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Katsuhiko Nishiguchi

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Published work

3 published item(s)

preprint2025arXiv

Coulomb-mediated single-electron heat transfer statistics across capacitively coupled silicon nanodots

Heat transfer mediated by the Coulomb interaction reveals unconventional thermodynamic behavior and broadens thermodynamics research into fields such as quantum dynamics and information engineering. Although some experimental demonstrations of phenomena utilizing Coulomb-mediated heat transfer have been reported, estimations of their performance, such as efficiency, and their theoretical evaluations necessitate qualitative evaluation of the transfer mechanism itself, which remains challenging. We present an experiment investigating single-electron dynamics in two electrostatically coupled silicon nanodots to quantify Coulomb-mediated heat transfer at the nanoscale. By estimating the Coulomb interaction strength between the dots using the cross-correlation measurements of the single-electron dynamics, we convert the single-electron dynamics into the statistics of Coulomb-mediated heat transfer. Conducting the experiment at equilibrium enabled us to obtain a fluctuating net-zero heat transfer between the dots. These heat transfer statistics are essential for exploring device functionalities from the perspective of stochastic thermodynamics and for verifying universal relations in nonequilibrium states.

preprint2011arXiv

Evaluation of a gate capacitance in the sub-aF range for a chemical field-effect transistor with a silicon nanowire channel

An evaluation of the gate capacitance of a field-effect transitor (FET) whose channel length and width are several ten nanometer, is a key point for sensors applications. However, experimental and precise evaluation of capacitance in the aF range or less has been extremely difficult. Here, we report an extraction of the capacitance down to 0.55 aF for a silicon FET with a nanoscale wire channel whose width and length are 15 and 50 nm, respectively. The extraction can be achieved by using a combination of four kinds of measurements: current characteristics modulated by double gates, random-telegraph-signal noise induced by trapping and detrapping of a single electron, dielectric polarization noise, and current characteristics showing Coulomb blockade at low temperature. The extraction of such a small gate capacitance enables us to evaluate electron mobility in a nanoscale wire using a classical model of current characteristics of a FET.

preprint2010arXiv

Resonant escape over an oscillating barrier in single-electron ratchet transfer

Single-electron escape from a metastable state over an oscillating barrier is experimentally investigated in silicon-based ratchet transfer. When the barrier is oscillating on a time scale characteristic of the single-electron escape, synchronization occurs between the deterministic barrier modulation and the stochastic escape events. The average escape time as a function of its oscillation frequency exhibits a minimum providing a primary signature for resonant activation of single electrons.