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L. C. L. Hollenberg

L. C. L. Hollenberg appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallquant-phcond-mat.mtrl-scicond-mat.otherBiological Physicsphysics.app-phphysics.comp-phhep-latphysics.atom-phphysics.data-anphysics.flu-dynphysics.optics

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Published work

31 published item(s)

preprint2022arXiv

Imaging current paths in silicon photovoltaic devices with a quantum diamond microscope

Magnetic imaging with nitrogen-vacancy centers in diamond, also known as quantum diamond microscopy, has emerged as a useful technique for the spatial mapping of charge currents in solid-state devices. In this work, we investigate an application to photovoltaic (PV) devices, where the currents are induced by light. We develop a widefield nitrogen-vacancy microscope that allows independent stimulus and measurement of the PV device, and test our system on a range of prototype crystalline silicon PV devices. We first demonstrate micrometer-scale vector magnetic field imaging of custom PV devices illuminated by a focused laser spot, revealing the internal current paths in both short-circuit and open-circuit conditions. We then demonstrate time-resolved imaging of photocurrents in an interdigitated back-contact solar cell, detecting current build-up and subsequent decay near the illumination point with microsecond resolution. This work presents a versatile and accessible analysis platform that may find distinct application in research on emerging PV technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Varied magnetic phases in a van der Waals easy-plane antiferromagnet revealed by nitrogen-vacancy center microscopy

Interest in van der Waals materials often stems from a desire to miniaturise existing technologies by exploiting their intrinsic layered structure to create near atomically-thin components that do not suffer from surface defects. One appealing property is easily-switchable yet robust magnetic order, a quality only sparsely demonstrated in the case of in-plane anisotropy. In this work, we use widefield nitrogen-vacancy (NV) center magnetic imaging to measure the properties of individual flakes of CuCrP$_2$S$_6$, a multiferroic van der Waals magnet known to exhibit weak easy-plane anisotropy in the bulk. We chart the crossover between in-plane ferromagnetism in thin flakes down to the trilayer, and the bulk behaviour dominated by a low-field spin-flop transition. Further, by exploiting the directional dependence of NV center magnetometry, we are able to observe an instance of a predominantly out-of-plane ferromagetic phase near zero field, in contradiction with expectation and previous experiments on the bulk material. We attribute this to the presence of surface anisotropies arising from the sample preparation process or exposure to the ambient environment, which is expected to have more general implications for a broader class of weakly anisotropic van der Waals magnets.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Epitaxial growth of SiC on (100) Diamond

We demonstrate locally coherent heteroepitaxial growth of silicon carbide (SiC) on diamond, a result contrary to current understanding of heterojunctions as the lattice mismatch exceeds $20\%$. High-resolution transmission electron microscopy (HRTEM) confirms the quality and atomic structure near the interface. Guided by molecular dynamics simulations, a theoretical model is proposed for the interface wherein the large lattice strain is alleviated via point dislocations in a two-dimensional plane without forming extended defects in three dimensions. The possibility of realising heterojunctions of technologically important materials such as SiC with diamond offers promising pathways for thermal management of high power electronics. At a fundamental level, the study redefines our understanding of heterostructure formation with large lattice mismatch.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Improved current density and magnetisation reconstruction through vector magnetic field measurements

Stray magnetic fields contain significant information about the electronic and magnetic properties of condensed matter systems. For two-dimensional (2D) systems, stray field measurements can even allow full determination of the source quantity. For instance, a 2D map of the stray magnetic field can be uniquely transformed into the 2D current density that gave rise to the field and, under some conditions, into the equivalent 2D magnetisation. However, implementing these transformations typically requires truncation of the initial data and involves singularities that may introduce errors, artefacts, and amplify noise. Here we investigate the possibility of mitigating these issues through vector measurements. For each scenario (current reconstruction and magnetisation reconstruction) the different possible reconstruction pathways are analysed and their performances compared. In particular, we find that the simultaneous measurement of both in-plane components ($B_x$ and $B_y$) enables near-ideal reconstruction of the current density, without singularity or truncation artefacts, which constitutes a significant improvement over reconstruction based on a single component (e.g. $B_z$). On the other hand, for magnetisation reconstruction, a single measurement of the out-of-plane field ($B_z$) is generally the best choice, regardless of the magnetisation direction. We verify these findings experimentally using nitrogen-vacancy magnetometry in the case of a 2D current density and a 2D magnet with perpendicular magnetisation.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Prospects for nuclear spin hyperpolarisation of molecular samples using nitrogen-vacancy centres in diamond

After initial proof-of-principle demonstrations, optically pumped nitrogen-vacancy (NV) centres in diamond have been proposed as a non-invasive platform to achieve hyperpolarisation of nuclear spins in molecular samples over macroscopic volumes and enhance the sensitivity in nuclear magnetic resonance (NMR) experiments. In this work, we model the process of polarisation of external samples by NV centres and theoretically evaluate their performance in a range of scenarios. We find that average nuclear spin polarisations exceeding 10% can in principle be generated over macroscopic sample volumes ($\gtrsimĪ¼$L) with a careful engineering of the system's geometry to maximise the diamond-sample contact area. The fabrication requirements and other practical challenges are discussed. We then explore the possibility of exploiting local polarisation enhancements in nano/micro-NMR experiments based on NV centres. For micro-NMR, we find that modest signal enhancements over thermal polarisation (by 1-2 orders of magnitude) can in essence be achieved with existing technology, with larger enhancements achievable via micro-structuring of the sample/substrate interface. However, there is generally no benefit for nano-NMR where the detection of statistical polarisation provides the largest signal-to-noise ratio. This work will guide future experimental efforts to integrate NV-based hyperpolarisation to NMR systems.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Ab initio calculation of energy levels for phosphorus donors in silicon

The s manifold energy levels for phosphorus donors in silicon are important input parameters for the design and modelling of electronic devices on the nanoscale. In this paper we calculate these energy levels from first principles using density functional theory. The wavefunction of the donor electron's ground state is found to have a form that is similar to an atomic s orbital, with an effective Bohr radius of 1.8 nm. The corresponding binding energy of this state is found to be 41 meV, which is in good agreement with the currently accepted value of 45.59 meV. We also calculate the energies of the excited 1s(T) and 1s(E) states, finding them to be 32 and 31 meV respectively. These results constitute the first ab initio confirmation of the s manifold energy levels for phosphorus donors in silicon.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Quantum Simulation of the Hubbard Model with Dopant Atoms in Silicon

In quantum simulation, many-body phenomena are probed in controllable quantum systems. Recently, simulation of Bose-Hubbard Hamiltonians using cold atoms revealed previously hidden local correlations. However, fermionic many-body Hubbard phenomena such as unconventional superconductivity and spin liquids are more difficult to simulate using cold atoms. To date the required single-site measurements and cooling remain problematic, while only ensemble measurements have been achieved. Here we simulate a two-site Hubbard Hamiltonian at low effective temperatures with single-site resolution using subsurface dopants in silicon. We measure quasiparticle tunneling maps of spin-resolved states with atomic resolution, finding interference processes from which the entanglement entropy and Hubbard interactions are quantified. Entanglement, determined by spin and orbital degrees of freedom, increases with increasing covalent bond length. We find separation-tunable Hubbard interaction strengths that are suitable for simulating strongly correlated phenomena in larger arrays of dopants, establishing dopants as a platform for quantum simulation of the Hubbard model.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electron Spin Resonance Spectroscopy via Relaxation of Solid-State Spin Probes at the Nanoscale

Electron Spin Resonance (ESR) describes a suite of techniques for characterising electronic systems, with applications in physics, materials science, chemistry, and biology. However, the requirement for large electron spin ensembles in conventional ESR techniques limits their spatial resolution. Here we present a method for measuring the ESR spectrum of nanoscale electronic environments by measuring the relaxation time ($T_1$) of an optically addressed single-spin probe as it is systematically tuned into resonance with the target electronic system. As a proof of concept we extract the spectral distribution for the P1 electronic spin bath in diamond using an ensemble of nitrogen-vacancy centres, and demonstrate excellent agreement with theoretical expectations. As the response of each NV spin in this experiment is dominated by a single P1 spin at a mean distance of 2.7\,nm, the extension of this all-optical technique to the single NV case will enable nanoscale ESR spectroscopy of atomic and molecular spin systems.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Spatially Resolving Valley Quantum Interference of a Donor in Silicon

Electron and nuclear spins of donor ensembles in isotopically pure silicon experience a vacuum-like environment, giving them extraordinary coherence. However, in contrast to a real vacuum, electrons in silicon occupy quantum superpositions of valleys in momentum space. Addressable single-qubit and two-qubit operations in silicon require that qubits are placed near interfaces, modifying the valley degrees of freedom associated with these quantum superpositions and strongly influencing qubit relaxation and exchange processes. Yet to date, spectroscopic measurements only indirectly probe wavefunctions, preventing direct experimental access to valley population, donor position, and environment. Here we directly probe the probability density of single quantum states of individual subsurface donors, in real space and reciprocal space, using scanning tunneling spectroscopy. We directly observe quantum mechanical valley interference patterns associated with linear superpositions of valleys in the donor ground state. The valley population is found to be within $5 \%$ of a bulk donor when $2.85\pm0.45$ nm from the interface, indicating that valley perturbation-induced enhancement of spin relaxation will be negligible for depths $>3$ nm. The observed valley interference will render two-qubit exchange gates sensitive to atomic-scale variations in positions of subsurface donors. Moreover, these results will also be of interest to emerging schemes proposing to encode information directly in valley polarization.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Ambient Nanoscale Sensing with Single Spins Using Quantum Decoherence

Magnetic resonance detection is one of the most important tools used in life-sciences today. However, as the technique detects the magnetization of large ensembles of spins it is fundamentally limited in spatial resolution to mesoscopic scales. Here we detect the natural fluctuations of nanoscale spin ensembles at ambient temperatures by measuring the decoherence rate of a single quantum spin in response to introduced extrinsic target spins. In our experiments 45 nm nanodiamonds with single nitrogen-vacancy (NV) spins were immersed in solution containing spin 5/2 Mn^2+ ions and the NV decoherence rate measured though optically detected magnetic resonance. The presence of both freely moving and accreted Mn spins in solution were detected via significant changes in measured NV decoherence rates. Analysis of the data using a quantum cluster expansion treatment of the NV-target system found the measurements to be consistent with the detection of ~2,500 motionally diffusing Mn spins over an effective volume of (16 nm)^3 in 4.2 s, representing a reduction in target ensemble size and acquisition time of several orders of magnitude over state-of-the-art electron spin resonance detection. These measurements provide the basis for the detection of nanoscale magnetic field fluctuations with unprecedented sensitivity and resolution in ambient conditions.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Measurable quantum geometric phase from a rotating single spin

We demonstrate that the internal magnetic states of a single nitrogen-vacancy defect, within a rotating diamond crystal, acquire geometric phases. The geometric phase shift is manifest as a relative phase between components of a superposition of magnetic substates. We demonstrate that under reasonable experimental conditions a phase shift of up to four radians could be measured. Such a measurement of the accumulation of a geometric phase, due to macroscopic rotation, would be the first for a single atom-scale quantum system.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Nanoscale magnetometry through quantum control of nitrogen-vacancy centres in rotationally diffusing nanodiamonds

The confluence of quantum physics and biology is driving a new generation of quantum-based sensing and imaging technology capable of harnessing the power of quantum effects to provide tools to understand the fundamental processes of life. One of the most promising systems in this area is the nitrogen-vacancy centre in diamond - a natural spin qubit which remarkably has all the right attributes for nanoscale sensing in ambient biological conditions. Typically the nitrogen-vacancy qubits are fixed in tightly controlled/isolated experimental conditions. In this work quantum control principles of nitrogen-vacancy magnetometry are developed for a randomly diffusing diamond nanocrystal. We find that the accumulation of geometric phases, due to the rotation of the nanodiamond plays a crucial role in the application of a diffusing nanodiamond as a bio-label and magnetometer. Specifically, we show that a freely diffusing nanodiamond can offer real-time information about local magnetic fields and its own rotational behaviour, beyond continuous optically detected magnetic resonance monitoring, in parallel with operation as a fluorescent biomarker.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Thermodynamic stability of neutral Xe defects in diamond

Optically active defect centers in diamond are of considerable interest, and ab initio calculations have provided valuable insight into the physics of these systems. Candidate structures for the Xe center in diamond, for which little structural information is known, are modeled using density functional theory. The relative thermodynamic stabilities were calculated for two likely structural arrangements. The split-vacancy structure is found to be the most stable for all temperatures up to 1500 K. A vibrational analysis was also carried out, predicting Raman- and IR-active modes which may aid in distinguishing between center structures.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Dopant metrology in advanced FinFETs

Ultra-scaled FinFET transistors bear unique fingerprint-like device-to-device differences attributed to random single impurities. This paper describes how, through correlation of experimental data with multimillion atom tight-binding simulations using the NEMO 3-D code, it is possible to identify the impurity's chemical species and determine their concentration, local electric field and depth below the Si/SiO$_{\mathrm{2}}$ interface. The ability to model the excited states rather than just the ground state is the critical component of the analysis and allows the demonstration of a new approach to atomistic impurity metrology.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electric field reduced charging energies and two-electron bound excited states of single donors in silicon

We present atomistic simulations of the D0 to D- charging energies of a gated donor in silicon as a function of applied fields and donor depths and find good agreement with experimental measure- ments. A self-consistent field large-scale tight-binding method is used to compute the D- binding energies with a domain of over 1.4 million atoms, taking into account the full bandstructure of the host, applied fields, and interfaces. An applied field pulls the loosely bound D- electron towards the interface and reduces the charging energy significantly below the bulk values. This enables formation of bound excited D-states in these gated donors, in contrast to bulk donors. A detailed quantitative comparison of the charging energies with transport spectroscopy measurements with multiple samples of arsenic donors in ultra-scaled FinFETs validates the model results and provides physical insights. We also report measured D-data showing for the first time the presence of bound D-excited states under applied fields.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Engineered valley-orbit splittings in quantum confined nanostructures in silicon

An important challenge in silicon quantum electronics in the few electron regime is the potentially small energy gap between the ground and excited orbital states in 3D quantum confined nanostructures due to the multiple valley degeneracies of the conduction band present in silicon. Understanding the "valley-orbit" (VO) gap is essential for silicon qubits, as a large VO gap prevents leakage of the qubit states into a higher dimensional Hilbert space. The VO gap varies considerably depending on quantum confinement, and can be engineered by external electric fields. In this work we investigate VO splitting experimentally and theoretically in a range of confinement regimes. We report measurements of the VO splitting in silicon quantum dot and donor devices through excited state transport spectroscopy. These results are underpinned by large-scale atomistic tight-binding calculations involving over 1 million atoms to compute VO splittings as functions of electric fields, donor depths, and surface disorder. The results provide a comprehensive picture of the range of VO splittings that can be achieved through quantum engineering.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Lifetime enhanced transport in silicon due to spin and valley blockade

We report the observation of Lifetime Enhanced Transport (LET) based on perpendicular valleys in silicon by transport spectroscopy measurements of a two-electron system in a silicon transistor. The LET is manifested as a peculiar current step in the stability diagram due to a forbidden transition between an excited state and any of the lower energy states due perpendicular valley (and spin) configurations, offering an additional current path. By employing a detailed temperature dependence study in combination with a rate equation model, we estimate the lifetime of this particular state to exceed 48 ns. The two-electron spin-valley configurations of all relevant confined quantum states in our device were obtained by a large-scale atomistic tight-binding simulation. The LET acts as a signature of the complicated valley physics in silicon; a feature that becomes increasingly important in silicon quantum devices.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Theory of the ground state spin of the NV- center in diamond: I. Fine structure, hyperfine structure, and interactions with electric, magnetic and strain fields

The ground state spin of the negatively charged nitrogen-vacancy center in diamond has been the platform for the recent rapid expansion of new frontiers in quantum metrology and solid state quantum information processing. In ambient conditions, the spin has been demonstrated to be a high precision magnetic and electric field sensor as well as a solid state qubit capable of coupling with nearby nuclear and electronic spins. However, in spite of its many outstanding demonstrations, the theory of the spin has not yet been fully developed and there does not currently exist thorough explanations for many of its properties, such as the anisotropy of the electron g-factor and the existence of Stark effects and strain splittings. In this work, the theory of the ground state spin is fully developed for the first time using the molecular orbital theory of the center in order to provide detailed explanations for the spin's fine and hyperfine structures and its interactions with electric, magnetic and strain fields.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

A highly efficient two level diamond based single photon source

An unexplored diamond defect centre which is found to emit stable single photons at a measured rate of 1.6 MHz at room temperature is reported. The novel centre, identified in chemical vapour deposition grown diamond crystals, exhibits a sharp zero phonon line at 734 nm with a full width at half maximum of ~ 4 nm. The photon statistics confirm the center is a single emitter and provides direct evidence of the first true two-level single quantum system in diamond.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Graphical algorithms and threshold error rates for the 2d colour code

Recent work on fault-tolerant quantum computation making use of topological error correction shows great potential, with the 2d surface code possessing a threshold error rate approaching 1% (NJoP 9:199, 2007), (arXiv:0905.0531). However, the 2d surface code requires the use of a complex state distillation procedure to achieve universal quantum computation. The colour code of (PRL 97:180501, 2006) is a related scheme partially solving the problem, providing a means to perform all Clifford group gates transversally. We review the colour code and its error correcting methodology, discussing one approximate technique based on graph matching. We derive an analytic lower bound to the threshold error rate of 6.25% under error-free syndrome extraction, while numerical simulations indicate it may be as high as 13.3%. Inclusion of faulty syndrome extraction circuits drops the threshold to approximately 0.1%.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Modelling the effect of charge noise on the exchange interaction between spins

We describe how the effect of charge noise on a pair of spins coupled via the exchange interaction can be calculated by modelling charge fluctuations as a random telegraph noise process using probability density functions. We develop analytic expressions for the time dependent superoperator of a pair of spins as a function of fluctuation amplitude and rate. We show that the theory can be extended to include multiple fluctuators, in particular, spectral distributions of fluctuators. These superoperators can be included in time dependent analyses of the state of spin systems designed for spintronics or quantum information processing to determine the decohering effects of exchange fluctuations.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Monitoring Ion Channel Function In Real Time Through Quantum Decoherence

In drug discovery research there is a clear and urgent need for non-invasive detection of cell membrane ion channel operation with wide-field capability. Existing techniques are generally invasive, require specialized nano structures, or are only applicable to certain ion channel species. We show that quantum nanotechnology has enormous potential to provide a novel solution to this problem. The nitrogen-vacancy (NV) centre in nano-diamond is currently of great interest as a novel single atom quantum probe for nanoscale processes. However, until now, beyond the use of diamond nanocrystals as fluorescence markers, nothing was known about the quantum behaviour of a NV probe in the complex room temperature extra-cellular environment. For the first time we explore in detail the quantum dynamics of a NV probe in proximity to the ion channel, lipid bilayer and surrounding aqueous environment. Our theoretical results indicate that real-time detection of ion channel operation at millisecond resolution is possible by directly monitoring the quantum decoherence of the NV probe. With the potential to scan and scale-up to an array-based system this conclusion may have wide ranging implications for nanoscale biology and drug discovery.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Nano-manipulation of diamond-based single photon sources

The ability to manipulate nano-particles at the nano-scale is critical for the development of active quantum systems. This paper presents a new technique to manipulate diamond nano-crystals at the nano-scale using a scanning electron microscope, nano-manipulator and custom tapered optical fibre probes. The manipulation of a ~ 300 nm diamond crystal, containing a single nitrogen-vacancy centre, onto the endface of an optical fibre is demonstrated. The emission properties of the single photon source post manipulation are in excellent agreement with those observed on the original substrate.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Probe and Control of the Reservoir Density of States in Single-Electron Devices

We present a systematic study of quasi-one-dimensional density of states (DOS) in electron accumulation layers near a Si-SiO2 interface. In the experiments we have employed two conceptually different objects to probe DOS, namely, a phosphorus donor and a quantum dot, both operating in the single-electron tunneling regime. We demonstrate how the peaks in DOS can be moved in the transport window independently of the other device properties, and in agreement with the theoretical analysis. This method introduces a fast and convenient way of identifying excited states in these emerging nanostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Single atom-scale diamond defect allows large Aharonov-Casher phase

We propose an experiment that would produce and measure a large Aharonov-Casher (A-C) phase in a solid-state system under macroscopic motion. A diamond crystal is mounted on a spinning disk in the presence of a uniform electric field. Internal magnetic states of a single NV defect, replacing interferometer trajectories, are coherently controlled by microwave pulses. The A-C phase shift is manifested as a relative phase, of up to 17 radians, between components of a superposition of magnetic substates, which is two orders of magnitude larger than that measured in any other atom-scale quantum system.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Threshold error rates for the toric and surface codes

The surface code scheme for quantum computation features a 2d array of nearest-neighbor coupled qubits yet claims a threshold error rate approaching 1% (NJoP 9:199, 2007). This result was obtained for the toric code, from which the surface code is derived, and surpasses all other known codes restricted to 2d nearest-neighbor architectures by several orders of magnitude. We describe in detail an error correction procedure for the toric and surface codes, which is based on polynomial-time graph matching techniques and is efficiently implementable as the classical feed-forward processing step in a real quantum computer. By direct simulation of this error correction scheme, we determine the threshold error rates for the two codes (differing only in their boundary conditions) for both ideal and non-ideal syndrome extraction scenarios. We verify that the toric code has an asymptotic threshold of p = 15.5% under ideal syndrome extraction, and p = 7.8 10^-3 for the non-ideal case, in agreement with prior work. Simulations of the surface code indicate that the threshold is close to that of the toric code.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Matterwave Transport Without Transit

Classically it is impossible to have transport without transit, i.e., if the points one, two and three lie sequentially along a path then an object moving from one to three must, at some point in time, be located at two. However, for a quantum particle in a three-well system it is possible to transport the particle between wells one and three such that the probability of finding it at any time in the classically accessible state in well two is negligible. We consider theoretically the analogous scenario for a Bose-Einstein condensate confined within a three well system. In particular, we predict the adiabatic transportation of an interacting Bose-Einstein condensate of 2000 Li atoms from well one to well three without transiting the allowed intermediate region. To an observer of this macroscopic quantum effect it would appear that, over a timescale of the order of one second, the condensate had transported, but not transited, a macroscopic distance of 20 microns between wells one and three.

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preprint2005arXiv

Spin transport and quasi 2D architectures for donor-based quantum computing

Through the introduction of a new electron spin transport mechanism, a 2D donor electron spin quantum computer architecture is proposed. This design addresses major technical issues in the original Kane design, including spatial oscillations in the exchange coupling strength and cross-talk in gate control. It is also expected that the introduction of a degree of non-locality in qubit gates will significantly improve the scaling fault-tolerant threshold over the nearest-neighbour linear array.

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preprint2004arXiv

Global control and fast solid-state donor electron spin quantum computing

We propose a scheme for quantum information processing based on donor electron spins in semiconductors, with an architecture complementary to the original Kane proposal. We show that a naive implementation of electron spin qubits provides only modest improvement over the Kane scheme, however through the introduction of global gate control we are able to take full advantage of the fast electron evolution timescales. We estimate that the latent clock speed is 100-1000 times that of the nuclear spin quantum computer with the ratio $T_{2}/T_{ops}$ approaching the $10^{6}$ level.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Single-spin readout for buried dopant semiconductor qubits

In the design of quantum computer architectures that take advantage of the long coherence times of dopant nuclear and electron spins in the solid-state, single-spin detection for readout remains a crucial unsolved problem. Schemes based on adiabatically induced spin-dependent electron tunnelling between individual donor atoms, detected using a single electron transistor (SET) as an ultra-sensitive electrometer, are thought to be problematic because of the low ionisaton energy of the final D- state. In this paper we analyse the adiabatic scheme in detail. We find that despite significant stabilization due to the presence of the D+, the field strengths required for the transition lead to a shortened dwell-time placing severe constraints on the SET measurement time. We therefore investigate a new method based on resonant electron transfer, which operates with much reduced field strengths. Various issues in the implementation of this method are also discussed.

0 citations0 reviewsNo code linkedOpen access