Source author record

Kyunghoon Lee

Kyunghoon Lee appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.other cond-mat.str-el

Catalog footprint

What is connected

8works

4topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2021arXiv

Correlation-Driven Electron-Hole Asymmetry in Graphene Field Effect Devices

Electron-hole asymmetry is a fundamental property in solids that can determine the nature of quantum phase transitions and the regime of operation for devices. The observation of electron-hole asymmetry in graphene and recently in the phase diagram of bilayer graphene has spurred interest into whether it stems from disorder or from fundamental interactions such as correlations. Here, we report an effective new way to access electron-hole asymmetry in 2D materials by directly measuring the quasiparticle self-energy in graphene/Boron Nitride field effect devices. As the chemical potential moves from the hole to the electron doped side, we see an increased strength of electronic correlations manifested by an increase in the band velocity and inverse quasiparticle lifetime. These results suggest that electronic correlations play an intrinsic role in driving electron hole asymmetry in graphene and provide a new insight for asymmetries in more strongly correlated materials.

preprint2020arXiv

High-Performance Atomically-Thin Room-Temperature NO2 Sensor

The development of room-temperature sensing devices for detecting small concentrations of molecular species is imperative for a wide range of low-power sensor applications. We demonstrate a room-temperature, highly sensitive, selective, and reversible chemical sensor based on a monolayer of the transition metal dichalcogenide Re0.5Nb0.5S2. The sensing device exhibits thickness dependent carrier type, and upon exposure to NO2 molecules, its electrical resistance considerably increases or decreases depending on the layer number. The sensor is selective to NO2 with only minimal response to other gases such as NH3, CH2O, and CO2. In the presence of humidity, not only are the sensing properties not deteriorated, but also the monolayer sensor shows complete reversibility with fast recovery at room temperature. We present a theoretical analysis of the sensing platform and identify the atomically-sensitive transduction mechanism.

preprint2019arXiv

Visualization of the flat electronic band in twisted bilayer graphene near the magic angle twist

Bilayer graphene was theorized to host a moire miniband with flat dispersion if the layers are stacked at specific twist angles known as the magic angles. Recently, such twisted bilayer graphene (tBLG) with the first magic angle twist was reported to exhibit correlated insulating state and superconductivity, where the presence of the flat miniband in the system is thought to be essential for the emergence of these ordered phases in the transport measurements. Tunneling spectroscopy and electronic compressibility measurements in tBLG have revealed a van Hove singularity that is consistent with the presence of the flat miniband. However, a direct observation of the flat dispersion in the momentum-space of such moire miniband in tBLG is still elusive. Here, we report the visualization of the flat moire miniband by using angle-resolved photoemission spectroscopy with nanoscale resolution (nanoARPES). The high spatial resolution in nanoARPES enabled the measurement of the local electronic structure of the tBLG. We clearly demonstrate the existence of the flat moire band near the charge neutrality for tBLG close to the magic angle at room temperature.

preprint2016arXiv

Evidence of electronic cloaking from chiral electron transport in bilayer graphene nanostructures

The coupling of charge carrier motion and pseudospin via chirality for massless Dirac fermions in monolayer graphene has generated dramatic consequences, such as the unusual quantum Hall effect and Klein tunneling. In bilayer graphene, charge carriers are massive Dirac fermions with a finite density of states at zero energy. Because of their non-relativistic nature, massive Dirac fermions can provide an even better test bed with which to clarify the importance of chirality in transport measurement than massless Dirac fermions in monolayer graphene. Here, we report an electronic cloaking effect as a manifestation of chirality by probing phase coherent transport in chemical-vapor-deposited bilayer graphene. Conductance oscillations with different periodicities were observed on extremely narrow bilayer graphene heterojunctions through electrostatic gating. Using a Fourier analysis technique, we identified the origin of each individual interference pattern. Importantly, the electron waves on the two sides of the potential barrier can be coupled through the evanescent waves inside the barrier, making the confined states underneath the barrier invisible to electrons. These findings provide direct evidence for the electronic cloaking effect and hold promise for the realization of pseudospintronics based on bilayer graphene.

preprint2012arXiv

Evidence for Extraction of Photoexcited Hot Carriers from Graphene

We report evidence of nonequilibrium hot carriers extraction from graphene by gate-dependent photocurrent study. Scanning photocurrent excited by femtosecond pulse laser shows unusual gate dependence compared with continuous wave (CW) laser excitation. Power dependence studies further confirm that the photocarriers extracted at the metal/graphene contact are nonequilibrium hot carriers. Hot carrier extraction is found to be most efficient near the Dirac point where carrier lifetime reaches maximum. These observations not only provide evidence of hot carrier extraction from graphene, but also open the door for graphene based hot carrier optoelectronics.

preprint2012arXiv

Flexible and Transparent All-Graphene Circuits for Quaternary Digital Modulations

In modern communication system, modulation is a key function that embeds the baseband signal (information) into a carrier wave so that it can be successfully broadcasted through a medium such as air or cables. A flexible signal modulation scheme is hence essential to wide range of applications based on flexible electronics. Here we report a fully bendable all-graphene modulator circuit with the capability to encode a carrier signal with quaternary digital information for the first time. By exploiting the ambipolarity and the nonlinearity in a graphene transistor, we demonstrated two types of quaternary modulation schemes: 4-ary amplitude-shift keying (4-ASK) and quadrature phase-shift keying (QPSK). Remarkably, 4-ASK and QPSK can be realized with just 1 and 2 all-graphene transistors, respectively, representing a drastic reduction in circuit complexity when compared with conventional digital modulators. In addition, the circuit is not only flexible but also highly transparent (~95% transmittance) owing to their all-graphene design with every component (channel, interconnects, load resistor, and source/drain/gate electrodes) fabricated from graphene films. Taken together, these results represent a significant step toward achieving a high speed communication system that can be monolithically integrated on a flexible and transparent platform.

preprint2011arXiv

Homogeneous bilayer graphene film based flexible transparent conductor

Graphene is considered a promising candidate to replace conventional transparent conductors due to its low opacity, high carrier mobility and flexible structure. Multi-layer graphene or stacked single layer graphenes have been investigated in the past but both have their drawbacks. The uniformity of multi-layer graphene is still questionable, and single layer graphene stacks require many transfer processes to achieve sufficiently low sheet resistance. In this work, bilayer graphene film grown with low pressure chemical vapor deposition was used as a transparent conductor for the first time. The technique was demonstrated to be highly efficient in fabricating a conductive and uniform transparent conductor compared to multi-layer or single layer graphene. Four transfers of bilayer graphene yielded a transparent conducting film with a sheet resistance of 180 Ω_{\square} at a transmittance of 83%. In addition, bilayer graphene films transferred onto plastic substrate showed remarkable robustness against bending, with sheet resistance change less than 15% at 2.14% strain, a 20-fold improvement over commercial indium oxide films.

preprint2010arXiv

Wafer Scale Homogeneous Bilayer Graphene Films by Chemical Vapor Deposition

The discovery of electric field induced bandgap opening in bilayer graphene opens new door for making semiconducting graphene without aggressive size scaling or using expensive substrates. However, bilayer graphene samples have been limited to um size scale thus far, and synthesis of wafer scale bilayer graphene posts tremendous challenge. Here we report homogeneous bilayer graphene films over at least 2 inch x 2 inch area, synthesized by chemical vapor deposition on copper foil and subsequently transferred to arbitrary substrates. The bilayer nature of graphene film is verified by Raman spectroscopy, atomic force microscopy (AFM), and transmission electron microscopy (TEM). Importantly, spatially resolved Raman spectroscopy confirms a bilayer coverage of over 99%. The homogeneity of the film is further supported by electrical transport measurements on dual-gate bilayer graphene transistors, in which bandgap opening is observed in 98% of the devices.