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Researcher profile

Jia-Cai Nie

Jia-Cai Nie contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.supr-conphysics.chem-ph

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Published work

28 published item(s)

preprint2015arXiv

Atomic resolution imaging of the two-component Dirac-Landau levels in a gapped graphene monolayer

The wavefunction of massless Dirac fermions is a two-component spinor. In graphene, a one-atom-thick film showing two-dimensional Dirac-like electronic excitations, the two-component representation reflects the amplitude of the electron wavefunction on the A and B sublattices. This unique property provides unprecedented opportunities to image the two components of massless Dirac fermions spatially. Here we report atomic resolution imaging of the two-component Dirac-Landau levels in a gapped graphene monolayer by scanning tunnelling microscopy and spectroscopy. A gap of about 20 meV, driven by inversion symmetry breaking by the substrate potential, is observed in the graphene on both SiC and graphite substrates. Such a gap splits the n = 0 Landau level (LL) into two levels, 0+ and 0-. We demonstrate that the amplitude of the wavefunction of the 0- LL is mainly at the A sites and that of the 0+ LL is mainly at the B sites of graphene, characterizing the internal structure of the spinor of the n = 0 LL. This provides direct evidence of the two-component nature of massless Dirac fermions.

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preprint2015arXiv

Detecting giant electron-hole asymmetry in graphene monolayer generated by strain and charged-defect scattering via Landau level spectroscopy

The electron-hole symmetry in graphene monolayer, which is analogous to the inherent symmetric structure between electrons and positrons of the Universe, plays a crucial role in the chirality and chiral tunnelling of massless Dirac fermions. Here we demonstrate that both strain and charged-defect scattering could break this symmetry dramatically in graphene monolayer. In our experiment, the Fermi velocities of electrons and holes are measured directly through Landau level spectroscopy. In strained graphene with lattice deformation and curvature, the and are measured as 1.2 x 106 m/s and 1.02 x106 m/s, respectively. This giant asymmetry originates from enhanced next-nearest-neighbor hopping in the strained region. Around positively charged-defect, we observe opposite electron-hole asymmetry, and the and are measured to be 0.86x 106 m/s and 1.14 x106 m/s, respectively. Such a large asymmetry is attributed to the fact that the massless Dirac fermions in graphene monolayer are scattered more strongly when they are attracted to the charged-defect than when they are repelled from it.

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preprint2015arXiv

Electronic Structures and Their Landau Quantizations in Twisted Graphene Bilayer and Trilayer

Electronic structures and their Landau quantizations in twisted graphene bilayer and trilayer are investigated using scanning tunnelling microscopy and spectroscopy. In the twisted trilayer, the top graphene layer and second layer are AB (Bernal) stacking and there is a stacking misorientation between the second layer and third layer. Both the twisted bilayer and trilayer exhibit two pronounced low-energy van Hove singularities (VHSs) in their spectra. Below the VHSs, the observed Landau level quantization in the twisted bilayer is identical to that of massless Dirac fermion in graphene monolayer. Our result demonstrates that both the VHSs and Fermi velocity of the twisted bilayer depends remarkably on the twist angle and the interlayer coupling strength. In the twisted trilayer, we directly observe Landau quantization of massive Dirac fermion with a sizable band gap 105 meV, which results in valley (layer) polarization of the lowest Landau levels. Such a result is similar to the expected Landau quantization in Bernal graphene bilayer with a moderate electric field.

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preprint2015arXiv

Landau Quantization and Fermi Velocity Renormalization in Twisted Graphene Bilayers

Currently there is a lively discussion concerning Fermi velocity renormalization in twisted bilayers and several contradicted experimental results are reported. Here we study electronic structures of the twisted bilayers by scanning tunneling microscopy (STM) and spectroscopy (STS). The interlayer coupling strengths between the adjacent bilayers are measured according to energy separations of two pronounced low-energy van Hove singularities (VHSs) in the STS spectra. We demonstrate that there is a large range of values for the interlayer interaction in different twisted bilayers. Below the VHSs, the observed Landau quantization in the twisted bilayers is identical to that of massless Dirac fermions in graphene monolayer, which allows us to measure the Fermi velocity directly. Our result indicates that the Fermi velocity of the twisted bilayers depends remarkably on both the twisted angles and the interlayer coupling strengths. This removes the discrepancy about the Fermi velocity renormalization in the twisted bilayers and provides a consistent interpretation of all current data.

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preprint2015arXiv

Landau Quantization in Graphene Monolayer, Bernal Bilayer, and Bernal Trilayer on Graphite Surface

Electronic properties of surface areas decoupled from graphite are studied using scanning tunnelling microscopy and spectroscopy. We show that it is possible to identify decoupled graphene monolayer, Bernal bilayer, and Bernal trilayer on graphite surface according to their tunnelling spectra in high magnetic field. The decoupled monolayer and bilayer exhibit Landau quantization of massless and massive Dirac fermions, respectively. The substrate generates a sizable band gap, ~35 meV, in the Bernal bilayer, therefore, the eightfold degenerate Landau level at the charge neutrality point is split into two valley-polarized quartets polarized on each layer. In the decoupled Bernal trilayer, we find that both massless and massive Dirac fermions coexist and its low-energy band structure can be described quite well by taking into account only the nearest-neighbor intra- and interlayer hopping parameters. A strong correlation between the Fermi velocity of the massless Dirac fermions and the effective mass of the massive Dirac fermions is observed in the trilayer. Our result demonstrates that the surface of graphite provides a natural ideal platform to probe the electronic spectra of graphene layers.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Magnetic-field-assisted electron confinement and valley splitting in strained graphene

Spatially varying strained graphene can acquire interesting electronic properties because of the strain-induced valley-dependent gauge (pseudomagnetic) fields1,2. Here we report the realization of strained graphene regions located close to the step edges of Cu(111), obtained by using thermal strain engineering3,4. We study these strained structures with sub-nanometre-resolved scanning tunnelling microscopy and spectroscopy and identify their spatially modulated Dirac points, demonstrating the effect of overlap of Cu and graphene wave functions on the charge transfer between them5. By applying a magnetic field of 8 Tesla, electron confinement, as revealed by regularly spaced sharp resonances6,7, is observed in the strained graphene. In some regions of the strained graphene, repetitive pairs of resonance peaks appear in the tunnelling spectra. This provides direct and compelling evidence for lifting of valley degeneracy due to the coexistence of both the magnetic field and the pseudomagnetic field.

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preprint2015arXiv

Spatially resolving unconventional interface Landau quantization in a graphene monolayer-bilayer planar junction

Graphene hybrid planar structures consisting of two regions with different quantum Hall (QH) states exhibit unusual transport properties1-5, originating from chiral edge states equilibration at the interface of the two different regions6. Here we present a sub-nanometre-resolved scanning tunnelling microscopy (STM) and spectroscopy (STS) study of a monolayer-bilayer graphene planar junction in the QH regime. The atomically well-defined interface of such a junction allows us to spatially resolve the interface electronic properties. Around the interface, we detect Landau quantization of massless Dirac fermions, as expected in graphene monolayer, below the charge neutrality point Nc of the junction, whereas unexpectedly, only Landau quantization of massive Dirac fermions, as expected in graphene bilayer, is observed above the Nc. The observed unconventional interface Landau quantization arises from the fact that the quantum conductance across the interface is solely determined by the minimum filling factors (number of edge modes) in the graphene monolayer and bilayer regions of the junction6,7.

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preprint2014arXiv

Angle-Dependent van Hove Singularities and Their Breakdown in Twisted Graphene Bilayers

The creation of van der Waals heterostructures based on a graphene monolayer and other two-dimensional crystals has attracted great interest because atomic registry of the two-dimensional crystals can modify the electronic spectra and properties of graphene. Twisted graphene bilayer can be viewed as a special van der Waals structure composed of two mutual misoriented graphene layers, where the sublayer graphene not only plays the role of a substrate, but also acts as an equivalent role as the top graphene layer in the structure. Here we report the electronic spectra of slightly twisted graphene bilayers studied by scanning tunneling microscopy and spectroscopy. Our experiment demonstrates that twist-induced van Hove singularities are ubiquitously present for rotation angles theta less than about 3.5o, corresponding to moiré-pattern periods D longer than 4 nm. However, they totally vanish for theta > 5.5o (D < 2.5 nm). Such a behavior indicates that the continuum models, which capture moiré-pattern periodicity more accurately at small rotation angles, are no longer applicable at large rotation angles.

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preprint2014arXiv

Creating One-dimensional Nanoscale Periodic Ripples in a Continuous Mosaic Graphene Monolayer

In previous studies, it proved difficult to realize periodic graphene ripples with wavelengths of few nanometers. Here we show that one-dimensional periodic graphene ripples with wavelengths from 2 nm to tens of nanometers can be implemented in the intrinsic areas of a continuous mosaic, locally N-doped, graphene monolayer by simultaneously using both the thermal strain engineering and the anisotropic surface stress of Cu substrate. Our result indicates that the constraint imposed at the boundaries between the intrinsic and the N-doped regions play a vital role in creating these 1D ripples. We also demonstrate that the observed rippling modes are beyond the descriptions of continuum mechanics due to the decoupling of graphene bending and tensional deformations. Scanning tunneling spectroscopy measurements indicate that the nanorippling generates a periodic electronic superlattice and opens a zero-energy gap of about 130 meV in graphene. This result may pave a facile way for tailoring the structures and electronic properties of graphene.

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preprint2014arXiv

Direct Probing Stacking Order and Electronic Spectrum of Rhombohedral Trilayer Graphene with Scanning Tunneling Microscopy

Recently, the rhombohedral trilayer graphene (r-TLG) has attracted much attention because of its low-energy flat bands, which are predicted to result in many strongly correlated phenomena. Here, we demonstrate that it is possible to probe the stacking order and electronic spectrum of the r-TLG directly with a scanning tunneling microscopy around a monoatomic step edge of the top graphene layer. The tunneling spectra of the r-TLG exhibit four adjacent peaks, which are generated by the low-energy flat bands, flanking the charge neutrality point. Based on these spectra, the true energy gap and the energy gap at the K-point of the r-TLG are determined as about 9 meV and 23 meV, respectively. The observed features are well reproduced by a low-energy effective Hamiltonian.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

The Tip-Induced Twisted Bilayer Graphene Superlattice on HOPG: Capillary Attraction Effect

We use the tip of the scanning tunneling microscope (STM) to manipulate single weakly bound nanometer-sized sheets on the the highly oriented pyrolytic graphite (HOPG) surface through artifically increasing the tip and sample interaction in humid environment. By this means it is possible to tear apart a graphite sheet againt a step and fold this part onto the HOPG surface and thus generate the gaphene superlattices with hexagonal symmetry. The tip and sample surface interactions, including the van der Waals force, eletrostatic force and capillary attraction force originating from the Laplace pressure due to the formation of a highly curved fluid meniscus connecting the tip and sample, are discussed in details to understand the fromation mechnism of graphen superlattice induced by the STM tip. Especially, the capillary force is the key role in manipulating the graphite surface sheet in the hunmidity condition. Our approach may provides a simple and feasible route to prepare the controllable superlattices and graphene nanoribbons but also replenish and find down the theory of generation of graphene superlattice on HOPG surface by the tip.

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preprint2014arXiv

Tuning Structures and Electronic Spectra of Graphene Layers by Tilt Grain Boundaries

Despite the structures and properties of tilt grain boundaries of graphite surface and graphene have been extensively studied, their effect on the structures and electronic spectra of graphene layers has not been fully addressed. Here we study effects of one-dimensional tilt grain boundaries on structures and electronic spectra of graphene multilayers by scanning tunneling microscopy and spectroscopy. A tilt grain boundary of a top graphene sheet in graphene multilayers leads to a twist between consecutive layers and generates superstructures (Moiré patterns) on one side of the boundary. Our results demonstrate that the twisting changes the electronic spectra of Bernal graphene bilayer and graphene trilayers dramatically. We also study quantum-confined twisted graphene bilayer generated between two adjacent tilt grain boundaries and find that the band structure of such a system is still valid even when the number of superstructures is reduced to two in one direction. It implies that the electronic structure of this system is driven by the physics of a single Moiré spot.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Two-dimensional superconductivity at (110) LaAlO3/SrTiO3 interfaces

Novel low dimensional quantum phenomena are expected at (110) LaAlO3/SrTiO3 (LAO/STO) interfaces after the quasi two dimensional electron gas similar to that of (001) LAO/STO interfaces was found [G. Herranz et al., Sci. Rep. 2, 758 (2012) and A. Annadi et al., Nat. Commun. 4, 1838 (2013)]. Here, two dimensional superconductivity of (110) LAO/STO samples with a superconducting transition temperature of 184 mK is demonstrated based on systematical transport measurements. The two dimensional characteristic of the superconductivity is confirmed by analyzing the Berezinskii-Kosterlitz-Thouless transition. The estimated superconductive thickness is about 18 nm. These features of superconductivity of (110) LAO/STO interfaces are comparable to those of (001) LAO/STO interfaces. This discovery may inspire a new round of upsurge on study of LAO/STO interfaces.

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preprint2014arXiv

Unveiling the Structural Origin of the High Carrier Mobility of a Molecular Monolayer on Boron Nitride

Very recently, it was demonstrated that the carrier mobility of a molecular monolayer dioctylbenzothienobenzothiophene (C8-BTBT) on boron nitride can reach 10 cm2/Vs, the highest among the previously reported monolayer molecular field-effect transistors. Here we show that the high-quality single crystal of the C8-BTBT monolayer may be the key origin of the record-high carrier mobility. We discover that the C8-BTBT molecules prefer layer-by-layer growth on both hexagonal boron nitride and graphene. The flatness of these substrates substantially decreases the C8-BTBT nucleation density and enables repeatable growth of large-area single crystal of the C8-BTBT monolayer. Our experimental result indicates that only out-of-plane roughness greater than 0.6 nm of the substrates could induce disturbance in the crystal growth and consequently affect the charge transport. This information would be important in guiding the growth of high-quality epitaxy molecular film.

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preprint2013arXiv

Electronic Structures of Graphene Layers on Metal Foil: Effect of Point Defects

Here we report a facile method to generate a high density of point defects in graphene on metal foil and show how the point defects affect the electronic structures of graphene layers. Our scanning tunneling microscopy (STM) measurements, complemented by first principle calculations, reveal that the point defects result in both the intervalley and intravalley scattering of graphene. The Fermi velocity is reduced in the vicinity area of the defect due to the enhanced scattering. Additionally, our analysis further points out that periodic point defects can tailor the electronic properties of graphene by introducing a significant bandgap, which opens an avenue towards all-graphene electronics.

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preprint2013arXiv

Hierarchy of Graphene Wrinkles Induced by Thermal Strain Engineering

Graphene is only one atom thick and becomes the ultimate thin film to explore membrane physics and mechanics. Here we study hierarchy of graphene wrinkles induced by thermal strain engineering and demonstrate that the wrinkling hierarchy can be accounted for by the wrinklon theory. We derive an equation λ = (ky)0.5 explaining evolution of wrinkling wavelength λ with the distance to the edge y observed in our experiment by considering both bending energy and stretching energy of the graphene flakes. The prefactor k in the equation is determined to be about 55 nm, which is independent of the size of the graphene flakes. Our experimental result indicates that the classical membrane behavior of graphene persists down to about 100 nm of the wrinkling wavelength.

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preprint2013arXiv

Strain Induced One-Dimensional Landau-Level Quantization in Corrugated Graphene

Theoretical research has predicted that ripples of graphene generates effective gauge field on its low energy electronic structure and could lead to zero-energy flat bands, which are the analog of Landau levels in real magnetic fields. Here we demonstrate, using a combination of scanning tunneling microscopy and tight-binding approximation, that the zero-energy Landau levels with vanishing Fermi velocities will form when the effective pseudomagnetic flux per ripple is larger than the flux quantum. Our analysis indicates that the effective gauge field of the ripples results in zero-energy flat bands in one direction but not in another. The Fermi velocities in the perpendicular direction of the ripples are not renormalized at all. The condition to generate the ripples is also discussed according to classical thin-film elasticity theory.

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preprint2013arXiv

Strain-induced Evolution of Electronic Band Structures in a Twisted Graphene Bilayer

Here we study the evolution of local electronic properties of a twisted graphene bilayer induced by a strain and a high curvature. The strain and curvature strongly affect the local band structures of the twisted graphene bilayer; the energy difference of the two low-energy van Hove singularities decreases with increasing the lattice deformations and the states condensed into well-defined pseudo-Landau levels, which mimic the quantization of massive Dirac fermions in a magnetic field of about 100 T, along a graphene wrinkle. The joint effect of strain and out-of-plane distortion in the graphene wrinkle also results in a valley polarization with a significant gap, i.e., the eight-fold degenerate Landau level at the charge neutrality point is splitted into two four-fold degenerate quartets polarized on each layer. These results suggest that strained graphene bilayer could be an ideal platform to realize the high-temperature zero-field quantum valley Hall effect.

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preprint2012arXiv

Angle Dependent Van Hove Singularities in Slightly Twisted Graphene Bilayer

Recent studies show that two low-energy Van Hove singularities (VHSs) seen as two pronounced peaks in the density of states (DOS) could be induced in twisted graphene bilayer. Here, we report angle dependent VHSs of slightly twisted graphene bilayer studied by scanning tunneling microscopy and spectroscopy. We show that energy difference of the two VHSs follows \DeltaEvhs ~ \hbarνF\DeltaK between 1.0^{\circ} and 3.0^{\circ} (here νF ~ 1.1\times106 m/s is the Fermi velocity of monolayer graphene, \DeltaK = 2Ksin(θ/2) is the shift between the corresponding Dirac points of the twisted graphene bilayer). This result indicates that the rotation angle between graphene sheets not results in significant reduction of the Fermi velocity, which quite differs from that predicted by band structure calculations. However, around a twisted angle θ~ 1.3^{\circ}, the observed \DeltaEvhs ~ 0.11 eV is much less than the expected value \hbarνF\DeltaK ~ 0.28 eV at 1.3^{\circ}. The origin of the reduction of \DeltaEvhs at 1.3^{\circ} is discussed.

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preprint2012arXiv

Controlling the Interlayer Coupling of Twisted Bilayer Graphene

The interlayer coupling of twisted bilayer graphene could markedly affect its electronic band structure. A current challenge required to overcome in experiment is how to precisely control the coupling and therefore tune the electronic properties of the bilayer graphene. Here, we describe a facile method to modulate the local interlayer coupling by adsorption of single molecule magnets onto the twisted bilayer graphene and report the characterization of its electronic band structure using scanning tunneling microscopy and spectroscopy. The low-energy Van Hove singularities (VHSs) and superlattice Dirac cones, induced by the interlayer coupling and graphene-on-graphene moiré respectively, are observed in the tunneling spectra. Our experiment demonstrates that the energy difference of the two VHSs, which reflects the magnitude of interlayer coupling, can be tuned by the local coverage density of adsorption.

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preprint2012arXiv

Enhanced Intervalley Scattering of Twisted Bilayer Graphene by Periodic AB Stacked Atoms

The electronic properties of twisted bilayer graphene on SiC substrate were studied via combination of transport measurements and scanning tunneling microscopy. We report the observation of enhanced intervalley scattering from one Dirac cone to the other, which contributes to weak localization, of the twisted bilayer graphene by increasing the interlayer coupling strength. Our experiment and analysis demonstrate that the enhanced intervalley scattering is closely related to the periodic AB stacked atoms (the A atom of layer 1 and the B atom of layer 2 that have the same horizontal positions) that break the sublattice degeneracy of graphene locally. We further show that these periodic AB stacked atoms affect intervalley but not intravalley scattering. The result reported here provides an effective way to atomically manipulate the intervalley scattering of graphene.

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preprint2012arXiv

Evidence for Superlattice Dirac Points and Space-dependent Fermi Velocity in Corrugated Graphene Monolayer

Recent studies show that periodic potentials can generate superlattice Dirac points at energies in graphene (is the Fermi velocity of graphene and G is the reciprocal superlattice vector). Here, we perform scanning tunneling microscopy and spectroscopy studies of a corrugated graphene monolayer on Rh foil. We show that the quasi-periodic ripples of nanometer wavelength in the corrugated graphene give rise to weak one-dimensional (1D) electronic potentials and thereby lead to the emergence of the superlattice Dirac points. The position of the superlattice Dirac point is space-dependent and shows a wide distribution of values. We demonstrated that the space-dependent superlattice Dirac points is closely related to the space-dependent Fermi velocity, which may arise from the effect of the local strain and the strong electron-electron interaction in the corrugated graphene.

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preprint2012arXiv

Experimental realization of single electron tunneling diode based on vertical graphene two-barrier junction

Usually, graphene is used in its horizontal directions to design novel concept devices. Here, we report a single electron tunneling diode based on quantum tunneling through a vertical graphene two-barrier junction. The junction is formed by positioning a scanning tunnelling microscopy (STM) tip above a graphene nanoribbon that was deposited on a graphite surface. Because of the asymmetry of the two-barrier junction, the electrons can unidirectional transfer from the tip to the graphene nanoribbon but not from the graphene to the tip. This result opens intriguing opportunities for designing new type of graphene transistors in its vertical direction.

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preprint2012arXiv

Flat Bands near Fermi Level of Topological Line Defects on Graphite

Flat bands play an important role in the study of strongly correlated phenomena, such as ferromagnetism, superconductivity, and fractional quantum Hall effect. Here we report direct experimental evidence for the presence of flat bands, close to the Fermi level, in one-dimensional topological defects on graphite seen as a pronounced peak in the tunnelling density of states. Our ab initio calculations indicate that the flat bands with vanishing Fermi velocity originate from sp2 dangling bonds (with antibonding nature) of undercoordinated carbon atoms at the edges of the defects. We further demonstrate that the presence of flat bands could be a universal behavior of 1D defects of graphene/graphite with undercoordinated carbon atoms at the edges of the defects.

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preprint2012arXiv

Single-layer behavior and slow carrier density dynamic of twisted graphene bilayer

We report scanning tunneling microscopy (STM) and spectroscopy (STS) of twisted graphene bilayer on SiC substrate. For twist angle ~ 4.5o the Dirac point ED is located about 0.40 eV below the Fermi level EF due to the electron doping at the graphene/SiC interface. We observed an unexpected result that the local Dirac point around a nanoscaled defect shifts towards the Fermi energy during the STS measurements (with a time scale about 100 seconds). This behavior was attributed to the decoupling between the twisted graphene and the substrate during the measurements, which lowers the carrier density of graphene simultaneously.

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preprint2011arXiv

Effect of Exchange-type Zero-bias Anomaly on Single Electron Tunnelling of Au Nanoparticles

Using cryogenic scanning tunnelling microscopy and scanning tunnelling spectroscopy we measured single electron tunnelling of isolated Au nanoparticles with 1.4 nm in radius. We observe that a gap ΔV ~ 2e/C (C is the capacitance of the Au particle) around zero bias in the tunnelling conductance spectrum, followed by a series of discrete single electron tunnelling peaks with voltage widths of EC ~ e/C at both negative and positive bias. Experimental data are well explained by taking into account the effect of exchange interaction of electrons on the single electron tunnelling of Au nanoparticles. A tunnelling peak near zero-bias was suppressed by the exchange-type zero-bias anomaly, which results in the gap ΔV ~ 2EC.

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preprint2011arXiv

Magnetic Core-Shell Structure and Proximity Effect in 7 nm Single-Crystal Co3O4 Nanowires

We present a study of magnetic properties of single-crystal Co3O4 nanowires with diameter about 7 nm. The nanowires expose (111) planes composed of plenty of Co3+ cations and exhibit two Néel temperatures at 56 K (TN of wire cores) and 73 K (TN of wire shells), which are far above TN = 40 K of bulk Co3O4. This novel bahavior is attributed to symmetry breaking of surface Co3+ cations and magnetic proximity effect. The nanowire shells show macroscopic residual magnetic moments. Cooling in a magnetic field, a fraction of the residual moments are tightly pinned to the antiferromagnetic lattice, which results in an obvious horizontal and vertical shift of hysteresis loop. Our experiment demonstrates that the exchange bias field HE and the pinned magnetic moments Mpin follow a simple expression HE = aMpin with a a constant.

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preprint2011arXiv

Observation of Landau level-like quantizations at 77 K along a strained-induced graphene ridge

Recent studies show that the electronic structures of graphene can be modified by strain and it was predicted that strain in graphene can induce peaks in the local density of states (LDOS) mimicking Landau levels (LLs) generated in the presence of a large magnetic field. Here we report scanning tunnelling spectroscopy (STS) observation of nine strain-induced peaks in LDOS at 77 K along a graphene ridge created when the graphene layer was cleaved from a sample of highly oriented pyrolytic graphite (HOPG). The energies of these peaks follow the progression of LLs of massless &#39;Dirac fermions&#39; (DFs) in a magnetic field of 230 T. The results presented here suggest a possible route to realize zero-field quantum Hall-like effects at 77 K.

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