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Klaus Biermann

Klaus Biermann appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
physics.opticscond-mat.mtrl-sciphysics.app-phcond-mat.other

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Published work

7 published item(s)

preprint2022arXiv

GHz guided optomechanics in planar semiconductor microcavities

Hybrid opto, electro, and mechanical systems operating at several GHz offer extraordinary opportunities for the coherent control of opto-electronic excitations down to the quantum limit. We introduce here a monolithic platform for GHz semiconductor optomechanics based on electrically excited phonons guided along the spacer of a planar microcavity (MC) embedding quantum well (QW) emitters. The MC spacer bound by cleaved lateral facets acts as an embedded acoustic waveguide (WG) cavity with a high quality factor ($Q\sim10^5$) at frequencies well beyond 6~GHz, along which the acoustic modes live over tens of $μ$s. The strong acoustic fields and the enhanced optomechanical coupling mediated by electronic resonances induce a huge modulation of the energy (in the meV range) and strength (over 80\%) of the QW photoluminescence (PL), which, in turn, becomes a sensitive local phonon probe. Furthermore, we show the coherent coupling of acoustic modes at different sample depths, thus opening the way for phonon-mediated coherent control and interconnection of three-dimensional epitaxial nanostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Carrier diffusion in GaN -- a cathodoluminescence study. I: Temperature-dependent generation volume

The determination of the carrier diffusion length of semiconductors such as GaN and GaAs by cathodoluminescence imaging requires accurate knowledge about the spatial distribution of generated carriers. To obtain the lateral distribution of generated carriers for sample temperatures between 10 and 300 K, we utilize cathodoluminescence intensity profiles measured across single quantum wells embedded in thick GaN and GaAs layers. Thin (Al,Ga)N and (Al,Ga)As barriers, respectively, prevent carriers diffusing in the GaN and GaAs layers to reach the well, which would broaden the profiles. The experimental cathodoluminescence profiles are found to be systematically wider than the energy loss distributions calculated by means of the Monte Carlo program CASINO, with the width monotonically increasing with decreasing temperature. This effect is observed for both GaN and GaAs and becomes more pronounced for higher acceleration voltages. We discuss this phenomenon in terms of both, the electron-phonon interaction controlling the energy relaxation of hot carriers, and the shape of the initial carrier distribution. Finally, we present a phenomenological approach to simulate the carrier generation volume that can be used for the investigation of the temperature dependence of carrier diffusion.

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preprint2020arXiv

Dynamically Tuned Arrays of Polariton Parametric Oscillators

Optical parametric oscillations (OPOs) - a non-linear process involving the coherent coupling of an optically excited two particle pump state to a signal and an idler states with different energies - is a relevant mechanism for optical amplification as well as for the generation of correlated photons. OPOs require states with well-defined symmetries and energies: the fine-tuning of material properties and structural dimensions to create these states remains a challenge for the realization of scalable OPO-based functionalities in semiconductor nanostructures. Here, we demonstrate a pathway towards this goal based on the control of confined microcavity exciton-polaritons modulated by the spatially and time varying dynamical potentials produced by a surface acoustic waves (SAW). The exciton-polariton are confined in um-sized intra-cavity traps fabricated by structuring a planar semiconductor microcavity during the epitaxial growth process. OPOs in these structures benefit from the enhanced non-linearities of confined systems. We show that SAW fields induce state-dependent and time-varying energy shifts, which enable the energy alignment of the confined levels with the appropriate symmetry for OPO triggering. Furthermore, the dynamic acoustic tuning, which is fully described by a theoretical model for the modulation of the confined polaritons by the acoustic field, compensates for fluctuations in symmetry and dimensions of the confinement potential thus enabling a variety of dynamic OPO regimes. The robustness of the acoustic tuning is demonstrated by the synchronous excitation of an array of confined OPOs using a single acoustic beam, thus opening the way for the realization of scalable non-linear on-chip systems.

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preprint2014arXiv

Nonlinear frequency conversion using high quality modes in GaAs nanobeam cavities

We demonstrate the design, fabrication and characterization of nanobeam photonic crystal cavities in (111)-GaAs with multiple high quality factor modes, with large frequency separations (up to 740 nm in experiment, i.e., a factor of 1.5 and up to an octave in theory). Such structures are crucial for efficient implementation of nonlinear frequency conversion. Here, we employ them to demonstrate sum frequency generation from 1300 nm and 1950 nm to 780 nm. These wavelengths are particularly interesting for quantum frequency conversion between Si vacancy centers in diamond and the fiber optic network.

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preprint2014arXiv

Second harmonic generation in GaAs photonic crystal cavities in (111)B and (001) crystal orientations

We demonstrate second harmonic generation in photonic crystal cavities in (001) and (111)B oriented GaAs. The fundamental resonance is at 1800 nm, leading to second harmonic below the GaAs bandgap. Below-bandgap operation minimizes absorption of the second harmonic and two photon absorption of the pump. Photonic crystal cavities were fabricated in both orientations at various in-plane rotations of the GaAs substrate. The rotation dependence and farfield patterns of the second harmonic match simulation. We observe similar maximum efficiencies of 1.2 %/W in (001) and (111)B oriented GaAs.

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