Researcher profile

L. D. Varma Sangani

L. D. Varma Sangani contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2025arXiv

Modulation of quantum geometry and its coupling to pseudo-electric field by dynamic strain

Two-dimensional materials are a fertile ground for exploring quantum geometric phenomena, with Berry curvature and its first moment, the Berry curvature dipole, playing a central role in their electronic response. These geometric properties influence electronic transport and result in the anomalous and nonlinear Hall effects, and are typically controlled using static electric fields or strain. However, the possibility of modulating quantum geometric quantities in real-time remains unexplored. Here, we demonstrate the dynamic modulation of Berry curvature and its moments, as well as the generation of a pseudo-electric field using time-dependent strain. By placing heterostructures on a membrane, we introduce oscillatory strain together with an in-plane AC electric field and measure Hall signals that are modulated at linear combinations of the frequencies of strain and electric field. Our measurements reveal modulation of Berry curvature and its first moment. Notably, we provide direct experimental evidence of pseudo-electric field that results in an unusual dynamic strain-induced Hall response. This approach opens up a new pathway for controlling quantum geometry on demand, moving beyond conventional static perturbations. The pseudo-electric field provides a framework for external electric field-free anomalous Hall response and opens new avenues for probing the topological properties.

preprint2020arXiv

Facile deterministic cutting of 2D materials for twistronics using a tapered fibre scalpel

We present a quick and reliable method to cut 2D materials for creating 2D twisted heterostructures and devices. We demonstrate the effectiveness of using a tapered fibre scalped for cutting graphene. Electrical transport measurements show evidence of the desired twist between the graphene layers fabricated using our technique. Statistics of the number of successfully twisted stacks made using our method is compared with h-BN assisted tear-and-stack method. Also, our method can be used for twisted stack fabrication of materials that are few nanometers thick. Finally, we demonstrate the versatility of the tapered fibre scalped for other shaping related applications for sensitive 2D materials.

preprint2020arXiv

Tunable bandwidths and gaps in twisted double bilayer graphene system on the verge of correlations

We use temperature-dependent resistivity in small-angle twisted double bilayer graphene to measure bandwidths and gaps of the bands. This electron-hole asymmetric system has one set of non-dispersing bands that splits into two flat bands with the electric field - distinct from the twisted bilayer system. With electric field, the gap between two emergent flat bands increases monotonically and bandwidth is tuned from 1 meV to 15 meV. These two flat bands with gap result in a series of thermally induced insulator to metal transitions - we use a model, at charge neutrality, to measure the bandwidth using only transport measurements. Having two flat bands with tunable gap and bandwidth offers an opportunity to probe the emergence of correlations.