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Researcher profile

Kevin Luke

Kevin Luke contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.opticsquant-phphysics.app-ph

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Published work

7 published item(s)

preprint2020arXiv

Wafer-scale low-loss lithium niobate photonic integrated circuits

Thin-film lithium niobate (LN) photonic integrated circuits (PICs) could enable ultrahigh performance in electro-optic and nonlinear optical devices. To date, realizations have been limited to chip-scale proof-of-concepts. Here we demonstrate monolithic LN PICs fabricated on 4- and 6-inch wafers with deep ultraviolet lithography and show smooth and uniform etching, achieving 0.27 dB/cm optical propagation loss on wafer-scale. Our results show that LN PICs are fundamentally scalable and can be highly cost-effective.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Thermally Controlled Comb Generation and Soliton Modelocking in Microresonators

We report the first demonstration of thermally controlled soliton modelocked frequency comb generation in microresonators. By controlling the electric current through heaters integrated with silicon nitride microresonators, we demonstrate a systematic and repeatable pathway to single- and multi-soliton modelocked states without adjusting the pump laser wavelength. Such an approach could greatly simplify the generation of modelocked frequency combs and facilitate applications such as chip-based dual-comb spectroscopy.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

On-Chip Optical Squeezing

We present the first demonstration of all-optical squeezing in an on-chip monolithically integrated CMOS-compatible platform. Our device consists of a low loss silicon nitride microring optical parametric oscillator (OPO) with a gigahertz cavity linewidth. We measure 1.7 dB (5 dB corrected for losses) of sub-shot noise quantum correlations between bright twin beams generated in the microring four-wave-mixing OPO pumped above threshold. This experiment demonstrates a compact, robust, and scalable platform for quantum optics and quantum information experiments on-chip.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Silicon-Nitride Platform for Narrowband Entangled Photon Generation

CMOS-compatible photonic chips are highly desirable for real-world quantum optics devices due to their scalability, robustness, and integration with electronics. Despite impressive advances using Silicon nanostructures, challenges remain in reducing their linear and nonlinear losses and in creating narrowband photons necessary for interfacing with quantum memories. Here we demonstrate the potential of the silicon nitride (Si3N4) platform by realizing an ultracompact, bright, entangled photon-pair source with selectable photon bandwidths down to 30 MHz, which is unprecedented for an integrated source. Leveraging Si3N4's moderate thermal expansion, simple temperature control of the chip enables precise wavelength stabilization and tunability without active control. Single-mode photon pairs at 1550 nm are generated at rates exceeding 107 s-1 with mW's of pump power and are used to produce time-bin entanglement. Moreover, Si3N4 allows for operation from the visible to the mid-IR, which make it highly promising for a wide range of integrated quantum photonics applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Tunable frequency combs based on dual microring resonators

In order to achieve efficient parametric frequency comb generation in microresonators, external control of coupling between the cavity and the bus waveguide is necessary. However, for passive monolithically integrated structures, the coupling gap is fixed and cannot be externally controlled, making tuning the coupling inherently challenging. We design a dual-cavity coupled microresonator structure in which tuning one ring resonance frequency induces a change in the overall cavity coupling condition. We demonstrate wide extinction tunability with high efficiency by engineering the ring coupling conditions. Additionally, we note a distinct dispersion tunability resulting from coupling two cavities of slightly different path lengths, and present a new method of modal dispersion engineering. Our fabricated devices consist of two coupled high quality factor silicon nitride microresonators, where the extinction ratio of the resonances can be controlled using integrated microheaters. Using this extinction tunability, we optimize comb generation efficiency as well as provide tunability for avoiding higher-order mode-crossings, known for degrading comb generation. The device is able to provide a 110-fold improvement in the comb generation efficiency. Finally, we demonstrate open eye diagrams using low-noise phase-locked comb lines as a wavelength-division multiplexing channel.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Tunable Squeezing Using Coupled Ring Resonators on a Silicon Nitride Chip

We demonstrate continuous tuning of the squeezing level generated in a double-ring optical parametric oscillator by externally controlling the coupling condition using electrically controlled integrated microheaters. We accomplish this by utilizing the avoided crossing exhibited by a pair of coupled silicon nitride microring resonators. We directly detect a change in the squeezing level from 0.5 dB in the undercoupled regime to 2 dB in the overcoupled regime, which corresponds to a change in the generated on-chip squeezing factor from 0.9 dB to 3.9 dB. Such wide tunability in the squeezing level can be harnessed for on-chip quantum enhanced sensing protocols which require an optimal degree of squeezing.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Overcoming Si3N4 film stress limitations for High Quality factor ring resonators

Silicon nitride (Si3N4) ring resonators are critical for a variety of photonic devices. However the intrinsically high film stress of silicon nitride has limited both the optical confinement and quality factor (Q) of ring resonators. We show that stress in Si3N4 films can be overcome by introducing mechanical trenches for isolating photonic devices from propagating cracks. We demonstrate a Si3N4 ring resonator with an intrinsic quality factor of 7 million, corresponding to a propagation loss of 4.2 dB/m. This is the highest quality factor reported to date for high confinement Si3N4 ring resonators in the 1550 nm wavelength range.

0 citations0 reviewsNo code linkedOpen access