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Researcher profile

L. Klein

L. Klein contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.str-elcond-mat.mtrl-sci

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Published work

4 published item(s)

preprint2011arXiv

Field-dependent anisotropic magnetoresistance and planar Hall effect in epitaxial magnetite thin films

A systematic study of the temperature and magnetic field dependence of the longitudinal and transverse resistivities of epitaxial thin films of magnetite (Fe3O4) is reported. The anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) are sensitive to the in-plane orientation of current and magnetization with respect to crystal axes in a way consistent with the cubic symmetry of the system. We also show that the AMR exhibit sign reversal as a function of temperature, and that it shows significant field dependence without saturation up to 9 T. Our results provide a unified description of the anisotropic magnetoresistance effects in epitaxial magnetite films and illustrate the need for a full determination of the resistivity tensor in crystalline systems.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

The magnetoresistance tensor of La(0.8)Sr(0.2)MnO(3)

We measure the temperature dependence of the anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) in c-axis oriented epitaxial thin films of La(0.8)Sr(0.2)MnO(3), for different current directions relative to the crystal axes, and show that both AMR and PHE depend strongly on current orientation. We determine a magnetoresistance tensor, extracted to 4th order, which reflects the crystal symmetry and provides a comprehensive description of the data. We extend the applicability of the extracted tensor by determining the bi-axial magnetocrystalline anisotropy in our samples.

0 citations0 reviewsNo code linkedOpen access
preprint2000arXiv

Deviations from Matthiessen's Rule for ${\rm SrRuO_3}$ and ${\rm CaRuO_3}$

We have measured the change in the resistivity of thin films of ${\rm SrRuO_3}$ and ${\rm CaRuO_3}$ upon introducing point defects by electron irradiation at low temperatures, and we find significant deviations from Matthiessen's rule. For a fixed irradiation dose, the induced change in resistivity {\it decreases} with increasing temperature. Moreover, for a fixed temperature, the increase in resistivity with irradiation is found to be {\it sublinear}. We suggest that the observed behavior is due to the marked anisotropic scattering of the electrons together with their relatively short mean free path (both characteristic of many metallic oxides including cuprates) which amplify effects related to the Pippard ineffectiveness condition.

0 citations0 reviewsNo code linkedOpen access
preprint1999arXiv

Observation of domain wall resistivity in $\rm SrRuO_3$

$\rm SrRuO_3$ is an itinerant ferromagnet with $T_c \sim 150 \rm K$. When $\rm SrRuO_3$ is cooled through $T_c$ in zero applied magnetic field, a stripe domain structure appears whose orientation is uniquely determined by the large uniaxial magnetocrystalline anisotropy. We find that the ferromagnetic domain walls clearly enhance the resisitivity of $\rm SrRuO_3$ and that the enhancement has different temperature dependence for currents parallel and perpendicular to the domain walls. We discuss possible interpretations of our results.

0 citations0 reviewsNo code linkedOpen access