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Researcher profile

Kohei Yoshimatsu

Kohei Yoshimatsu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elphysics.app-ph

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Published work

3 published item(s)

preprint2022arXiv

Development of a versatile micro-focused angle-resolved photoemission spectroscopy system with Kirkpatrick-Baez mirror optics

Angle-resolved photoemission spectroscopy using a micro-focused beam spot (micro-ARPES) is becoming a powerful tool to elucidate key electronic states of exotic quantum materials. We have developed a versatile micro-ARPES system based on synchrotron radiation beam focused with a Kirkpatrick-Baez mirror optics. The mirrors are monolithically installed on a stage, which is driven with five-axes motion, and are vibrationally separated from the ARPES measurement system. Spatial mapping of the Auphotolithography pattern on Si signifies the beam spot size of 10 $μ$m (horizontal) x 12 $μ$m (vertical) at the sample position, which is well suited to resolve the fine structure in local electronic states. Utilization of the micro beam and the high precision sample motion system enables the accurate spatially resolved band-structure mapping, as demonstrated by the observation of a small band anomaly associated with tiny sample bending near the edge of a cleaved topological insulator single crystal.

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preprint2022arXiv

Electronic band structure of Ti2O3 thin films studied by angle-resolved photoemission spectroscopy

Ti2O3 exhibits a unique metal-insulator transition (MIT) at approximately 450 K over a wide temperature range of ~ 150 K. This broad MIT accompanied by lattice deformation differs from the sharp MITs observed in most other transition-metal oxides. A long-standing issue is determining the role of electron-electron correlation in the electronic structure and MIT of Ti2O3. However, the lack of information about the band structure of Ti2O3 has hindered investigating the origin of its unusual physical properties. Here, we report the electronic band structure of insulating Ti2O3 films with slight hole doping by angle-resolved photoemission spectroscopy (ARPES). ARPES showed clear band dispersion on the surface of single-crystalline epitaxial films. The experimentally obtained band structures were compared with band-structure calculation results based on density functional theory (DFT) with generalized gradient approximation + U correction. The obtained band structures are in good agreement with the DFT calculations at U = 2.2 eV, suggesting that electron-electron correlation plays an important role in the electronic structure of Ti2O3. Furthermore, the detailed analyses with varying U suggest that the origin of the characteristic MIT in Ti2O3 is a semimetal-semimetal or semimetal-semiconductor transition caused by changes in the Fermi surface due to lattice deformation.

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preprint2020arXiv

Temperature evolution of magnetic phases near the thickness-dependent metal-insulator transition in La$_{1-x}$Sr$_x$MnO$_3$ thin films observed by XMCD

Perovskite-type manganites, which are well-known for their intriguing physical properties such as colossal magnetoresistance (CMR) and half metalicity, have been considered as candidate materials for spintronics. However, their ferromagnetic (FM) properties are often suppressed in thin films when the thickness is reduced down to several monolayers (MLs). In order to investigate how the magnetic phases evolve near the paramagnetic (PM)-to-FM phase transition boundary, we have performed temperature-dependent x-ray magnetic circular dichroism (XMCD) experiments on a La$_{1-x}$Sr$_{x}$MnO$_3$ (LSMO, $x=0.4$) thin film, whose thickness (8 ML) is close to the boundary between the FM-metallic and the PM-insulating phases. By utilizing the element-selectiveness of XMCD, we have quantitatively estimated the fractions of the PM and superparamagnetic (SPM) phases as well as the FM one as a function of temperature. The results can be reasonably described based on a microscopic phase-separation model.

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