties of gallium nitride nanowires (NWs) over a wide range of thicknesses (3--9 nm), doping densities ( $10^{18}$ -- $10^{20}$ cm $^{-3}$ ), and temperatures (300--1000 K). We calculate the low-field electron mobility based on ensemble Monte Carlo transport simulation coupled with a self-consistent solution of the Poisson and Schrödinger equations. We use the relaxation-time approximation and a Poisson-Schrodinger solver to calculate the electron Seebeck coefficient and thermal conductivity. Lattice thermal conductivity is calculated using a phonon ensemble Monte Carlo simulation, with a real-space rough surface described by a Gaussian autocorrelation function. Throughout the temperature range, the Seebeck coefficient increases while the lattice thermal conductivity decreases with decreasing wire cross section, both boding well for TE applications of thin GaN NWs. However, at room temperature these benefits are eventually overcome by the detrimental effect of surface roughness scattering on the electron mobility in very thin NWs. The highest room-temperature $ZT$ of 0.2 is achieved for 4-nm-thick NWs, while further downscaling degrades it. In contrast, at 1000 K, the electron mobility varies weakly with the NW thickness owing to the dominance of polar optical phonon scattering and multiple subbands contributing to transport, so $ZT$ increases with increasing confinement, reaching 0.8 for optimally doped 3-nm-thick NWs. The $ZT$ of GaN NWs increases with increasing temperature beyond 1000 K, which further emphasizes their suitability for high-temperature TE applications.

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