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Kouichi Akahane

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Published work

2 published item(s)

preprint2014arXiv

Analysis of optical near-field energy transfer by stochastic model unifying architectural dependencies

We theoretically and experimentally demonstrate energy transfer mediated by optical near-field interactions in a multi-layer InAs quantum dot (QD) structure composed of a single layer of larger dots and N layers of smaller ones. We construct a stochastic model in which optical near-field interactions that follow a Yukawa potential, QD size fluctuations, and temperature-dependent energy level broadening are unified, enabling us to examine device-architecture-dependent energy transfer efficiencies. The model results are consistent with the experiments. This study provides an insight into optical energy transfer involving inherent disorders in materials and paves the way to systematic design principles of nanophotonic devices that will allow optimized performance and the realization of designated functions.

preprint2012arXiv

Telecommunication band InAs quantum dots and dashes embedded in different barrier materials

We investigate the long wavelength (1.2 to 1.55 micro-m) photoluminescence of high-density InAs quantum dots and dashes, which were grown on InP substrates. We analyze the temperature dependence of the recombination and carrier distribution on the alloy composition of the barrier materials, InGaAlAs, and on the existence of a wetting layer. Carrier escape and transfer are discussed based on temperature dependent photoluminescence measurements and theoretical considerations about the heterostructures' confinement energies and band structure. We propose two different contributions to the thermal quenching, which can explain the observations for both the quantum dot and dash samples. Among these one is a unique phenomenon for high density quantum dot/dash ensembles which is related to significant inter-dot/dash coupling. With the goal ahead to use these dots and dashes for quantum optical applications on the single-dot/dash level in the telecommunication C band as well as at elevated temperatures we present first steps towards the realization of such devices.