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Researcher profile

Kimberly A. Dick

Kimberly A. Dick contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallphysics.app-phquant-phcond-mat.mtrl-scicond-mat.stat-mechphysics.optics

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Published work

6 published item(s)

preprint2022arXiv

Efficient and Continuous Microwave Photodetection in Hybrid Cavity-Semiconductor Nanowire Double Quantum Dot Diodes

Single photon detectors are key for time-correlated photon counting applications [1] and enable a host of emerging optical quantum information technologies [2]. So far, the leading approach for continuous and efficient single-photon detection in the optical domain has been based on semiconductor photodiodes [3]. However, there is a paucity of efficient and continuous single-photon detectors in the microwave regime, because photon energies are four to five orders of magnitude lower therein and conventional photodiodes do not have that sensitivity. Here we tackle this gap and demonstrate how itinerant microwave photons can be efficiently and continuously converted to electrical current in a high-quality, semiconducting nanowire double quantum dot that is resonantly coupled to a cavity. In particular, in our detection scheme, an absorbed photon gives rise to a single electron tunneling event through the double dot, with a conversion efficiency reaching 6 %. Our results pave the way for photodiodes with single-shot microwave photon detection, at the theoretically predicted unit efficiency [4].

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Electronic band structure of narrow-bandgap p-n nanojunctions in heterostructured nanowires measured by electron energy loss spectroscopy

The electronic band structure of complex nanostructured semiconductors has a considerable effect on the final electronic and optical properties of the material and, ultimately, on the functionality of the devices incorporating them. Valence electron energy-loss spectroscopy (VEELS) in the transmission electron microscope (TEM) provides the possibility of measuring this property of semiconductors with high spatial resolution. However, it still represents a challenge for narrow-bandgap semiconductors, since an electron beam with low energy spread is required. Here we demonstrate that by means of monochromated VEELS we can study the electronic band structure of narrow-gap materials GaSb and InAs in the form of heterostructured nanowires, with bandgap values down to 0.5 eV, especially important for newly developed structures with unknown bandgaps. Using complex heterostructured InAs-GaSb nanowires, we determine a bandgap value of 0.54 eV for wurtzite InAs. Moreover, we directly compare the bandgaps of wurtzite and zinc-blende polytypes of GaSb in a single nanostructure, measured here as 0.84 and 0.75 eV, respectively. This allows us to solve an existing controversy in the band alignment between these structures arising from theoretical predictions. The findings demonstrate the potential of monochromated VEELS to provide a better understanding of the band alignment at the heterointerfaces of narrow-bandgap complex nanostructured materials with high spatial resolution. This is especially important for semiconductor device applications where even the slightest variations of the electronic band structure at the nanoscale can play a crucial role in their functionality.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Experimental verification of the work fluctuation-dissipation relation for information-to-work conversion

We study experimentally work fluctuations in a Szilard engine that extracts work from information encoded as the occupancy of an electron level in a semiconductor quantum dot. We show that as the average work extracted per bit of information increases towards the Landauer limit $k_BT \ln 2$, the work fluctuations decrease in accordance with the work fluctuation-dissipation relation. We compare the results to a protocol without measurement and feedback and show that when no information is used, the work output and fluctuations vanish simultaneously contrasting the information-to-energy conversion case where increasing amount of work is produced with decreasing fluctuations. Our work highlights the importance of fluctuations in the design of information-to-work conversion processes.

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preprint2020arXiv

Selective tuning of spin-orbital Kondo contributions in parallel-coupled quantum dots

We use co-tunneling spectroscopy to investigate spin-, orbital-, and spin-orbital Kondo transport in a strongly confined system of InAs double quantum dots (QDs) parallel-coupled to source and drain. In the one-electron transport regime, the higher symmetry spin-orbital Kondo effect manifests at orbital degeneracy and no external magnetic field. We then proceed to show that the individual Kondo contributions can be isolated and studied separately; either by orbital detuning in the case of spin-Kondo transport, or by spin splitting in the case of orbital Kondo transport. By varying the inter-dot tunnel coupling, we show that lifting of the spin degeneracy is key to confirming the presence of an orbital degeneracy, and to detecting a small orbital hybridization gap. Finally, in the two-electron regime, we show that the presence of a spin-triplet ground state results in spin-Kondo transport at zero magnetic field.

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preprint2019arXiv

Electrical control of spins and giant g-factors in ring-like coupled quantum dots

Emerging theoretical concepts for quantum technologies have driven a continuous search for structures where a quantum state, such as spin, can be manipulated efficiently. Central to many concepts is the ability to control a system by electric and magnetic fields, relying on strong spin-orbit interaction and a large g-factor. Here, we present a new mechanism for spin and orbital manipulation using small electric and magnetic fields. By hybridizing specific quantum dot states at two points inside InAs nanowires, nearly perfect quantum rings form. Large and highly anisotropic effective g-factors are observed, explained by a strong orbital contribution. Importantly, we find that the orbital and spin-orbital contributions can be efficiently quenched by simply detuning the individual quantum dot levels with an electric field. In this way, we demonstrate not only control of the effective g-factor from 80 to almost 0 for the same charge state, but also electrostatic change of the ground state spin.

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preprint2019arXiv

Independent control of nucleation and layer growth in nanowires

Control of the crystallization process is central to developing novel materials with atomic precision to meet the demands of electronic and quantum technology applications. Semiconductor nanowires grown by the vapor-liquid-solid process are a promising material system in which the ability to form components with structure and composition not achievable in bulk is well-established. Here we use in situ TEM imaging of GaAs nanowire growth to understand the processes by which the growth dynamics are connected to the experimental parameters. We find that two sequential steps in the crystallization process - nucleation and layer growth - can occur on similar time scales and can be controlled independently using different growth parameters. Importantly, the layer growth process contributes significantly to the growth time for all conditions, and will play a major role in determining material properties. The results are understood through theoretical simulations correlating the growth dynamics, liquid droplet and experimental parameters.

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