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Researcher profile

Katarzyna Gas

Katarzyna Gas contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.othercond-mat.str-elcond-mat.supr-con

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Published work

5 published item(s)

preprint2025arXiv

Reliable Magnetometry for Antiferromagnets and Thin Films: Correcting Substrate Artifacts in Mn3Sn/MgO Systems

The rapid progress in antiferromagnetic and altermagnetic spintronics has led to increased interest in magnetic materials with vanishing net magnetization but strong spin-dependent transport properties. As thin films of such materials become central to device concepts, precise magnetic characterization is essential, for quantify intrinsic moments, and interpret transport signatures such as the anomalous Hall effect. In this work, we show that commercial MgO substrates, commonly used in epitaxial growth, often produce substantial parasitic magnetic signals that can match or exceed the response of weakly magnetic films. We identify two major components: a low-field ferromagnetic-like contribution originating from epi-ready surface, and a temperature-dependent paramagnetic background associated with dilute bulk impurities. These artifacts vary between samples and cannot be corrected using standard linear background subtraction or a measured reference substrate. To address this, we develop and put forward a compensation scheme which combines two complementary, non-destructive measurement protocols. We demonstrate up to 97% efficacy without requiring prior measurements of the bare substrate. The proposed framework enables reliable extraction of intrinsic magnetic signals and provides a general strategy for high-fidelity magnetometry in weakly magnetic thin-film systems, including emerging classes of materials such as topological phases and two-dimensional magnets. We also report the diamagnetic susceptibility of crystalline MgO, chi_MgO = -4.0 x 10^-7 emu/g/Oe.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

In Situ Compensation Method for Precise Integral SQUID Magnetometry of Miniscule Biological, Chemical, and Powder Specimens Requiring the Use of Capsules

Steadily growing interest in magnetic characterization of organic compounds for therapeutic purposes or of other irregularly shaped specimens calls for refinements of experimental methodology to satisfy experimental challenges. Encapsulation in capsules remains the method of choice, but its applicability in precise magnetometry is limited. This is particularly true for minute specimens in the single milligram range as they are outweighed by the capsules and are subject to large alignment errors. We present here a completely new experimental methodology that permits 30-fold in situ reduction of the signal of capsules by substantially restoring the symmetry of the sample holder that is otherwise broken by the presence of the capsule. In practical terms it means that the standard 30 mg capsule is seen by the magnetometer as approximately a 1 mg object, effectively opening the window for precise magnetometry of single milligram specimens. The method is shown to work down to 1.8 K and in the whole range of the magnetic fields. The method is demonstrated and validated using the reciprocal space option of MPMS-SQUID magnetometers; however, it can be easily incorporated in any magnetometer that can accommodate straw sample holders (i.e., the VSM-SQUID). Importantly, the improved sensitivity is accomplished relying only on the standard accessories and data reduction method provided by the SQUID manufacturer, eliminating the need for elaborate raw data manipulations.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Anomalous Hall Effect in Bismuth

We report the occurrence of ferromagnetic-like anomalous Hall effect (AHE) below $30$ mT in bismuth single and policrystals. The signatures of ferromagnetism in transport are not corroborated in magnetization measurements, thus suggesting the induction of non-intrinsic magnetism at surfaces and grain boundaries in bismuth. The suppression of the AHE with the increase of magnetic field and temperature coincides with previous reports of superconductivity in Bi, suggesting an interplay between the two phenomena.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Improved-Sensitivity Integral SQUID Magnetometry of (Ga,Mn)N Thin Films in Proximity to Mg-doped GaN

Nominally 45 nm GaN:Mg/ 5 nm (Ga,Mn)N / 45 nm GaN:Mg trilayers structures prepared by molecular beam epitaxy on GaN-buffered Al2O3 substrates are investigated to verify whether the indirect co-doping by holes from the cladding layers can alter the spin-spin interaction in (Ga,Mn)N. The four investigated structures, differing with the Mg doping level, are carefully characterized at the nanoscale by HRTEM, EDX, and by SIMS. HRTEM decisively excluded a presence of foreign Mn-rich phases. The structures, up to medium Mg doping, show no Mg over-doping effects. Magnetic studies of these structures are aided by the employment of a dedicated experimental approach of the in situ compensation of the magnetic contribution from the substrate, allowing up to about fifty-fold reduction of this contribution. This technique, dedicated to these structures, simultaneously provides a tenfold reduction of temporal instabilities of the magnetometric unit and lowers the experimental jitter to merely $5 \times 10^{-7}$~emu at 70~kOe, vastly increasing the precision and the credibility of the results of the standard integral SQUID magnetometry in high magnetic fields. The magnetic characteristics of the trilayers structures established here prove identical with the already known properties of the thick (Ga,Mn)N single layers, namely (i) the low temperature ferromagnetism among Mn$^{3+}$ ions driven by superexchange and (ii) purely paramagnetic response at higher temperatures. The possible cause of the lack of any effects brought about by the adjacent Mg-doping is a presence of residual Mn in the cladding layers, resulting in the deactivation of the p-type doping intended there. This finding points out that a more intensive technological effort has to be exerted to promote the co-doping-driven carrier-mediated ferromagnetic coupling in Mn-enriched GaN, especially at elevated temperatures.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Molecular beam epitaxy of the half-Heusler antiferromagnet CuMnSb

We report growth of CuMnSb thin films by molecular beam epitaxy on InAs(001) substrates. The CuMnSb layers are compressively strained ($0.6~\text{%}$) due to lattice mismatch. The thin films have a $ω$ full width half max of $7.7^{''}$ according to high resolution X-ray diffraction, and a root mean square roughness of $0.14~\text{nm}$ as determined by atomic force microscopy. Magnetic and electrical properties are found to be consistent with reported values from bulk samples. We find a Néel temperature of $62~\text{K}$, a Curie-Weiss temperature of $-65~\text{K}$ and an effective moment of $5.9~μ_{\text{B}}/\text{f.u.}$. Transport measurements confirm the antiferromagetic transition and show a residual resistivity at $4~\text{K}$ of $35~μΩ\cdot \text{cm}$.

0 citations0 reviewsNo code linkedOpen access