Source author record

L. Mouchliadis

L. Mouchliadis appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.other physics.optics

Catalog footprint

What is connected

8works

4topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2020arXiv

Modelling ultrafast non-equilibrium carrier dynamics and relaxation processes upon irradiation of hexagonal Silicon-Carbide with femtosecond laser pulses

We present a theoretical investigation of the yet unexplored dynamics of the produced excited carriers upon irradiation of hexagonal Silicon Carbide (6H-SiC) with femtosecond laser pulses. To describe the ultrafast behaviour of laser induced out-of-equilibrium carriers, a real time simulation based on Density Functional Theory (DFT) methodology is used to compute both the hot carrier dynamics and transient change of the optical properties. A Two-Temperature model (TTM) is also employed to derive the relaxation processes for laser pulses of wavelength 401 nm, duration 50 fs at normal incidence irradiation which indicate that surface damage on the material occurs for fluence ~1.88 Jcm-2. This approach of linking, for the first time, real time calculations, transient optical properties and TTM modelling, has strong implications for understanding both the ultrafast dynamics and relaxation processes and providing a precise investigation of the impact of hot carrier population in surface damage mechanisms in solids.

preprint2016arXiv

Non-thermal separation of electronic and structural orders in a persisting charge density wave

The simultaneous ordering of different degrees of freedom in complex materials undergoing spontaneous symmetry-breaking transitions often involves intricate couplings that have remained elusive in phenomena as wide ranging as stripe formation, unconventional superconductivity or colossal magnetoresistance. Ultrafast optical, x-ray and electron pulses can elucidate the microscopic interplay between these orders by probing the electronic and lattice dynamics separately, but a simultaneous direct observation of multiple orders on the femtosecond scale has been challenging. Here we show that ultrabroadband terahertz pulses can simultaneously trace the ultrafast evolution of coexisting lattice and electronic orders. For the example of a charge-density-wave (CDW) in 1T-TiSe2, we demonstrate that two components of the CDW order parameter - excitonic correlations and a periodic lattice distortion (PLD) - respond very differently to 12-fs optical excitation. Even when the excitonic order of the CDW is quenched, the PLD can persist in a coherently excited state. This observation proves that excitonic correlations are not the sole driving force of the CDW transition in 1T-TiSe2, and exemplifies the sort of profound insight that disentangling strongly coupled components of order parameters in the time domain may provide for the understanding of a broad class of phase transitions.

preprint2011arXiv

Bragg Polaritons: Strong Coupling and Amplification in an Unfolded Microcavity

Periodic incorporation of quantum wells inside a one--dimensional Bragg structure is shown to enhance coherent coupling of excitons to the electromagnetic Bloch waves. We demonstrate strong coupling of quantum well excitons to photonic crystal Bragg modes at the edge of the photonic bandgap, which gives rise to mixed Bragg polariton eigenstates. The resulting Bragg polariton branches are in good agreement with the theory and allow demonstration of Bragg polariton parametric amplification.

preprint2011arXiv

Direct and indirect excitons in semiconductor coupled quantum wells in an applied electric field

An accurate calculation of the exciton ground and excited states in AlGaAs and InGaAs coupled quantum wells (CQWs) in an external electric field is presented. An efficient and straightforward algorithm of solving the Schrodinger equation in real space has been developed and exciton binding energies, oscillator strengths, lifetimes, and absorption spectra are calculated for applied electric fields up to 100 kV/cm. It is found that in symmetric 8-4-8 nm GaAs/Al(0.33)Ga(0.67)As CQW structure, the ground state of the system switches from direct to indirect exciton at approximately 5 kV/cm with dramatic changes of its binding energy and oscillator strength while the bright excited direct-exciton state remains almost unaffected. It is shown that the excitonic lifetime is dominated either by the radiative recombination or by tunneling processes at small/large values of the electric field, respectively. The calculated lifetime of the exciton ground state as a function of the bias voltage is in a quantitative agreement with low-temperature photoluminescence measurements. We have also made freely available a numerical code for calculation of the optical properties of direct and indirect excitons in CQWs in an electric field.

preprint2010arXiv

Comment on "Photoluminescence ring formation in coupled quantum wells: Excitonic versus ambipolar diffusion"

This is a comment on M. Stern, V. Garmider, E. Segre, M. Rappaport, V. Umansky, Y. Levinson, and I. Bar-Joseph, Phys. Rev. Lett. 101, 257402 (2008).

preprint2010arXiv

Supplementary Material to the Comment on "Photoluminescence Ring Formation in Coupled Quantum Wells: Excitonic Versus Ambipolar Diffusion"

This is a supplementary material to our Comment arXiv:0909.4265 on M. Stern, V. Garmider, E. Segre, M. Rappaport, V. Umansky, Y. Levinson, and I. Bar-Joseph, Phys. Rev. Lett. 101, 257402 (2008).

preprint2009arXiv

Kinetics of the inner ring in the exciton emission pattern in GaAs coupled quantum wells

We report on the kinetics of the inner ring in the exciton emission pattern. The formation time of the inner ring following the onset of the laser excitation is found to be about 30 ns. The inner ring was also found to disappear within 4 ns after the laser termination. The latter process is accompanied by a jump in the photoluminescence (PL) intensity. The spatial dependence of the PL-jump indicates that the excitons outside of the region of laser excitation, including the inner ring region, are efficiently cooled to the lattice temperature even during the laser excitation. The ring formation and disappearance are explained in terms of exciton transport and cooling.

preprint2007arXiv

Kinetics of indirect excitons in the optically-induced exciton trap

We report on the kinetics of a low-temperature gas of indirect excitons in the optically-induced exciton trap. The excitons in the region of laser excitation are found to rapidly -- within 4 ns -- cool to the lattice temperature T = 1.4 K, while the excitons at the trap center are found to be cold -- essentially at the lattice temperature -- even during the excitation pulse. The loading time of excitons to the trap center is found to be about 40 ns, longer than the cooling time yet shorter than the lifetime of the indirect excitons. The observed time hierarchy is favorable for creating a dense and cold exciton gas in optically-induced traps and for in situ control of the gas by varying the excitation profile in space and time before the excitons recombine.