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Kunpeng Jia

Kunpeng Jia contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2022arXiv

Dissipative soliton generation and real-time dynamics in microresonator-filtered fiber lasers

Optical frequency combs in microresonators (microcombs) have a wide range of applications in science and technology, due to its compact size and access to considerably larger comb spacing. Despite recent successes, the problems of self-starting, high mode efficiency as well as high output power have not been fully addressed for conventional soliton microcombs. Recent demonstration of laser cavity soliton microcombs by nesting a microresonator into a fiber cavity, shows great potential to solve the problems. Here we comprehensively study the dissipative soliton generation and interaction dynamics in a microresonator-filtered fiber laser in both theory and experiment. We first bring theoretical insight into the mode-locking principle, discuss the parameters effect on soliton properties and provide experimental guidelines for broadband soliton generation. We predict chirped bright dissipative soliton with flat-top spectral envelope in microresonators with normal dispersion, which is fundamentally infeasible for externally driven case. Furthermore, we experimentally achieve soliton microcombs with large bandwidth of ~10 nm and high mode efficiency of 90.7%. Finally, by taking advantage of an ultrahigh-speed time magnifier, we study the real-time soliton formation and interaction dynamics and experimentally observe soliton Newton's cradle. Our study will benefit the design of the novel, high-efficiency and self-starting microcombs for real-world applications.

preprint2022arXiv

Noise-squeezed forward Brillouin lasers in multimode fiber microresonators

Stimulated Brillouin scattering (SBS) in low-power and compact microresonators has created a new field in cavity nonlinear photonics due to the marriage between acoustic and optical signal processing. Considering the fundamental differences between backward SBS and forward SBS processes, it is challenging to observe the coexistence of both processes in the same microresonator, as well as the photon noise suppression for the forward stimulated Brillouin laser (FSBL). In this paper, we demonstrate the first 20-dB-noise-squeezed FSBL generation excited by the coexisting backward SBL (BSBL) in an ultrahigh-quality-factor Fabry-Perot (FP) microresonator based on multimode fiber (MMF). Multiple FSBLs and BSBLs are cascaded by multiple intermodal SBS processes in the multimode microresonator, where the cascaded process between backward SBS and forward SBS process (pump-BSBL-FSBL) provides a route towards additional noise squeezing, rendering the FSBL phase noise to be -120 dBc/Hz at 1 MHz offset frequency. Furthermore, we demonstrate the first Brillouin-Kerr soliton from a high-order BSBL, which also coexists with FSBLs. Our experimental results show the potential of MMF FP microresonator as an ideal testbed for high-dimensional nonlinear cavity dynamics and laser source with ultrahigh coherence.

preprint2022arXiv

Turnkey photonic flywheel in a Chimera cavity

Dissipative Kerr soliton (DKS) microcomb has emerged as an enabling technology that revolutionizes a wide range of applications in both basic science and technological innovation. Reliable turnkey operation with sub-opticalcycle and sub-femtosecond timing jitter is key to the success of many intriguing microcomb applications at the intersection of ultrafast optics and microwave electronics. Here we propose a novel approach to demonstrate the first turnkey Brillouin-DKS frequency comb. Our approach with a Chimera cavity offers essential benefits that are not attainable previously, including phase insensitivity, self-healing capability, deterministic selection of DKS state, and access to the ultralow noise comb state. The demonstrated turnkey Brillouin-DKS frequency comb achieves a fundamental comb linewidth of 100 mHz and DKS timing jitter of 1 femtosecond for averaging times up to 56 μs. The approach is universal and generalizable to various device platforms for user-friendly and field-deployable comb devices.

preprint2020arXiv

A Study of Selectively Digital Etching Silicon-Germanium with Nitric and Hydrofluoric Acids

A digital etching method was proposed to achieve excellent control of etching depth. The digital etching characteristics of p+ Si and Si0.7Ge0.3 using the combinations of HNO3 oxidation and BOE oxide removal processes were studied. Experiments showed that oxidation saturates with time due to low activation energy. A physical model was presented to describe the wet oxidation process with nitric acid. The model was calibrated with experimental data and the oxidation saturation time, final oxide thickness, and selectivity between Si0.7Ge0.3 and p+ Si were obtained. The digital etch of laminated Si0.7Ge0.3/p+ Si was also investigated. The depth of the tunnels formed by etching SiGe layers between two Si layers was found in proportion to digital etching cycles. And oxidation would also saturate and the saturated relative etched amount per cycle (REPC) was 0.5 nm (4 monolayers). A corrected selectivity calculation formula was presented. The oxidation model was also calibrated with Si0.7Ge0.3/p+ Si stacks, and selectivity from model was the same with the corrected formula. The model can also be used to analyze process variations and repeatability. And it could act as a guidance for experiment design. Selectivity and repeatability should make a trade-off.

preprint2020arXiv

The Investigation of Negative Capacitance Vertical Nanowire FETs Based on SPICE Model at Device-Circuit Level

In this study, a SPICE model for negative capacitance vertical nanowire field-effect-transistor (NC VNW-FET) based on BSIM-CMG model and Landau-Khalatnikov (LK) equation was presented. Suffering from the limitation of short gate length there is lack of controllable and integrative structures for high performance NC VNW-FETs. A new kind of structure was proposed for NC VNW-FETs at sub-3nm node. Moreover, in order to understand and improve NC VNW-FETs, the S-shaped polarization-voltage curve (S-curve) was divided into four regions and some new design rules were proposed. By using the SPICE model, device-circuit co-optimization was implemented. The co-design of gate work function (WF) and NC was investigated. A ring oscillator was simulated to analyze the circuit energy-delay, and it shown that significant energy reduction, up to 88%, at iso-delay for NC VNW-FETs at low supply voltage can be achieved. This study gives a credible method to analysis the performance of NC based devices and circuits and reveals the potential of NC VNW-FETs in low-power applications.