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A. L. Ivanov

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Published work

12 published item(s)

preprint2013arXiv

Pattern Formation in the Exciton Inner Ring

We report on the spatially separated pump-probe study of indirect excitons in the inner ring in the exciton emission pattern. A pump laser beam generates the inner ring and a weaker probe laser beam is positioned in the inner ring. The probe beam is found to suppress the exciton emission intensity in the ring. We also report on the inner ring fragmentation and formation of multiple rings in the inner ring region. These features are found to originate from a weak spatial modulation of the excitation beam intensity in the inner ring region. The modulation of exciton emission intensity anti-correlates with the modulation of the laser excitation intensity. The three phenomena - inner ring fragmentation, formation of multiple rings in the inner ring region, and emission suppression by a weak probe laser beam - have a common feature: a reduction of exciton emission intensity in the region of enhanced laser excitation. This effect is explained in terms of exciton transport and thermalization.

preprint2012arXiv

Drift-diffusion model of the fragmentation of the external ring structure in the photoluminescence pattern of indirect excitons in coupled quantum wells

Under optical excitation, coupled quantum wells are known to reveal fascinating features in the photoluminescence pattern originating from dipole orientated indirect excitons. The appearance of an external ring has been attributed to macroscopic charge separation in the quantum well plane. We present a classical model of non-linear diffusion to account for the observed fragmentation of the external ring into a periodic array of islands. The model incorporates the Coulomb interactions between electrons, holes and indirect excitons. At low temperatures, these interactions lead to pattern formation similar to the experimentally observed ring fragmentation. The fragmentation is found to persist to temperatures above the quantum degeneracy temperature of indirect excitons.

preprint2012arXiv

Resonant acousto-optics in the terahertz range: TO-phonon polaritons driven by an ultrasonic wave

The resonant acousto-optic effect is studied both analytically and numerically in the terahertz range where the transverse-optical (TO) phonons play the role of a mediator which strongly couples the ultrasound and light fields. A propagating acoustic wave interacts with the TO phonons via anharmonic channels and opens band gaps in the TO-phonon polariton energy dispersion that results in pronounced Bragg scattering and reflection of the incoming light. The separation in frequency of different Bragg replicas, which is at the heart of acousto-optics, allows us to study the resonant acousto-optic effect in the most simple and efficient geometry of collinear propagation of electromagnetic and ultrasonic waves. The acoustically induced energy gaps, Bragg reflection spectra, and the spatial distribution of the electric field and polarization are calculated for CuCl parameters, in a wide range of frequencies and intensities of the pumping acoustic wave. Our results show drastic changes in terahertz spectra of semiconductor crystals that opens the way for efficient and accessible manipulation of their infrared properties, by tuning the parameters of the acoustic wave.

preprint2012arXiv

Ultrasonic control of terahertz radiation via lattice anharmonicity in LiNbO3

We propose a novel tunable terahertz (THz) filter using the resonant acousto-optic (RAO) effect. We present a design based on a transverse optical (TO) phonon mediated interaction between a coherent acoustic wave and the THz field in LiNbO3. We predict a continuously tunable range of the filter up to 4 THz via the variation of the acoustic frequency between 0.1 and 1 GHz. The RAO effect in this case is due to cubic and quartic anharmonicities between TO phonons and the acoustic field. The effect of the interference between the anharmonicities is also discussed.

preprint2011arXiv

Direct and indirect excitons in semiconductor coupled quantum wells in an applied electric field

An accurate calculation of the exciton ground and excited states in AlGaAs and InGaAs coupled quantum wells (CQWs) in an external electric field is presented. An efficient and straightforward algorithm of solving the Schrodinger equation in real space has been developed and exciton binding energies, oscillator strengths, lifetimes, and absorption spectra are calculated for applied electric fields up to 100 kV/cm. It is found that in symmetric 8-4-8 nm GaAs/Al(0.33)Ga(0.67)As CQW structure, the ground state of the system switches from direct to indirect exciton at approximately 5 kV/cm with dramatic changes of its binding energy and oscillator strength while the bright excited direct-exciton state remains almost unaffected. It is shown that the excitonic lifetime is dominated either by the radiative recombination or by tunneling processes at small/large values of the electric field, respectively. The calculated lifetime of the exciton ground state as a function of the bias voltage is in a quantitative agreement with low-temperature photoluminescence measurements. We have also made freely available a numerical code for calculation of the optical properties of direct and indirect excitons in CQWs in an electric field.

preprint2011arXiv

Electrostatic Conveyer for Excitons

We report on the study of indirect excitons in moving lattices - conveyers created by a set of AC voltages applied to the electrodes on the sample surface. The wavelength of this moving lattice is set by the electrode periodicity, the amplitude is controlled by the applied voltage, and the velocity is controlled by the AC frequency. We observed the dynamical localization-delocalization transition for excitons in the conveyers and measured its dependence on the exciton density and conveyer amplitude and velocity. We considered a model for exciton transport via conveyers. The theoretical simulations are in agreement with the experimental data.

preprint2010arXiv

Terahertz Response of Acoustically-Driven Optical Phonons

The manipulation of TO-phonon polaritons and the terahertz (THz) light field associated with them by means of an ultra-sound acoustic wave is proposed and illustrated by calculating the TO-phonon-mediated THz response of acoustically-pumped CuCl and TlCl crystals. We show the high-contrast acoustically-induced change of the THz reflectivity alongside with multiple THz Bragg replicas, which are associated with the infrared-active TO-phonon resonance driven by the ultrasonic wave. The effect, which stems from phonon anharmonicity, refers to an operating acoustic intensity I_ac ~ 1-100 kW/cm^2 and frequency nu_ac ~ 0.1 - 1 GHz, with possible applications in THz spectroscopy.

preprint2009arXiv

Kinetics of the inner ring in the exciton emission pattern in GaAs coupled quantum wells

We report on the kinetics of the inner ring in the exciton emission pattern. The formation time of the inner ring following the onset of the laser excitation is found to be about 30 ns. The inner ring was also found to disappear within 4 ns after the laser termination. The latter process is accompanied by a jump in the photoluminescence (PL) intensity. The spatial dependence of the PL-jump indicates that the excitons outside of the region of laser excitation, including the inner ring region, are efficiently cooled to the lattice temperature even during the laser excitation. The ring formation and disappearance are explained in terms of exciton transport and cooling.

preprint2007arXiv

Kinetics of indirect excitons in the optically-induced exciton trap

We report on the kinetics of a low-temperature gas of indirect excitons in the optically-induced exciton trap. The excitons in the region of laser excitation are found to rapidly -- within 4 ns -- cool to the lattice temperature T = 1.4 K, while the excitons at the trap center are found to be cold -- essentially at the lattice temperature -- even during the excitation pulse. The loading time of excitons to the trap center is found to be about 40 ns, longer than the cooling time yet shorter than the lifetime of the indirect excitons. The observed time hierarchy is favorable for creating a dense and cold exciton gas in optically-induced traps and for in situ control of the gas by varying the excitation profile in space and time before the excitons recombine.

preprint2003arXiv

Radiative corrections to the excitonic molecule state in GaAs microcavities

The optical properties of excitonic molecules (XXs) in GaAs-based quantum well microcavities (MCs) are studied, both theoretically and experimentally. We show that the radiative corrections to the XX state, the Lamb shift $Δ^{\rm MC}_{\rm XX}$ and radiative width $Γ^{\rm MC}_{\rm XX}$, are large, about $10-30 %$ of the molecule binding energy $ε_{\rm XX}$, and definitely cannot be neglected. The optics of excitonic molecules is dominated by the in-plane resonant dissociation of the molecules into outgoing 1$λ$-mode and 0$λ$-mode cavity polaritons. The later decay channel, ``excitonic molecule $\to$ 0$λ$-mode polariton + 0$λ$-mode polariton'', deals with the short-wavelength MC polaritons invisible in standard optical experiments, i.e., refers to ``hidden'' optics of microcavities. By using transient four-wave mixing and pump-probe spectroscopies, we infer that the radiative width, associated with excitonic molecules of the binding energy $ε_{\rm XX} \simeq 0.9-1.1$ meV, is $Γ^{\rm MC}_{\rm XX} \simeq 0.2-0.3$ meV in the microcavities and $Γ^{\rm QW}_{\rm XX} \simeq 0.1$ meV in a reference GaAs single quantum well (QW). We show that for our high-quality quasi-two-dimensional nanostructures the $T_2 = 2 T_1$ limit, relevant to the XX states, holds at temperatures below 10 K, and that the bipolariton model of excitonic molecules explains quantitatively and self-consistently the measured XX radiative widths. We also find and characterize two critical points in the dependence of the radiative corrections against the microcavity detuning, and propose to use the critical points for high-precision measurements of the molecule bindingenergy and microcavity Rabi splitting.