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Researcher profile

Zhaohui Zhong

Zhaohui Zhong contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.other

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Published work

9 published item(s)

preprint2012arXiv

Evidence for Extraction of Photoexcited Hot Carriers from Graphene

We report evidence of nonequilibrium hot carriers extraction from graphene by gate-dependent photocurrent study. Scanning photocurrent excited by femtosecond pulse laser shows unusual gate dependence compared with continuous wave (CW) laser excitation. Power dependence studies further confirm that the photocarriers extracted at the metal/graphene contact are nonequilibrium hot carriers. Hot carrier extraction is found to be most efficient near the Dirac point where carrier lifetime reaches maximum. These observations not only provide evidence of hot carrier extraction from graphene, but also open the door for graphene based hot carrier optoelectronics.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Flexible and Transparent All-Graphene Circuits for Quaternary Digital Modulations

In modern communication system, modulation is a key function that embeds the baseband signal (information) into a carrier wave so that it can be successfully broadcasted through a medium such as air or cables. A flexible signal modulation scheme is hence essential to wide range of applications based on flexible electronics. Here we report a fully bendable all-graphene modulator circuit with the capability to encode a carrier signal with quaternary digital information for the first time. By exploiting the ambipolarity and the nonlinearity in a graphene transistor, we demonstrated two types of quaternary modulation schemes: 4-ary amplitude-shift keying (4-ASK) and quadrature phase-shift keying (QPSK). Remarkably, 4-ASK and QPSK can be realized with just 1 and 2 all-graphene transistors, respectively, representing a drastic reduction in circuit complexity when compared with conventional digital modulators. In addition, the circuit is not only flexible but also highly transparent (~95% transmittance) owing to their all-graphene design with every component (channel, interconnects, load resistor, and source/drain/gate electrodes) fabricated from graphene films. Taken together, these results represent a significant step toward achieving a high speed communication system that can be monolithically integrated on a flexible and transparent platform.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Homogeneous bilayer graphene film based flexible transparent conductor

Graphene is considered a promising candidate to replace conventional transparent conductors due to its low opacity, high carrier mobility and flexible structure. Multi-layer graphene or stacked single layer graphenes have been investigated in the past but both have their drawbacks. The uniformity of multi-layer graphene is still questionable, and single layer graphene stacks require many transfer processes to achieve sufficiently low sheet resistance. In this work, bilayer graphene film grown with low pressure chemical vapor deposition was used as a transparent conductor for the first time. The technique was demonstrated to be highly efficient in fabricating a conductive and uniform transparent conductor compared to multi-layer or single layer graphene. Four transfers of bilayer graphene yielded a transparent conducting film with a sheet resistance of 180 Ω_{\square} at a transmittance of 83%. In addition, bilayer graphene films transferred onto plastic substrate showed remarkable robustness against bending, with sheet resistance change less than 15% at 2.14% strain, a 20-fold improvement over commercial indium oxide films.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Parametric amplification in single-walled carbon nanotube nanoelectromechanical resonators

The low quality factor (Q) of Single-walled carbon nanotube (SWNT) resonators has limited their sensitivity in sensing application. To this end, we employ the technique of parametric amplification by modulating the spring constant of SWNT resonators at twice the resonant frequency, and achieve 10 times Q enhancement. The highest Q obtained at room temperature is around ~700, which is 3-4 times better than previous Q record reported for doubly-clamped SWNT resonators. Furthermore, efficient parametric amplification is found to only occur in the catenary vibration regime. Our results open up the possibility to employ light-weight and high-Q carbon nanotube resonators in single molecule and atomic mass sensing.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Ultrafast photocurrent measurement of the escape time of electrons and holes from carbon nanotube PN junction photodiodes

Ultrafast photocurrent measurements are performed on individual carbon nanotube PN junction photodiodes. The photocurrent response to sub-picosecond pulses separated by a variable time delay Δt shows strong photocurrent suppression when two pulses overlap (Δt = 0). The picosecond-scale decay time of photocurrent suppression scales inversely with the applied bias VSD, and is twice as long for photon energy above the second subband E22 as compared to lower energy. The observed photocurrent behavior is well described by an escape time model that accounts for carrier effective mass.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

A Fully Tunable Single-Walled Carbon Nanotube Diode

We demonstrate a fully tunable diode structure utilizing a fully suspended single-walled carbon nanotube (SWNT). The diode's turn-on voltage under forward bias can be continuously tuned up to 4.3 V by controlling gate voltages, which is ~6 times the nanotube bandgap energy. Furthermore, the same device design can be configured into a backward diode by tuning the band-to-band tunneling current with gate voltages. A nanotube backward diode is demonstrated for the first time with nonlinearity exceeding the ideal diode. These results suggest that a tunable nanotube diode can be a unique building block for developing next generation programmable nanoelectronic logic and integrated circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Capacitive Spring Softening in Single-Walled Carbon Nanotube Nanoelectromechanical Resonators

We report the capacitive spring softening effect observed in single-walled carbon nanotube (SWNT) nanoelectromechanical (NEM) resonators. The nanotube resonators adopt dual-gate configuration with both bottom-gate and side-gate capable of tuning the resonance frequency through capacitive coupling. Interestingly, downward resonance frequency shifting is observed with increasing side-gate voltage, which can be attributed to the capacitive softening of spring constant. Furthermore, in-plane vibrational modes exhibit much stronger spring softening effect than out-of-plan modes. Our dual-gate design should enable the differentiation between these two types of vibrational modes, and open up new possibility for nonlinear operation of nanotube resonators.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Wafer Scale Homogeneous Bilayer Graphene Films by Chemical Vapor Deposition

The discovery of electric field induced bandgap opening in bilayer graphene opens new door for making semiconducting graphene without aggressive size scaling or using expensive substrates. However, bilayer graphene samples have been limited to um size scale thus far, and synthesis of wafer scale bilayer graphene posts tremendous challenge. Here we report homogeneous bilayer graphene films over at least 2 inch x 2 inch area, synthesized by chemical vapor deposition on copper foil and subsequently transferred to arbitrary substrates. The bilayer nature of graphene film is verified by Raman spectroscopy, atomic force microscopy (AFM), and transmission electron microscopy (TEM). Importantly, spatially resolved Raman spectroscopy confirms a bilayer coverage of over 99%. The homogeneity of the film is further supported by electrical transport measurements on dual-gate bilayer graphene transistors, in which bandgap opening is observed in 98% of the devices.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Coherent Single Charge Transport in Molecular-Scale Silicon Nanowire Transistors

We report low-temperature electrical transport studies of molecule-scale silicon nanowires. Individual nanowires exhibit well-defined Coulomb blockade oscillations characteristic of charge addition to a single nanostructure with length scales up to at least 400 nm. Further studies demonstrate coherent charge transport through discrete single particle quantum levels extending the whole device, and show that the ground state spin configuration follows the Lieb-Mattis theorem. In addition, depletion of the nanowires suggests that phase coherent single-dot characteristics are accessible in a regime where correlations are strong.

0 citations0 reviewsNo code linkedOpen access