Researcher profile

L. Balents

L. Balents contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Giant modulation of optical nonlinearity by Floquet engineering

Strong periodic driving with light offers the potential to coherently manipulate the properties of quantum materials on ultrafast timescales. Recently, strategies have emerged to drastically alter electronic and magnetic properties by optically inducing non-trivial band topologies, emergent spin interactions and even superconductivity. However, the prospects and methods of coherently engineering optical properties on demand are far less understood. Here we demonstrate coherent control and giant modulation of optical nonlinearity in a van der Waals layered magnetic insulator, manganese phosphorus trisulfide (MnPS$_3$). By driving far off-resonance from the lowest on-site manganese $d$-$d$ transition, we observe a coherent on-off switching of its optical second harmonic generation efficiency on the timescale of 100 femtoseconds with no measurable dissipation. At driving electric fields of the order of 10$^9$ volts per metre, the on-off ratio exceeds 10, which is limited only by the sample damage threshold. Floquet theory calculations based on a single-ion model of MnPS$_3$ are able to reproduce the measured driving field amplitude and polarization dependence of the effect. Our approach can be applied to a broad range of insulating materials and could lead to dynamically designed nonlinear optical elements.

preprint2019arXiv

Intrinsic quantized anomalous Hall effect in a moiré heterostructure

We report the observation of a quantum anomalous Hall effect in twisted bilayer graphene showing Hall resistance quantized to within .1\% of the von Klitzing constant $h/e^2$ at zero magnetic field.The effect is driven by intrinsic strong correlations, which polarize the electron system into a single spin and valley resolved moiré miniband with Chern number $C=1$. In contrast to extrinsic, magnetically doped systems, the measured transport energy gap $Δ/k_B\approx 27$~K is larger than the Curie temperature for magnetic ordering $T_C\approx 9$~K, and Hall quantization persists to temperatures of several Kelvin. Remarkably, we find that electrical currents as small as 1~nA can be used to controllably switch the magnetic order between states of opposite polarization, forming an electrically rewritable magnetic memory.