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Kazunori Umeo

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Published work

3 published item(s)

preprint2020arXiv

Pressure induced quenching of planar rattling in Cu$_{10}$Zn$_{2}$Sb$_{4}$S$_{13}$ studied by specific-heat and x-ray diffraction measurements

We have studied the pressure effect on the rattling of tetrahedrite Cu$_{10}$Zn$_{2}$Sb$_{4}$S$_{13\,}$(CZSS) and type-I clathrate Ba$_{8}$Ga$_{16}$Sn$_{30\,}$(BGS) by specific heat and x-ray diffraction measurements. By applying pressure $P$, the rattling energy for CZSS initially decreases and steeply increases for $P$ $\textgreater$ $1$ GPa. By contrast, the energy for BGS increases monotonically with $P$ up to 6.5 GPa. An analysis of the pressure dependent specific heat and x-ray diffraction indicates that the out-of-plane rattling of the Cu atoms in the S$_{3}$ triangle of CZSS originates from the chemical pressure, unlike the rattling of the Ba ions among off-center sites in an oversized cage of BGS. The rattling in CZSS ceases upon further increasing $P$ above 2 GPa, suggesting that Cu atoms escape away from the S$_{3}$ triangle plane.

preprint2020arXiv

Simultaneous collapse of antiferroquadrupolar order and superconductivity in PrIr$_{2}$Zn$_{20}$ by nonhydrostatic pressure

Superconductivity in PrIr$_{2}$Zn$_{20}$ appears at $T_{\rm c} = 0.05$ K in the presence of an antiferroquadrupolar order below $T_{\rm Q} = 0.11$ K. We have studied pressure dependences of $T_{\rm c}$, $T_{\rm Q}$, and non-Fermi liquid behaviors in the resistivity $ρ(T)$ by using two pressure transmitting media: argon maintaining highly hydrostatic pressure, and glycerol, which solidifies above 5 GPa producing nonhydrostatic pressure. Upon applying $P$ with argon up to 10.6 GPa, $T_{\rm c}$ hardly changes, while $T_{\rm Q}$ monotonically increases from 0.11 to 0.23 K. With glycerol, however, $T_{\rm Q}$ and $T_{\rm c}$ simultaneously fall below 0.04 K at 6.3 GPa. The contrasting results indicate that onsite quadrupolar fluctuations induce superconductivity in this compound.

preprint2012arXiv

Ferromagnetic Instability in a Doped Band-Gap Semiconductor FeGa$_{3}$

We report the effects of electron doping on the ground state of a diamagnetic semiconductor FeGa$_{3}$ with a band gap of 0.5 eV. By means of electrical resistivity, magnetization and specific heat measurements we have found that gradual substitution of Ge for Ga in FeGa$_{3-y}$Ge$_{y}$ yields metallic conduction at a very small level of $y = 0.006$, then induces weak ferromagnetic (FM) order at $y = 0.13$ with a spontaneous moment of 0.1 $μ_{B}$/Fe and a Curie temperature $T_{C}= 3.3$ K, which continues increasing to $T_{C} = 75$ K as doping reaches $y = 0.41$. The emergence of the FM state is accompanied by quantum critical behavior as observed in the specific heat, $C/T \propto -$ln$T$, and in the magnetic susceptibility, $M/B \propto T^{-4/3}$. At $y= 0.09$, the specific heat divided by temperature $C/T$ reaches a large value of 70 mJ/K$^{2}$molFe, twice as large as that reported on FeSi$_{1-x}$Ge$_{x}$ for $x_{c}= 0.37$ and Fe$_{1-x}$Co$_{x}$Sb$_{2}$ for $x_{c}=0.3$ at their respective FM quantum critical points. The critical concentration $y_{c}=0.13$ in FeGa$_{3-y}$Ge$_{y}$ is quite small, despite the fact that its band gap is one order of magnitude larger than those in FeSi and FeSb$_{2}$. In contrast, no FM state emerges by substituting Co for Fe in Fe$_{1-x}$Co$_{x}$Ga$_{3}$ in the whole range $0 \leq x \leq 1$, although both types of substitution should dope electrons into FeGa$_{3}$. The FM instability found in FeGa$_{3-y}$Ge$_{y}$ indicates that strong electron correlations are induced by the disturbance of the Fe 3d - Ga 4p hybridization.