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Researcher profile

King Y. Fong

King Y. Fong contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.opticscond-mat.mes-hallquant-phcond-mat.mtrl-sci

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Published work

10 published item(s)

preprint2014arXiv

Cascaded optical transparency in multimode-cavity optomechanical systems

Electromagnetically induced transparency has great theoretical and experimental importance in many physics subjects, such as atomic physics, quantum optics, and more recent cavity optomechanics. Optical delay is the most prominent feature of electromagnetically induced transparency, and in cavity optomechanics optical delay is limited by mechanical dissipation rate of sideband-resolved mechanical modes. Here we demonstrate a cascaded optical transparency scheme by leveraging the parametric phonon-phonon coupling in a multimode optomechanical system, where a low damping mechanical mode in the unresolved-sideband regime is made to couple to an intermediate, high frequency mechanical mode in the resolved-sideband regime of an optical cavity. Extended optical delay and higher transmission, as well as optical advancing are demonstrated. These results provide a route to realize ultra-long optical delay, indicating a significant step toward integrated classical and quantum information storage devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Classical non-Gaussian state preparation through squeezing in an opto-electromechanical resonator

We demonstrate squeezing of a strongly interacting opto-electromechanical system using a parametric drive. By employing real-time feedback on the phase of the pump at twice the resonance frequency the thermo-mechanical noise is squeezed beyond the 3 dB instability limit. Surprisingly, this method can also be used to generate highly nonlinear states. We show that using the parametric drive with feedback on, classical number-like and cat-like states can be prepared. This presents a valuable electro-optomechanical state-preparation protocol that is extendable to the quantum regime.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Integrated GaN photonic circuits on silicon (100) for second harmonic generation

We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around 1560 nm and 780 nm, we achieve efficient, tunable second harmonic generation at 780 nm. The \{chi}(2) nonlinear susceptibility is measured to be as high as 16 plus minus 7 pm/V. Because GaN has a wideband transparency window covering ultraviolet, visible and infrared wavelengths, our platform provides a viable route for the on-chip generation of optical wavelengths in both the far infrared and near-UV through a combination of \{chi}(2) enabled sum-/difference-frequency processes.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

On-chip interaction-free measurements via the quantum Zeno effect

Although interference is a classical-wave phenomenon, the superposition principle, which underlies interference of individual particles, is at the heart of quantum physics. An interaction-free measurements (IFM) harnesses the wave-particle duality of single photons to sense the presence of an object via the modification of the interference pattern, which can be accomplished even if the photon and the object haven't interacted with each other. By using the quantum Zeno effect, the efficiency of an IFM can be made arbitrarily close to unity. Here we report an on-chip realization of the IFM based on silicon photonics. We exploit the inherent advantages of the lithographically written waveguides: excellent interferometric phase stability and mode matching, and obtain multipath interference with visibility above 98%. We achieved a normalized IFM efficiency up to 68.2%, which exceeds the 50% limit of the original IFM proposal.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electrical tuning and switching of an optical frequency comb generated in aluminum nitride microring resonators

Aluminum nitride has been shown to possess both strong Kerr nonlinearity and electro-optic Pockels effect. By combining these two effects, here we demonstrate on-chip reversible on/off switching of the optical frequency comb generated by an aluminum nitride microring resonator. We optimize the design of gating electrodes and the underneath resonator structure to effectively apply electric field without increasing the optical loss. The switching of the comb is monitored by measuring one of the frequency comb peaks while varying the electric field. The controlled comb electro-optic response is investigated for direct comparison with the transient thermal effect.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Optical frequency comb generation from aluminum nitride micro-ring resonator

Aluminum nitride is an appealing nonlinear optical material for on-chip wavelength conversion. Here we report optical frequency comb generation from high quality factor aluminum nitride micro-ring resonators integrated on silicon substrates. By engineering the waveguide structure to achieve near-zero dispersion at telecommunication wavelengths and optimizing the phase matching for four-wave mixing, frequency combs are generated with a single wavelength continuous-wave pump laser. The Kerr coefficient (n2) of aluminum nitride is further extracted from our experimental results.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Aluminum nitride as a new material for chip-scale optomechanics and nonlinear optics

Silicon photonics has offered a versatile platform for the recent development of integrated optomechanical circuits. However, silicon is limited to wavelengths above 1100 nm and does not allow device operation in the visible spectrum range where low noise lasers are conveniently available. The narrow band gap of silicon also makes silicon optomechanical devices susceptible to strong two-photon absorption and free carrier absorption, which often introduce strong thermal effect that limit the devices' stability and cooling performance. Further, silicon also does not provide the desired lowest order optical nonlinearity for interfacing with other active electrical components on a chip. On the other hand, aluminum nitride (AlN) is a wideband semiconductor widely used in micromechanical resonators due to its low mechanical loss and high electromechanical coupling strength. Here we report the development of AlN-on-silicon platform for low loss, wideband optical guiding, as well as its use for achieving simultaneous high optical quality and mechanical quality optomechanical devices. Exploiting AlN's inherent second order nonlinearity we further demonstrate electro-optic modulation and efficient second-harmonic generation in AlN photonic circuits. Our results suggest that low cost AlN-on-silicon photonic circuits are excellent substitutes for CMOS-compatible photonic circuits for building new functional optomechanical devices that are free from carrier effects.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Frequency and phase noise of ultra-high Q silicon nitride nanomechanical resonators

We describe the measurement and modeling of amplitude noise and phase noise in ultra-high Q nanomechanical resonators made from stoichiometric silicon nitride. With quality factors exceeding 2 million, the resonators' noise performance is studied with high precision. We find that the amplitude noise can be well described by the thermomechanical model, however, the resonators exhibit sizable extra phase noise due to their intrinsic frequency fluctuations. We develop a method to extract the resonator frequency fluctuation of a driven resonator and obtain a noise spectrum with dependence, which could be attributed to defect motion with broadly distributed relaxation times.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Integrated high frequency aluminum nitride optomechanical resonators

Aluminum nitride (AlN) has been widely used in microeletromechanical resonators for its excellent electromechanical properties. Here we demonstrate the use of AlN as an optomechanical material that simultaneously offer low optical and mechanical loss. Integrated AlN microring resonators in the shape of suspended rings exhibit high optical quality factor (Q) with loaded Q up to 125,000. Optomechanical transduction of the Brownian motion of a GHz contour mode yields a displacement sensitivity of 6.2\times10^(-18)m/Hz^(1/2) in ambient air.

0 citations0 reviewsNo code linkedOpen access