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Kazunori Umeo

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cond-mat.str-el cond-mat.mtrl-sci cond-mat.supr-con

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preprint2020arXiv

Pressure induced quenching of planar rattling in Cu $_{10}$ Zn $_{2}$ Sb $_{4}$ S $_{13}$ studied by specific-heat and x-ray diffraction measurements

We have studied the pressure effect on the rattling of tetrahedrite Cu $_{10}$ Zn $_{2}$ Sb $_{4}$ S $_{13\,}$ (CZSS) and type-I clathrate Ba $_{8}$ Ga $_{16}$ Sn $_{30\,}$ (BGS) by specific heat and x-ray diffraction measurements. By applying pressure $P$ , the rattling energy for CZSS initially decreases and steeply increases for $P$ $\textgreater$ $1$ GPa. By contrast, the energy for BGS increases monotonically with $P$ up to 6.5 GPa. An analysis of the pressure dependent specific heat and x-ray diffraction indicates that the out-of-plane rattling of the Cu atoms in the S $_{3}$ triangle of CZSS originates from the chemical pressure, unlike the rattling of the Ba ions among off-center sites in an oversized cage of BGS. The rattling in CZSS ceases upon further increasing $P$ above 2 GPa, suggesting that Cu atoms escape away from the S $_{3}$ triangle plane.

preprint2020arXiv

Simultaneous collapse of antiferroquadrupolar order and superconductivity in PrIr $_{2}$ Zn $_{20}$ by nonhydrostatic pressure

Superconductivity in PrIr $_{2}$ Zn $_{20}$ appears at $T_{\rm c} = 0.05$ K in the presence of an antiferroquadrupolar order below $T_{\rm Q} = 0.11$ K. We have studied pressure dependences of $T_{\rm c}$ , $T_{\rm Q}$ , and non-Fermi liquid behaviors in the resistivity $ρ(T)$ by using two pressure transmitting media: argon maintaining highly hydrostatic pressure, and glycerol, which solidifies above 5 GPa producing nonhydrostatic pressure. Upon applying $P$ with argon up to 10.6 GPa, $T_{\rm c}$ hardly changes, while $T_{\rm Q}$ monotonically increases from 0.11 to 0.23 K. With glycerol, however, $T_{\rm Q}$ and $T_{\rm c}$ simultaneously fall below 0.04 K at 6.3 GPa. The contrasting results indicate that onsite quadrupolar fluctuations induce superconductivity in this compound.

preprint2012arXiv

Ferromagnetic Instability in a Doped Band-Gap Semiconductor FeGa $_{3}$

We report the effects of electron doping on the ground state of a diamagnetic semiconductor FeGa $_{3}$ with a band gap of 0.5 eV. By means of electrical resistivity, magnetization and specific heat measurements we have found that gradual substitution of Ge for Ga in FeGa $_{3-y}$ Ge $_{y}$ yields metallic conduction at a very small level of $y = 0.006$ , then induces weak ferromagnetic (FM) order at $y = 0.13$ with a spontaneous moment of 0.1 $μ_{B}$ /Fe and a Curie temperature $T_{C}= 3.3$ K, which continues increasing to $T_{C} = 75$ K as doping reaches $y = 0.41$ . The emergence of the FM state is accompanied by quantum critical behavior as observed in the specific heat, $C/T \propto -$ ln $T$ , and in the magnetic susceptibility, $M/B \propto T^{-4/3}$ . At $y= 0.09$ , the specific heat divided by temperature $C/T$ reaches a large value of 70 mJ/K $^{2}$ molFe, twice as large as that reported on FeSi $_{1-x}$ Ge $_{x}$ for $x_{c}= 0.37$ and Fe $_{1-x}$ Co $_{x}$ Sb $_{2}$ for $x_{c}=0.3$ at their respective FM quantum critical points. The critical concentration $y_{c}=0.13$ in FeGa $_{3-y}$ Ge $_{y}$ is quite small, despite the fact that its band gap is one order of magnitude larger than those in FeSi and FeSb $_{2}$ . In contrast, no FM state emerges by substituting Co for Fe in Fe $_{1-x}$ Co $_{x}$ Ga $_{3}$ in the whole range $0 \leq x \leq 1$ , although both types of substitution should dope electrons into FeGa $_{3}$ . The FM instability found in FeGa $_{3-y}$ Ge $_{y}$ indicates that strong electron correlations are induced by the disturbance of the Fe 3d - Ga 4p hybridization.

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Kazunori Umeo

Research overview

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3 publications

Pressure induced quenching of planar rattling in Cu $_{10}$ Zn $_{2}$ Sb $_{4}$ S $_{13}$ studied by specific-heat and x-ray diffraction measurements

Simultaneous collapse of antiferroquadrupolar order and superconductivity in PrIr $_{2}$ Zn $_{20}$ by nonhydrostatic pressure

Ferromagnetic Instability in a Doped Band-Gap Semiconductor FeGa $_{3}$

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Kazunori Umeo

Research overview

Is this your work?

3 publications

Pressure induced quenching of planar rattling in Cu10_{10}10​Zn2_{2}2​Sb4_{4}4​S13_{13}13​ studied by specific-heat and x-ray diffraction measurements

Simultaneous collapse of antiferroquadrupolar order and superconductivity in PrIr2_{2}2​Zn20_{20}20​ by nonhydrostatic pressure

Ferromagnetic Instability in a Doped Band-Gap Semiconductor FeGa3_{3}3​

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Building this map preview

Pressure induced quenching of planar rattling in Cu $_{10}$ Zn $_{2}$ Sb $_{4}$ S $_{13}$ studied by specific-heat and x-ray diffraction measurements

Simultaneous collapse of antiferroquadrupolar order and superconductivity in PrIr $_{2}$ Zn $_{20}$ by nonhydrostatic pressure

Ferromagnetic Instability in a Doped Band-Gap Semiconductor FeGa $_{3}$