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Kathleen A. Richardson

Kathleen A. Richardson contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2022arXiv

Electrical Programmable Multi-Level Non-volatile Photonic Random-Access Memory

Photonic Random-Access Memories (P-RAM) are an essential component for the on-chip non-von Neumann photonic computing by eliminating optoelectronic conversion losses in data links. Emerging Phase Change Materials (PCMs) have been showed multilevel memory capability, but demonstrations still yield relatively high optical loss and require cumbersome WRITE-ERASE approaches increasing power consumption and system package challenges. Here we demonstrate a multi-state electrically-programmed low-loss non-volatile photonic memory based on a broadband transparent phase change material (Ge2Sb2Se5, GSSe) with ultra-low absorption in the amorphous state. A zero-static-power and electrically-programmed multi-bit P-RAM is demonstrated on a silicon-on-insulator platform, featuring efficient amplitude modulation up to 0.2 dB/μm and an ultra-low insertion loss of total 0.12 dB for a 4-bit memory showing a 100x improved signal to loss ratio compared to other phase-change-materials based photonic memories. We further optimize the positioning of dual micro-heaters validating performance tradeoffs. Experimentally we demonstrate a half-a million cyclability test showcasing the robust approach of this material and device. Low-loss photonic retention-of-state adds a key feature for photonic functional and programmable circuits impacting many applications including neural networks, LiDAR, and sensors for example.

preprint2022arXiv

Ultra-compact nonvolatile phase shifter based on electrically reprogrammable transparent phase change materials

Energy-efficient programmable photonic integrated circuits (PICs) are the cornerstone of on-chip classical and quantum optical technologies. Optical phase shifters constitute the fundamental building blocks which enable these programmable PICs. Thus far, carrier modulation and thermo-optical effect are the chosen phenomena for ultrafast and low-loss phase shifters, respectively; however, the state and information they carry are lost once the power is turned off-they are volatile. The volatility not only compromises energy efficiency due to their demand for constant power supply, but also precludes them from emerging applications such as in-memory computing. To circumvent this limitation, we introduce a novel phase shifting mechanism that exploits the nonvolatile refractive index modulation upon structural phase transition of Sb$_{2}$Se$_{3}$, a bi-stable transparent phase change material. A zero-static power and electrically-driven phase shifter was realized on a foundry-processed silicon-on-insulator platform, featuring record phase modulation up to 0.09 $π$/$μ$m and a low insertion loss of 0.3 dB/$π$, which can be further improved upon streamlined design. We also pioneered a one-step partial amorphization scheme to enhance the speed and energy efficiency of PCM devices. A diverse cohort of programmable photonic devices were demonstrated based on the ultra-compact PCM phase shifter.

preprint2021arXiv

Deep Convolutional Neural Networks to Predict Mutual Coupling Effects in Metasurfaces

Metasurfaces have provided a novel and promising platform for the realization of compact and large-scale optical devices. The conventional metasurface design approach assumes periodic boundary conditions for each element, which is inaccurate in most cases since the near-field coupling effects between elements will change when surrounded by non-identical structures. In this paper, we propose a deep learning approach to predict the actual electromagnetic (EM) responses of each target meta-atom placed in a large array with near-field coupling effects taken into account. The predicting neural network takes the physical specifications of the target meta-atom and its neighbors as input, and calculates its phase and amplitude in milliseconds. This approach can be applied to explain metasurfaces' performance deterioration caused by mutual coupling and further used to optimize their efficiencies once combined with optimization algorithms. To demonstrate the efficacy of this methodology, we obtain large improvements in efficiency for a beam deflector and a metalens over the conventional design approach. Moreover, we show the correlations between a metasurface's performance and its design errors caused by mutual coupling are not bound to certain specifications (materials, shapes, etc.). As such, we envision that this approach can be readily applied to explore the mutual coupling effects and improve the performance of various metasurface designs.

preprint2021arXiv

Waveguide-Integrated Mid-Infrared Photodetection using Graphene on a Scalable Chalcogenide Glass Platform

The development of compact and fieldable mid-infrared (mid-IR) spectroscopy devices represents a critical challenge for distributed sensing with applications from gas leak detection to environmental monitoring. Recent work has focused on mid-IR photonic integrated circuit (PIC) sensing platforms and waveguide-integrated mid-IR light sources and detectors based on semiconductors such as PbTe, black phosphorus and tellurene. However, material bandgaps and reliance on SiO$_2$ substrates limit operation to wavelengths $λ\lesssim4\,μ\textrm{m}$. Here we overcome these challenges with a chalcogenide glass-on-CaF$_2$ PIC architecture incorporating split-gate photothermoelectric graphene photodetectors. Our design extends operation to $λ=5.2\,μ\textrm{m}$ with a Johnson noise-limited noise-equivalent power of $1.1\,\mathrm{nW}/\mathrm{Hz}^{1/2}$, no fall-off in photoresponse up to $f = 1\,\mathrm{MHz}$, and a predicted 3-dB bandwidth of $f_{3\textrm{dB}}>1\,\mathrm{GHz}$. This mid-IR PIC platform readily extends to longer wavelengths and opens the door to applications from distributed gas sensing and portable dual comb spectroscopy to weather-resilient free space optical communications.

preprint2020arXiv

A Freeform Dielectric Metasurface Modeling Approach Based on Deep Neural Networks

Metasurfaces have shown promising potentials in shaping optical wavefronts while remaining compact compared to bulky geometric optics devices. Design of meta-atoms, the fundamental building blocks of metasurfaces, relies on trial-and-error method to achieve target electromagnetic responses. This process includes the characterization of an enormous amount of different meta-atom designs with different physical and geometric parameters, which normally demands huge computational resources. In this paper, a deep learning-based metasurface/meta-atom modeling approach is introduced to significantly reduce the characterization time while maintaining accuracy. Based on a convolutional neural network (CNN) structure, the proposed deep learning network is able to model meta-atoms with free-form 2D patterns and different lattice sizes, material refractive indexes and thicknesses. Moreover, the presented approach features the capability to predict meta-atoms' wide spectrum responses in the timescale of milliseconds, which makes it attractive for applications such as fast meta-atom/metasurface on-demand designs and optimizations.

preprint2020arXiv

Multi-level Electro-thermal Switching of Optical Phase-Change Materials Using Graphene

Reconfigurable photonic systems featuring minimal power consumption are crucial for integrated optical devices in real-world technology. Current active devices available in foundries, however, use volatile methods to modulate light, requiring a constant supply of power and significant form factors. Essential aspects to overcoming these issues are the development of nonvolatile optical reconfiguration techniques which are compatible with on-chip integration with different photonic platforms and do not disrupt their optical performances. In this paper, a solution is demonstrated using an optoelectronic framework for nonvolatile tunable photonics that employs undoped-graphene microheaters to thermally and reversibly switch the optical phase-change material Ge$_2$Sb$_2$Se$_4$Te$_1$ (GSST). An in-situ Raman spectroscopy method is utilized to demonstrate, in real-time, reversible switching between four different levels of crystallinity. Moreover, a 3D computational model is developed to precisely interpret the switching characteristics, and to quantify the impact of current saturation on power dissipation, thermal diffusion, and switching speed. This model is used to inform the design of nonvolatile active photonic devices; namely, broadband Si$_3$N$_4$ integrated photonic circuits with small form-factor modulators and reconfigurable metasurfaces displaying 2$π$ phase coverage through neural-network-designed GSST meta-atoms. This framework will enable scalable, low-loss nonvolatile applications across a diverse range of photonics platforms.