On-chip low-loss all-optical MoSe modulator
Monolayer transition metal dichalcogenides (TMDCs), like MoS, MoSe, WS, and WSe, feature direct bandgaps, strong spin-orbit coupling, and exciton-polariton interactions at the atomic scale, which could be harnessed for efficient light emission, valleytronics, and polaritonic lasing, respectively. Nevertheless, to build next-generation photonic devices that make use of these features, it is first essential to model the all-optical control mechanisms in TMDCs. Herein, a simple model is proposed to quantify the performance of a 35\textmu m long SiN waveguide-integrated all-optical MoSe modulator. Using this model, a switching energy of 14.6pJ is obtained for a transverse-magnetic (TM) and transverse-electric (TE) polarised pump signals at 480nm. Moreover, maximal extinction ratios of 20.6dB and 20.1dB are achieved for a TM and TE polarised probe signal at 500nm, respectively, with an ultra-low insertion loss of dB. Moreover, the device operates with an ultrafast recovery time of 50ps, while maintaining a high extinction ratio for practical applications. These findings facilitate modeling and designing novel TMDC-based photonic devices.