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R. Rahman

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Published work

10 published item(s)

preprint2022arXiv

Uncertainty-quantified phenomenological optical potentials for single-nucleon scattering

Optical-model potentials (OMPs) continue to play a key role in nuclear reaction calculations. However, the uncertainty of phenomenological OMPs in widespread use -- inherent to any parametric model trained on data -- has not been fully characterized, and its impact on downstream users of OMPs remains unclear. Here we assign well-calibrated uncertainties for two representative global OMPs, those of Koning-Delaroche and Chapel Hill '89, using Markov-Chain Monte Carlo for parameter inference. By comparing the canonical versions of these OMPs against the experimental data originally used to constrain them, we show how a lack of outlier rejection and a systematic underestimation of experimental uncertainties contributes to bias of, and overconfidence in, best-fit parameter values. Our updated, uncertainty-quantified versions of these OMPs address these issues and yield complete covariance information for potential parameters. Scattering predictions generated from our ensembles show improved performance both against the original training corpora of experimental data and against a new "test" corpus comprising many of the experimental single-nucleon scattering data collected over the last twenty years. Finally, we apply our uncertainty-quantified OMPs to two case studies of application-relevant cross sections. We conclude that, for many common applications of OMPs, including OMP uncertainty should become standard practice. To facilitate their immediate use, digital versions of our updated OMPs and related tools for forward uncertainty propagation are included as Supplementary Material.

preprint2016arXiv

Quantum Simulation of the Hubbard Model with Dopant Atoms in Silicon

In quantum simulation, many-body phenomena are probed in controllable quantum systems. Recently, simulation of Bose-Hubbard Hamiltonians using cold atoms revealed previously hidden local correlations. However, fermionic many-body Hubbard phenomena such as unconventional superconductivity and spin liquids are more difficult to simulate using cold atoms. To date the required single-site measurements and cooling remain problematic, while only ensemble measurements have been achieved. Here we simulate a two-site Hubbard Hamiltonian at low effective temperatures with single-site resolution using subsurface dopants in silicon. We measure quasiparticle tunneling maps of spin-resolved states with atomic resolution, finding interference processes from which the entanglement entropy and Hubbard interactions are quantified. Entanglement, determined by spin and orbital degrees of freedom, increases with increasing covalent bond length. We find separation-tunable Hubbard interaction strengths that are suitable for simulating strongly correlated phenomena in larger arrays of dopants, establishing dopants as a platform for quantum simulation of the Hubbard model.

preprint2015arXiv

Interface-induced heavy-hole/light-hole splitting of acceptors in silicon

The energy spectrum of spin-orbit coupled states of individual sub-surface boron acceptor dopants in silicon have been investigated using scanning tunneling spectroscopy (STS) at cryogenic temperatures. The spatially resolved tunnel spectra show two resonances which we ascribe to the heavy- and light-hole Kramers doublets. This type of broken degeneracy has recently been argued to be advantageous for the lifetime of acceptor-based qubits [Phys. Rev. B 88 064308 (2013)]. The depth dependent energy splitting between the heavy- and light-hole Kramers doublets is consistent with tight binding calculations, and is in excess of 1 meV for all acceptors within the experimentally accessible depth range (< 2 nm from the surface). These results will aid the development of tunable acceptor-based qubits in silicon with long coherence times and the possibility for electrical manipulation.

preprint2015arXiv

Spatially resolved resonant tunneling on single atoms in silicon

The ability to control single dopants in solid-state devices has opened the way towards reliable quantum computation schemes. In this perspective it is essential to understand the impact of interfaces and electric fields, inherent to address coherent electronic manipulation, on the dopants atomic scale properties. This requires both fine energetic and spatial resolution of the energy spectrum and wave-function, respectively. Here we present an experiment fulfilling both conditions: we perform transport on single donors in silicon close to a vacuum interface using a scanning tunneling microscope (STM) in the single electron tunneling regime. The spatial degrees of freedom of the STM tip provide a versatility allowing a unique understanding of electrostatics. We obtain the absolute energy scale from the thermal broadening of the resonant peaks, allowing to deduce the charging energies of the donors. Finally we use a rate equations model to derive the current in presence of an excited state, highlighting the benefits of the highly tunable vacuum tunnel rates which should be exploited in further experiments. This work provides a general framework to investigate dopant-based systems at the atomic scale.

preprint2015arXiv

Spatially Resolving Valley Quantum Interference of a Donor in Silicon

Electron and nuclear spins of donor ensembles in isotopically pure silicon experience a vacuum-like environment, giving them extraordinary coherence. However, in contrast to a real vacuum, electrons in silicon occupy quantum superpositions of valleys in momentum space. Addressable single-qubit and two-qubit operations in silicon require that qubits are placed near interfaces, modifying the valley degrees of freedom associated with these quantum superpositions and strongly influencing qubit relaxation and exchange processes. Yet to date, spectroscopic measurements only indirectly probe wavefunctions, preventing direct experimental access to valley population, donor position, and environment. Here we directly probe the probability density of single quantum states of individual subsurface donors, in real space and reciprocal space, using scanning tunneling spectroscopy. We directly observe quantum mechanical valley interference patterns associated with linear superpositions of valleys in the donor ground state. The valley population is found to be within $5 \%$ of a bulk donor when $2.85\pm0.45$ nm from the interface, indicating that valley perturbation-induced enhancement of spin relaxation will be negligible for depths $>3$ nm. The observed valley interference will render two-qubit exchange gates sensitive to atomic-scale variations in positions of subsurface donors. Moreover, these results will also be of interest to emerging schemes proposing to encode information directly in valley polarization.

preprint2012arXiv

Molecular Dynamics Simulation of Cross-linked Graphene-Epoxy Nanocomposites

This paper focuses on molecular dynamics (MD) modeling of graphene reinforced cross-linked epoxy (Gr-Ep) nanocomposite. The goal is to study the influence of geometry, and concentration of reinforcing nanographene sheet (NGS) on interfacial properties and elastic constants such as bulk Young's modulus, and shear modulus of Gr-Ep nanocomposites. The most typical cross-linked configuration was obtained in order to use in further simulations. The mechanical properties of this cross-linked structure were determined using MD simulations and the results were verified with those available in literatures. Graphene with different aspect ratios and concentrations (1%, 3% and 5%) were considered in order to construct amorphous unit cells of Gr-Ep nanocomposites. The Gr-Ep nanocomposites system undergoes NVT (constant number of atoms, volume and temperature) and NPT (constant number of atoms, pressure and temperature) ensemble with applied uniform strain field during MD simulation to obtain bulk Young's modulus and shear modulus. The stress-strain response was also evaluated for both amorphous and crystalline unit cells of Gr-Ep system under uni-axial deformation. The cohesive and pullout force vs. displacement response were determined for graphenes with different size. Hence as primary goal of this work, a parametric study using MD simulation was conducted for characterizing interfacial properties and elastic constants with different NGS aspect rations and volume fractions. The MD simulation results show reasonable agreement with available published data in the literature.

preprint2011arXiv

Dopant metrology in advanced FinFETs

Ultra-scaled FinFET transistors bear unique fingerprint-like device-to-device differences attributed to random single impurities. This paper describes how, through correlation of experimental data with multimillion atom tight-binding simulations using the NEMO 3-D code, it is possible to identify the impurity's chemical species and determine their concentration, local electric field and depth below the Si/SiO$_{\mathrm{2}}$ interface. The ability to model the excited states rather than just the ground state is the critical component of the analysis and allows the demonstration of a new approach to atomistic impurity metrology.

preprint2011arXiv

Electric field reduced charging energies and two-electron bound excited states of single donors in silicon

We present atomistic simulations of the D0 to D- charging energies of a gated donor in silicon as a function of applied fields and donor depths and find good agreement with experimental measure- ments. A self-consistent field large-scale tight-binding method is used to compute the D- binding energies with a domain of over 1.4 million atoms, taking into account the full bandstructure of the host, applied fields, and interfaces. An applied field pulls the loosely bound D- electron towards the interface and reduces the charging energy significantly below the bulk values. This enables formation of bound excited D-states in these gated donors, in contrast to bulk donors. A detailed quantitative comparison of the charging energies with transport spectroscopy measurements with multiple samples of arsenic donors in ultra-scaled FinFETs validates the model results and provides physical insights. We also report measured D-data showing for the first time the presence of bound D-excited states under applied fields.

preprint2011arXiv

Engineered valley-orbit splittings in quantum confined nanostructures in silicon

An important challenge in silicon quantum electronics in the few electron regime is the potentially small energy gap between the ground and excited orbital states in 3D quantum confined nanostructures due to the multiple valley degeneracies of the conduction band present in silicon. Understanding the "valley-orbit" (VO) gap is essential for silicon qubits, as a large VO gap prevents leakage of the qubit states into a higher dimensional Hilbert space. The VO gap varies considerably depending on quantum confinement, and can be engineered by external electric fields. In this work we investigate VO splitting experimentally and theoretically in a range of confinement regimes. We report measurements of the VO splitting in silicon quantum dot and donor devices through excited state transport spectroscopy. These results are underpinned by large-scale atomistic tight-binding calculations involving over 1 million atoms to compute VO splittings as functions of electric fields, donor depths, and surface disorder. The results provide a comprehensive picture of the range of VO splittings that can be achieved through quantum engineering.

preprint2011arXiv

Lifetime enhanced transport in silicon due to spin and valley blockade

We report the observation of Lifetime Enhanced Transport (LET) based on perpendicular valleys in silicon by transport spectroscopy measurements of a two-electron system in a silicon transistor. The LET is manifested as a peculiar current step in the stability diagram due to a forbidden transition between an excited state and any of the lower energy states due perpendicular valley (and spin) configurations, offering an additional current path. By employing a detailed temperature dependence study in combination with a rate equation model, we estimate the lifetime of this particular state to exceed 48 ns. The two-electron spin-valley configurations of all relevant confined quantum states in our device were obtained by a large-scale atomistic tight-binding simulation. The LET acts as a signature of the complicated valley physics in silicon; a feature that becomes increasingly important in silicon quantum devices.