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Researcher profile

Ke-Ke Bai

Ke-Ke Bai contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

8 published item(s)

preprint2020arXiv

Breaking whispering-gallery modes of massless Dirac fermions in graphene quantum dots by Coulomb interaction

Coulomb interaction is of central importance in localized energy levels (bound states) or electronic flat bands and could result in many exotic quantum phases, such as magnetic, superconducting, and topological phases in graphene systems1-14. In graphene monolayer, the relativistic massless Dirac fermion nature of the charge carriers enables us to realize unprecedented quasibound states, which are trapped temporarily via whispering-gallery modes (WGMs) with the lifetime (trapping time) of ~ 10 fs, in circular graphene quantum dots (GQDs)15-20. Here we show that Coulomb interaction still plays a dominating role in determining the electronic properties of the temporarily-confined quasibound states. Our scanning tunneling microscopy (STM) and spectroscopy (STS) measurements demonstrate that the discrete quasibound state in a GQD will split into two peaks when it is partially filled. The energy separation of the two split peaks increases linear with inverse effective radius of the GQDs, indicating that the splitting arises from the Coulomb interaction. Moreover, we show that the real space distribution of the two split states separates in different regions of the GQD to reduce the Coulomb interaction, leading to the breaking of the WGM of the quasibound states.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Detecting giant electron-hole asymmetry in graphene monolayer generated by strain and charged-defect scattering via Landau level spectroscopy

The electron-hole symmetry in graphene monolayer, which is analogous to the inherent symmetric structure between electrons and positrons of the Universe, plays a crucial role in the chirality and chiral tunnelling of massless Dirac fermions. Here we demonstrate that both strain and charged-defect scattering could break this symmetry dramatically in graphene monolayer. In our experiment, the Fermi velocities of electrons and holes are measured directly through Landau level spectroscopy. In strained graphene with lattice deformation and curvature, the and are measured as 1.2 x 106 m/s and 1.02 x106 m/s, respectively. This giant asymmetry originates from enhanced next-nearest-neighbor hopping in the strained region. Around positively charged-defect, we observe opposite electron-hole asymmetry, and the and are measured to be 0.86x 106 m/s and 1.14 x106 m/s, respectively. Such a large asymmetry is attributed to the fact that the massless Dirac fermions in graphene monolayer are scattered more strongly when they are attracted to the charged-defect than when they are repelled from it.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Magnetic-field-assisted electron confinement and valley splitting in strained graphene

Spatially varying strained graphene can acquire interesting electronic properties because of the strain-induced valley-dependent gauge (pseudomagnetic) fields1,2. Here we report the realization of strained graphene regions located close to the step edges of Cu(111), obtained by using thermal strain engineering3,4. We study these strained structures with sub-nanometre-resolved scanning tunnelling microscopy and spectroscopy and identify their spatially modulated Dirac points, demonstrating the effect of overlap of Cu and graphene wave functions on the charge transfer between them5. By applying a magnetic field of 8 Tesla, electron confinement, as revealed by regularly spaced sharp resonances6,7, is observed in the strained graphene. In some regions of the strained graphene, repetitive pairs of resonance peaks appear in the tunnelling spectra. This provides direct and compelling evidence for lifting of valley degeneracy due to the coexistence of both the magnetic field and the pseudomagnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Observation of Valley-polarized Landau Levels in Strained Graphene

In strained graphene, lattice deformation can create pseudo-magnetic fields and result in zero-field Landau level-like quantization. In the presence of an external magnetic field, valley-polarized Landau levels are predicted to be observed because the pseudo-magnetic fields are of opposite directions in the K and K' valleys of graphene. Here, we present experimental spectroscopic measurements by scanning tunneling microscopy of strained graphene on Rh foil. We direct observed valley splitting of the Landau level induced by the coexistence of the pseudo-magnetic fields and external magnetic fields. The observed result paves the way to exploit novel electronic properties in graphene through the combination of the pseudo-magnetic fields and the external magnetic fields.

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preprint2014arXiv

Creating One-dimensional Nanoscale Periodic Ripples in a Continuous Mosaic Graphene Monolayer

In previous studies, it proved difficult to realize periodic graphene ripples with wavelengths of few nanometers. Here we show that one-dimensional periodic graphene ripples with wavelengths from 2 nm to tens of nanometers can be implemented in the intrinsic areas of a continuous mosaic, locally N-doped, graphene monolayer by simultaneously using both the thermal strain engineering and the anisotropic surface stress of Cu substrate. Our result indicates that the constraint imposed at the boundaries between the intrinsic and the N-doped regions play a vital role in creating these 1D ripples. We also demonstrate that the observed rippling modes are beyond the descriptions of continuum mechanics due to the decoupling of graphene bending and tensional deformations. Scanning tunneling spectroscopy measurements indicate that the nanorippling generates a periodic electronic superlattice and opens a zero-energy gap of about 130 meV in graphene. This result may pave a facile way for tailoring the structures and electronic properties of graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Direct Probing Stacking Order and Electronic Spectrum of Rhombohedral Trilayer Graphene with Scanning Tunneling Microscopy

Recently, the rhombohedral trilayer graphene (r-TLG) has attracted much attention because of its low-energy flat bands, which are predicted to result in many strongly correlated phenomena. Here, we demonstrate that it is possible to probe the stacking order and electronic spectrum of the r-TLG directly with a scanning tunneling microscopy around a monoatomic step edge of the top graphene layer. The tunneling spectra of the r-TLG exhibit four adjacent peaks, which are generated by the low-energy flat bands, flanking the charge neutrality point. Based on these spectra, the true energy gap and the energy gap at the K-point of the r-TLG are determined as about 9 meV and 23 meV, respectively. The observed features are well reproduced by a low-energy effective Hamiltonian.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electronic Structures of Graphene Layers on Metal Foil: Effect of Point Defects

Here we report a facile method to generate a high density of point defects in graphene on metal foil and show how the point defects affect the electronic structures of graphene layers. Our scanning tunneling microscopy (STM) measurements, complemented by first principle calculations, reveal that the point defects result in both the intervalley and intravalley scattering of graphene. The Fermi velocity is reduced in the vicinity area of the defect due to the enhanced scattering. Additionally, our analysis further points out that periodic point defects can tailor the electronic properties of graphene by introducing a significant bandgap, which opens an avenue towards all-graphene electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Experimental realization of single electron tunneling diode based on vertical graphene two-barrier junction

Usually, graphene is used in its horizontal directions to design novel concept devices. Here, we report a single electron tunneling diode based on quantum tunneling through a vertical graphene two-barrier junction. The junction is formed by positioning a scanning tunnelling microscopy (STM) tip above a graphene nanoribbon that was deposited on a graphite surface. Because of the asymmetry of the two-barrier junction, the electrons can unidirectional transfer from the tip to the graphene nanoribbon but not from the graphene to the tip. This result opens intriguing opportunities for designing new type of graphene transistors in its vertical direction.

0 citations0 reviewsNo code linkedOpen access