Source author record

Claes Thelander

Claes Thelander appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

9works
4topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

9 published item(s)

preprint2022arXiv

Efficient and Continuous Microwave Photodetection in Hybrid Cavity-Semiconductor Nanowire Double Quantum Dot Diodes

Single photon detectors are key for time-correlated photon counting applications [1] and enable a host of emerging optical quantum information technologies [2]. So far, the leading approach for continuous and efficient single-photon detection in the optical domain has been based on semiconductor photodiodes [3]. However, there is a paucity of efficient and continuous single-photon detectors in the microwave regime, because photon energies are four to five orders of magnitude lower therein and conventional photodiodes do not have that sensitivity. Here we tackle this gap and demonstrate how itinerant microwave photons can be efficiently and continuously converted to electrical current in a high-quality, semiconducting nanowire double quantum dot that is resonantly coupled to a cavity. In particular, in our detection scheme, an absorbed photon gives rise to a single electron tunneling event through the double dot, with a conversion efficiency reaching 6 %. Our results pave the way for photodiodes with single-shot microwave photon detection, at the theoretically predicted unit efficiency [4].

preprint2021arXiv

Experimental verification of the work fluctuation-dissipation relation for information-to-work conversion

We study experimentally work fluctuations in a Szilard engine that extracts work from information encoded as the occupancy of an electron level in a semiconductor quantum dot. We show that as the average work extracted per bit of information increases towards the Landauer limit $k_BT \ln 2$, the work fluctuations decrease in accordance with the work fluctuation-dissipation relation. We compare the results to a protocol without measurement and feedback and show that when no information is used, the work output and fluctuations vanish simultaneously contrasting the information-to-energy conversion case where increasing amount of work is produced with decreasing fluctuations. Our work highlights the importance of fluctuations in the design of information-to-work conversion processes.

preprint2020arXiv

Heat driven transport in serial double quantum dot devices

Studies of thermally induced transport in nanostructures provide access to an exciting regime where fluctuations are relevant, enabling the investigation of fundamental thermodynamic concepts and the realization of thermal energy harvesters. We study a serial double quantum dot formed in an InAs/InP nanowire coupled to two electron reservoirs. By means of a specially designed local metallic joule-heater, the temperature of the phonon bath in the vicinity of the double quantum dot can be enhanced. This results in phonon-assisted transport, enabling the conversion of local heat into electrical power in a nano-sized heat engine. Simultaneously, the electron temperatures of the reservoirs are affected, resulting in conventional thermoelectric transport. By detailed modelling and experimentally tuning the interdot coupling we disentangle both effects. Furthermore, we show that phonon-assisted transport gives access to the energy of excited states. Our findings demonstrate the versatility of our design to study fluctuations and fundamental nanothermodynamics.

preprint2020arXiv

Selective tuning of spin-orbital Kondo contributions in parallel-coupled quantum dots

We use co-tunneling spectroscopy to investigate spin-, orbital-, and spin-orbital Kondo transport in a strongly confined system of InAs double quantum dots (QDs) parallel-coupled to source and drain. In the one-electron transport regime, the higher symmetry spin-orbital Kondo effect manifests at orbital degeneracy and no external magnetic field. We then proceed to show that the individual Kondo contributions can be isolated and studied separately; either by orbital detuning in the case of spin-Kondo transport, or by spin splitting in the case of orbital Kondo transport. By varying the inter-dot tunnel coupling, we show that lifting of the spin degeneracy is key to confirming the presence of an orbital degeneracy, and to detecting a small orbital hybridization gap. Finally, in the two-electron regime, we show that the presence of a spin-triplet ground state results in spin-Kondo transport at zero magnetic field.

preprint2019arXiv

Electrical control of spins and giant g-factors in ring-like coupled quantum dots

Emerging theoretical concepts for quantum technologies have driven a continuous search for structures where a quantum state, such as spin, can be manipulated efficiently. Central to many concepts is the ability to control a system by electric and magnetic fields, relying on strong spin-orbit interaction and a large g-factor. Here, we present a new mechanism for spin and orbital manipulation using small electric and magnetic fields. By hybridizing specific quantum dot states at two points inside InAs nanowires, nearly perfect quantum rings form. Large and highly anisotropic effective g-factors are observed, explained by a strong orbital contribution. Importantly, we find that the orbital and spin-orbital contributions can be efficiently quenched by simply detuning the individual quantum dot levels with an electric field. In this way, we demonstrate not only control of the effective g-factor from 80 to almost 0 for the same charge state, but also electrostatic change of the ground state spin.

preprint2019arXiv

Imaging the Thermalization of Hot Carriers After Thermionic Emission Over a Polytype Barrier

The thermalization of non-equilibrium charge carriers is at the heart of thermoelectric energy conversion. In nanoscale systems, the equilibration length can be on the order of the system size, leading to a situation where thermoelectric effects need to be considered as spatially distributed, rather than localized at junctions. The energy exchange between charge carriers and phonons is of fundamental scientific and technological interest, but their assessment poses significant experimental challenges. We addressed these challenges by imaging the temperature change induced by Peltier effects in crystal phase engineered InAs nanowire (NW) devices. Using high-resolution scanning thermal microscopy (SThM), we have studied current-carrying InAs NWs, which feature a barrier segment of wurtzite (WZ) of varying length in a NW of otherwise zincblende (ZB) crystal phase. The energy barrier acts as a filter for electron transport around the Fermi energy, giving rise to a thermoelectric effect. We find that thermalization through electron-phonon heat exchange extends over the entire device. We analyze the temperature profile along a nanowire by comparing it to spatially dependent heat diffusion and electron thermalization models. We are able to extract the governing properties of the system, including the electron thermalization length of $223 \pm 9$\,nm, Peltier coefficient and Seebeck coefficient introduced by the barrier of $39 \pm 7$\,mV and $89 \pm 21$\,$μ$V/K, respectively, and a thermal conductivity along the wire axis of $8.9 \pm 0.5$\,W/m/K. Finally, we compare two ways to extract the elusive thermal boundary conductance between NW and underlying substrate.

preprint2016arXiv

Electron-hole interactions in coupled InAs-GaSb quantum dots based on nanowire crystal phase templates

We report growth and characterization of a coupled quantum dot structure that utilizes nanowire templates for selective epitaxy of radial heterostructures. The starting point is a zinc blende InAs nanowire with thin segments of wurtzite structure. These segments have dual roles: they act as tunnel barriers for electron transport in the InAs core, and they also locally suppress growth of a GaSb shell, resulting in coaxial InAs-GaSb quantum dots with integrated electrical probes. The parallel quantum dot structure hosts spatially separated electrons and holes that interact due to the type-II broken gap of InAs-GaSb heterojunctions. The Coulomb blockade in the electron and hole transport is studied, and periodic interactions of electrons and holes are observed and can be reproduced by modeling. Distorted Coulomb diamonds indicate voltage-induced ground-state transitions, possibly a result of changes in the spatial distribution of holes in the thin GaSb shell.

preprint2016arXiv

Single-electron transport in InAs nanowire quantum dots formed by crystal phase engineering

We report electrical characterization of quantum dots formed by introducing pairs of thin wurtzite (WZ) segments in zinc blende (ZB) InAs nanowires. Regular Coulomb oscillations are observed over a wide gate voltage span, indicating that WZ segments create significant barriers for electron transport. We find a direct correlation of transport properties with quantum dot length and corresponding growth time of the enclosed ZB segment. The correlation is made possible by using a method to extract lengths of nanowire crystal phase segments directly from scanning electron microscopy images, and with support from transmission electron microscope images of typical nanowires. From experiments on controlled filling of nearly empty dots with electrons, up to the point where Coulomb oscillations can no longer be resolved, we estimate a lower bound for the ZB-WZ conduction-band offset of 95 meV.

preprint2015arXiv

Transport studies of electron-hole and spin-orbit interaction in GaSb/InAsSb core-shell nanowire quantum dots

We report low-temperature transport studies of parallel double quantum dots formed in GaSb/InAsSb core-shell nanowires. At negative gate voltages, regular patterns of Coulomb diamonds are observed in the charge stability diagrams, which we ascribe to single-hole tunneling through a quantum dot in the GaSb core. As the gate voltage increases, the measured charge stability diagram indicates the appearance of an additional quantum dot, which we suggest is an electron quantum dot formed in the InAsSb shell. We find that an electron-hole interaction induces shifts of transport resonances in the source-drain voltage from which an average electron-hole interaction strength of 2.9 meV is extracted. We also carry out magnetotransport measurements of a hole quantum dot in the GaSb core and extract level-dependent g- factors and a spin-orbit interaction.