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Hirotaka Sasakura

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cond-mat.mes-hall cond-mat.supr-con

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preprint2020arXiv

Third Stable Branch and Tristability of Nuclear Spin Polarization in Single Quantum Dot System

Semiconductor quantum dots provide a spin-coupled system of an electron and nuclei via enhanced hyperfine interaction. We showed that the nuclear spin polarization in single quantum dots can have three stable branches under a longitudinal magnetic field. The states were accompanied by hysteresis loops around the boundaries of each branch with a change in the excitation condition. To explain these findings, we incorporated the electron spin relaxation caused by the nuclear spin fluctuation into the previously-studied dynamic nuclear spin polarization mechanism. The model reproduces the new features of nuclear spin polarization and the associated strong reduction in the observed electron spin polarization, and can refer to the tristability of nuclear spin polarization.

preprint2013arXiv

Carrier flow and nonequilibrium superconductivity in superconductor-based light-emitting diode

Superconductor-based light-emitting diode (superconductor-based LED) in strong light-confinement regime are characterized as a superconductor-based three-terminal device, and its transport properties are quantitatively investigated. In the gate-controlled region, we confirm the realization of new-type Josephson field effect transistor (JoFET) performance, where the channel cross-sectional area of the junction is directly modulated by the gate voltage. In the current-injected region, the superconducting critical current of $μ$A order in the Josephson junction is found to be modulated by the steady current injection of pA order. This ultrahigh monitoring sensitivity of the radiative recombination process can be explained by taking into account the fact that the energy relaxation of the absorbed photons causes the conversion of superconducting pairs to quasiparticles in the active layer. Using quasiparticle density and superconducting pair density, we discuss the carrier flows together with the non-equilibrium superconductovity in the active layer and the superconducting electrodes, which take place for compensating the conversion.

preprint2012arXiv

Telecommunication band InAs quantum dots and dashes embedded in different barrier materials

We investigate the long wavelength (1.2 to 1.55 micro-m) photoluminescence of high-density InAs quantum dots and dashes, which were grown on InP substrates. We analyze the temperature dependence of the recombination and carrier distribution on the alloy composition of the barrier materials, InGaAlAs, and on the existence of a wetting layer. Carrier escape and transfer are discussed based on temperature dependent photoluminescence measurements and theoretical considerations about the heterostructures' confinement energies and band structure. We propose two different contributions to the thermal quenching, which can explain the observations for both the quantum dot and dash samples. Among these one is a unique phenomenon for high density quantum dot/dash ensembles which is related to significant inter-dot/dash coupling. With the goal ahead to use these dots and dashes for quantum optical applications on the single-dot/dash level in the telecommunication C band as well as at elevated temperatures we present first steps towards the realization of such devices.