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Kirill A. Cherednichenko

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cond-mat.mtrl-sci

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preprint2021arXiv

High-pressure synthesis of boron-rich chalcogenides B12S and B12Se

Two boron-rich chalcogenides B12S and B12Se isostructural to α-rhombohedral boron were synthesized by chemical reaction of the elements at high-pressure - high-temperature conditions. The crystal structures and stoichiometries of both compounds were confirmed by Rietveld refinement and elemental analysis. The experimental Raman spectra of B12S and B12Se were investigated for the first time. All observed Raman bands have been attributed to the theoretically calculated phonon modes, and the mode assignment has been performed.

preprint2019arXiv

Discovery of new boron-rich chalcogenides: orthorhombic B6X (X = S, Se)

New boron-rich sulfide B6S and selenide B6Se have been discovered from high pressure - high temperature synthesis combined with ab initio evolutionary crystal structure prediction, and studied by synchrotron X-ray diffraction and Raman spectroscopy at ambient conditions. As it follows from Rietveld refinement of powder X-ray diffraction data, both chalcogenides have orthorhombic symmetry and belongs to Pmna space group. All experimentally observed Raman bands have been attributed to the theoretically calculated phonon modes, and the mode assignment has been performed. Prediction of mechanical properties (hardness and elastic moduli) of new boron-rich chalcogenides have been made using ab initio routines, and both compounds were found to be members of a family of hard phases (Hv ~ 31 GPa).

preprint2016arXiv

Melting of B12P2 boron subphosphide under pressure

Melting of boron subphosphide (B12P2) to 26 GPa has been studied by in situ synchrotron X-ray powder diffraction in a laser-heated diamond anvil cell, and by quenching and electrical resistance measurements in a toroid-type high-pressure apparatus. B12P2 melts congruently, and the melting curve has a positive slope of 23(6) K/GPa. No solid-state phase transition was observed up to the melting in the whole pressure range under study.

preprint2016arXiv

Orthorhombic boron oxide under pressure: in situ study by X-ray diffraction and Raman scattering

High-pressure phase of boron oxide, orthorhombic \b{eta}-B2O3, has been studied in situ by synchrotron X-ray diffraction to 22 GPa and Raman scattering to 46 GPa at room temperature. The bulk modulus of \b{eta}-B2O3 has been found to be 169(3) GPa that is in good agreement with our ab initio calculations. Raman and IR spectra of \b{eta}-B2O3 have been measured at ambient pressure, all experimentally observed bands have been attributed to the theoretically calculated ones, and the mode assignment has been performed. Based on the data on Raman shift as a function of pressure, combined with equation-of-state data, the Grüneisen parameters of all experimentally observed Raman bands have been calculated. \b{eta}-B2O3 enriched by 10B isotope has been synthesized, and the effect of boron isotopic substitution on Raman spectra has been studied.

preprint2015arXiv

Phonon study of rhombohedral BS under high pressure

Raman spectra of rhombohedral boron monosulfide (r-BS) were measured under pressures up to 34 GPa at room temperature. No pressure-induced structural phase transition was observed, while strong pressure shift of Raman bands towards higher wavenumbers has been revealed. IR spectroscopy as a complementary technique has been used in order to completely describe the phonon modes of r-BS. All experimentally observed bands have been compared with theoretically calculated ones and modes assignment has been performed. r-BS enriched by 10B isotope was synthesized, and the effect of boron isotopic substitution on Raman spectra was observed and analyzed.