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Kristiaan De Greve

Kristiaan De Greve contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2026arXiv

A current source with metrological precision made on a 300mm silicon MOS process

Although the measurement of current is now defined with respect to the electronic charge, producing a current standard based on a single-electron source remains challenging. The error rate of a source must be below 0.01 ppm, and many such sources must be operated in parallel to provide practically useful values of current in the nanoampere range. Achieving a single electron source using an industrial grade 300 mm wafer silicon metal oxide semiconductor (MOS) process could offer a powerful route for scaling, combined with the ability for integration with control and measurement electronics. Here, we present measurements of such a single-electron source indicating an error rate of 0.008 ppm, below the error threshold to satisfy the SI Ampere, and one of the lowest error rates reported, implemented using a gate-defined quantum dot device fabricated on an industry-grade silicon MOS process. Further evidence supporting the accuracy of the device is obtained by comparing the device performance to established models of quantum tunnelling, which reveal the mechanism of operation of our source at the single particle level. The low error rate observed in this device motivates the development of scaled arrays of parallel sources utilising Si MOS devices to realise a new generation of metrologically accurate current standards.

preprint2020arXiv

Wigner Crystals in Two-Dimensional Transition-Metal Dichalcogenides: Spin Physics and Readout

Wigner crystals are prime candidates for the realization of regular electron lattices under minimal requirements on external control and electronics. However, several technical challenges have prevented their detailed experimental investigation and applications to date. We propose an implementation of two-dimensional electron lattices for quantum simulation of Ising spin systems based on self-assembled Wigner crystals in transition-metal dichalcogenides. We show that these semiconductors allow for minimally invasive all-optical detection schemes of charge ordering and total spin. For incident light with optimally chosen beam parameters and polarization, we predict a strong dependence of the transmitted and reflected signals on the underlying lattice periodicity, thus revealing the charge order inherent in Wigner crystals. At the same time, the selection rules in transition-metal dichalcogenides provide direct access to the spin degree of freedom via Faraday rotation measurements.

preprint2019arXiv

Controlling excitons in an atomically thin membrane with a mirror

We demonstrate a new approach for dynamically manipulating the optical response of an atomically thin semiconductor, a monolayer of MoSe2, by suspending it over a metallic mirror. First, we show that suspended van der Waals heterostructures incorporating a MoSe2 monolayer host spatially homogeneous, lifetime-broadened excitons. Then, we interface this nearly ideal excitonic system with a metallic mirror and demonstrate control over the exciton-photon coupling. Specifically, by electromechanically changing the distance between the heterostructure and the mirror, thereby changing the local photonic density of states in a controllable and reversible fashion, we show that both the absorption and emission properties of the excitons can be dynamically modulated. This electromechanical control over exciton dynamics in a mechanically flexible, atomically thin semiconductor opens up new avenues in cavity quantum optomechanics, nonlinear quantum optics, and topological photonics.

preprint2019arXiv

Moiré Excitons Correlated with Superlattice Structure in Twisted WSe$_2$/WSe$_2$ Homobilayers

Moiré superlattices in twisted van der Waals materials constitute a promising platform for engineering electronic and optical properties. However, a major obstacle to fully understanding these systems and harnessing their potential is the limited ability to correlate the local moiré structure with optical properties. By using a recently developed scanning electron microscopy technique to image twisted WSe$_2$/WSe$_2$ bilayers, we directly correlate increasing moiré periodicity with the emergence of two distinct exciton species. These can be tuned individually through electrostatic gating, and feature different valley coherence properties. Our observations can be understood as resulting from an array of two intralayer exciton species residing in alternating locations in the superlattice, and illuminate the influence of the moiré potential on lateral exciton motion. They open up new avenues for controlling exciton arrays in twisted TMDs, with applications in quantum optoelectronics and explorations of novel many body systems.

preprint2018arXiv

Electrical control of interlayer exciton dynamics in atomically thin heterostructures

Excitons in semiconductors, bound pairs of excited electrons and holes, can form the basis for new classes of quantum optoelectronic devices. A van der Waals heterostructure built from atomically thin semiconducting transition metal dichalcogenides (TMDs) enables the formation of excitons from electrons and holes in distinct layers, producing interlayer excitons with large binding energy and a long lifetime. Employing heterostructures of monolayer TMDs, we realize optical and electrical generation of long-lived neutral and charged interlayer excitons. We demonstrate the transport of neutral interlayer excitons across the whole sample that can be controlled by excitation power and gate electrodes. We also realize the drift motion of charged interlayer excitons using Ohmic-contacted devices. The electrical generation and control of excitons provides a new route for realizing quantum manipulation of bosonic composite particles with complete electrical tunability.