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Kwang S. Kim

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Published work

11 published item(s)

preprint2021arXiv

Room temperature self-assembly of cation-free guanine quartet network nucleated from Mo-induced defect on decorated Au(111) with graphene nanoribbons

Guanine-quadruplex, consisting of several stacked guanine-quartets (GQs), has emerged as an important category of novel molecular targets with applications from nanoelectronic devices to anticancer drugs. Incorporation of metal cations into GQ structure is utilized to form stable G-quadruplexes, while no other passage has been reported yet. Here we report the room temperature (RT) molecular self-assembly of extensive metal-free GQ networks on Au(111) surface. Surface defect induced by an implanted molybdenum atom within Au(111) surface is used to nucleate and stabilize the cation-free GQ network. Additionally, the decorated Au(111) surface with 7-armchair graphene nanoribbons (7-AGNRs) results in more extensive GQ networks by curing the disordered phase nucleated from Au step edges spatially and chemically. Scanning tunneling microscopy/spectroscopy (STM/STS) and density functional theory (DFT) calculations confirm GQ networks' formation and unravel the nucleation and growth mechanism. This method stimulates cation-free G-quartet network formation at RT and can lead to stabilizing new emerging molecular self-assembly.

preprint2020arXiv

Gapless and Massive 1D Singlet Dispersion Channel in Infinite Spin-1/2 Ladders ---Infinite Quasi-1D Entanglement Perturbation Theory for Excitation

We solve for the elementary excitation in infinite quasi-1D quantum lattices by extending the recently developed infinite quasi-1D entanglement perturbation theory. The wave function of an excited state is variationally determined by optimizing superposition of cluster operation, each of which is composed of simultaneous on-site operation inside a block of lattice sites, on the ground state in a form of plane wave. The excitation energy with respect to the wave number gives the spectra for an elementary excitation. Our method is artificial broadening free and is adaptive for various quasi-particle pictures. Using the triplet spectrum, the application to $\infty$-by-$N$ antiferromagnetic spin-$\frac{1}{2}$ ladders for $N=2, 4, 6, 8$, and $10$ confirms a previous report that there is a quantum dimensional transition, namely, the lattice transits from quasi-1D to 2D at a finite critical value $N_c=10$. The massless triplet dispersion at $\left( π, π\right)$ sees a vanishing gap. Our results detect the anomaly at $\left(π,0\right)$ in the triplet spectrum, agreeing well with the inelastic neutron scattering measurement of a macroscopic sample. Surprisingly, our results also reveal a gapless and massive 1D singlet dispersion channel that is much lower than the triplet excitation. We note, however, the dimensional transition is determined by the massless triplet dispersion.

preprint2020arXiv

Liquid-liquid-like phase transitions between high, mid, and low density phases in confined water

Liquid-liquid phase transition (LLPT) in supercooled water has been a long-standing controversial issue. We show simulation results of real stable first-order phase transitions between high and low density liquid (HDL and LDL)-like structures in confined supercooled water in both positive and negative pressures. These topological phase transitions originate from H-bond network ordering in molecular rotational mode after molecular exchanges are frozen. It is explained by the order parameter-dependent free energy change upon mixing liquid-like and ice-like moieties of H-bond orientations which is governed by their two- to many-body interactions. This unexplored purely H-bond orientation-driven topological phase gives mid-density and stable intermediate mixed-phase with high and low density structures. The phase diagram of supercooled water demonstrate the second and third critical points of water.

preprint2016arXiv

Two-dimensional Excitonic Photoluminescence in Graphene on Cu surface

Despite having outstanding electrical properties, graphene is unsuitable for optical devices because of its zero band gap. Here, we report two-dimensional excitonic photoluminescence (PL) from graphene grown on Cu(111) surface, which shows an unexpected remarkably sharp and strong emission near 3.16 eV (full-width at half-maximum $\leq$ 3meV) and multiple emissions around 3.18 eV. As temperature increases, these emissions blue-shift, showing the characteristic negative thermal coefficient of graphene. Observed PLs originate from significantly suppressed dispersion of excited electrons in graphene caused by hybridization of graphene $π$ and Cu d orbitals of the 1st and 2nd Cu layers at a shifted saddle point 0.525(M+K) of Brillouin zone. This finding provides a new pathway to engineering novel optoelectronic graphene devices, whilst maintaining the outstanding electrical properties of graphene.

preprint2015arXiv

Proximity Effect Induced Electronic Properties of Epitaxial Graphene on Bi2Te2Se

We report that the π-electrons of graphene can be spin-polarized to create a phase with a significant spin-orbit gap at the Dirac point (DP) using a graphene-interfaced topological insulator hybrid material. We have grown epitaxial Bi2Te2Se (BTS) films on a chemical vapor deposition (CVD) graphene. We observe two linear surface bands both from the CVD graphene notably flattened and BTS coexisting with their DPs separated by 0.53 eV in the photoemission data measured with synchrotron photons. We further demonstrate that the separation between the two DPs, ΔD-D, can be artificially fine-tuned by adjusting the amount of Cs atoms adsorbed on the graphene to a value as small as ΔD-D = 0.12 eV to find any proximity effect induced by the DPs. Our density functional theory calculation shows a spin-orbit gap of ~20 meV in the π-band enhanced by three orders of magnitude from that of a pristine graphene, and a concomitant phase transition from a semi-metallic to a quantum spin Hall phase when ΔD-D $\leq$ 0.20 eV. We thus present a practical means of spin-polarizing the π-band of graphene, which can be pivotal to advance the graphene-based spintronics.

preprint2014arXiv

Persistent Topological Surface State at the Interface of Bi2Se3 Film Grown on Patterned Graphene

We employed graphene as a patternable template to protect the intrinsic surface states of thin films of topological insulators (TIs) from environment. Here we find that the graphene provides high-quality interface so that the Shubnikov de Haas (SdH) oscillation associated with a topological surface state could be observed at the interface of a metallic Bi2Se3 film with a carrier density higher than ~10^19 cm-3. Our in situ X-ray diffraction study shows that the Bi2Se3 film grows epitaxially in a quintuple layer-by-layer fashion from the bottom layer without any structural distortion by interfacial strain. The magnetotransport measurements including SdH oscillations stemming from multiple conductance channels reveal that the topological surface state, with the mobility as high as ~0.5 m^2/Vs, remains intact from the graphene underneath without degradation. Given that the graphene was prepatterned on arbitrary insulating substrates, the TI-based microelectronic design could be exploited. Our study thus provides a step forward to observe the topological surface states at the interface without degradation by tuning the interface between TI and graphene into a measurable current for device application.

preprint2012arXiv

Orbital selective Fermi surface shifts and mechanism of high T$_c$ superconductivity in correlated AFeAs (A=Li,Na)

Based on the dynamical mean field theory (DMFT) and angle resolved photoemission spectroscopy (ARPES), we have investigated the mechanism of high $T_c$ superconductivity in stoichiometric LiFeAs. The calculated spectrum is in excellent agreement with the observed ARPES measurement. The Fermi surface (FS) nesting, which is predicted in the conventional density functional theory method, is suppressed due to the orbital-dependent correlation effect with the DMFT method. We have shown that such marginal breakdown of the FS nesting is an essential condition to the spin-fluctuation mediated superconductivity, while the good FS nesting in NaFeAs induces a spin density wave ground state. Our results indicate that fully charge self-consistent description of the correlation effect is crucial in the description of the FS nesting-driven instabilities.

preprint2012arXiv

Uncertainties in Gapped Graphene

Motivated by graphene-based quantum computer we examine the time-dependence of the position-momentum and position-velocity uncertainties in the monolayer gapped graphene. The effect of the energy gap to the uncertainties is shown to appear via the Compton-like wavelength $λ_c$. The uncertainties in the graphene are mainly contributed by two phenomena, spreading and zitterbewegung. While the former determines the uncertainties in the long-range of time, the latter gives the highly oscillation to the uncertainties in the short-range of time. The uncertainties in the graphene are compared with the corresponding values for the usual free Hamiltonian $\hat{H}_{free} = (p_1^2 + p_2^2) / 2 M$. It is shown that the uncertainties can be under control within the quantum mechanical law if one can choose the gap parameter $λ_c$ freely.

preprint2011arXiv

High-resolution spatial mapping of the temperature distribution of a Joule self-heated graphene nanoribbon

We investigate the temperature distributions of Joule self-heated graphene nanoribbons (GNRs) with a spatial resolution finer than 100 nm by scanning thermal microscopy (SThM). The SThM probe is calibrated using the Raman G mode Stokes/anti-Stokes intensity ratio as a function of electric power applied to the GNR devices. From a spatial map of the temperature distribution, heat dissipation and transport pathways are investigated. By combining SThM and scanning gate microscopy data from a defected GNR, we observe hot spot formation at well-defined, localized sites.

preprint2010arXiv

30 inch Roll-Based Production of High-Quality Graphene Films for Flexible Transparent Electrodes

We report that 30-inch scale multiple roll-to-roll transfer and wet chemical doping considerably enhance the electrical properties of the graphene films grown on roll-type Cu substrates by chemical vapor deposition. The resulting graphene films shows a sheet resistance as low as ~30 Ohm/sq at ~90 % transparency which is superior to commercial transparent electrodes such as indium tin oxides (ITO). The monolayer of graphene shows sheet resistances as low as ~125 Ohm/sq with 97.4% optical transmittance and half-integer quantum Hall effect, indicating the high-quality of these graphene films. As a practical application, we also fabricated a touch screen panel device based on the graphene transparent electrodes, showing extraordinary mechanical and electrical performances.

preprint2009arXiv

Tuning the graphene work function by electric field effect

We report variation of the work function for single and bi-layer graphene devices measured by scanning Kelvin probe microscopy (SKPM). Using the electric field effect, the work function of graphene can be adjusted as the gate voltage tunes the Fermi level across the charge neutrality point. Upon biasing the device, the surface potential map obtained by SKPM provides a reliable way to measure the contact resistance of individual electrodes contacting graphene.