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Karlheinz Schwarz

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cond-mat.mtrl-scicond-mat.supr-con

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4 publications

preprint2020arXiv

Shortcomings of meta-GGA functionals when describing magnetism

Several recent studies have shown that SCAN, a functional belonging to the meta-generalized gradient approximation (MGGA) family, leads to significantly overestimated magnetic moments in itinerant ferromagnetic metals. However, this behavior is not inherent to the MGGA level of approximation since TPSS, for instance, does not lead to such severe overestimations. In order to provide a broader view of the accuracy of MGGA functionals for magnetism, we extend the assessment to more functionals, but also to antiferromagnetic solids. The results show that to describe magnetism there is overall no real advantage in using a MGGA functional compared to GGAs. For both types of approximation, an improvement in ferromagnetic metals is necessarily accompanied by a deterioration (underestimation) in antiferromagnetic insulators, and vice-versa. We also provide some analysis in order to understand in more detail the relation between the mathematical form of the functionals and the results.

Open access
preprint2014arXiv

Quantum oscillations of the superconductor LaRu2_2P2_2 : comparable mass enhancement λ≈1λ\approx 1 in Ru and Fe phosphides

We have studied the angular dependent de Haas-van Alphen oscillations of LaRu2_2P2_2 using magnetic torque in pulsed magnetic fields up to 60T. The observed oscillation frequencies are in excellent agreement with the geometry of the calculated Fermi surface. The temperature dependence of the oscillation amplitudes reveals effective masses m*(αα)=0.71 and m*(ββ)=0.99 me_e, which are enhanced over the calculated band mass by λcycλ^{cyc} of 0.8. We find a similar enhancement λγ≈1λ^γ \approx 1 in comparing the measured electronic specific heat (γ=11.5γ= 11.5 mJ/mol K2^2) with the total DOS from band structure calculations. Remarkably, very similar mass enhancements have been reported in other pnictides LaFe2_2P2_2, LaFePO (Tc≈4KT_c \approx 4K), and LaRuPO, independent of whether they are superconducting or not. This is contrary to the common perceptions that the normal state quasi-particle renormalizations reflect the strength of the superconducting paring mechanism and leads to new questions about pairing in isostructural and isoelectronic Ru- and Fe-pnictide superconductors.

Open access
preprint2013arXiv

High-pressure cupric oxide: a room-temperature multiferroic

Multiferroic materials, in which ferroelectric and magnetic ordering coexist, are of fundamental interest for the development of multi-state memory devices that allow for electrical writing and non-destructive magnetic read-out operation. The great challenge is to create multiferroic materials that operate at room-temperature and have a large ferroelectric polarization P. Cupric oxide, CuO, is promising because of its large P ~ 10^{2} μC.m^{-2}, but is unfortunately only multiferroic in a temperature range of 20 K, from 210 to 230 K. Here, using a combination of density functional theory and Monte Carlo calculations, we establish that pressure-driven phase competition induces a giant stabilization of the multiferroic phase of CuO, which at 20-40 GPa becomes stable in a domain larger than 300 K, from 0 to T > 300 K. Thus, under high-pressure, CuO is predicted to be a room-temperature multiferroic with large polarization.

Open access
preprint2005arXiv

Structural and Electronic Properties of the Interface between the High-k oxide LaAlO3 and Si(001)

The structural and electronic properties of the LaAlO3/Si(001) interface are determined using state-of-the-art electronic structure calculations. The atomic structure differs from previous proposals, but is reminiscent of La adsorption structures on silicon. A phase diagram of the interface stability is calculated as a function of oxygen and Al chemical potentials. We find that an electronically saturated interface is obtained only if dopant atoms segregate to the interface. These findings raise serious doubts whether LaAlO3 can be used as an epitaxial gate dielectric.

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