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Bertram Batlogg

Bertram Batlogg contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2010arXiv

High magnetic field scales and critical currents in SmFeAs(O,F) crystals: promising for applications

Superconducting technology provides most sensitive field detectors, promising implementations of qubits and high field magnets for medical imaging and for most powerful particle accelerators. Thus, with the discovery of new superconducting materials, such as the iron pnictides, exploring their potential for applications is one of the foremost tasks. Even if the critical temperature Tc is high, intrinsic electronic properties might render applications rather difficult, particularly if extreme electronic anisotropy prevents effective pinning of vortices and thus severely limits the critical current density, a problem well known for cuprates. While many questions concerning microscopic electronic properties of the iron pnictides have been successfully addressed and estimates point to a very high upper critical field, their application potential is less clarified. Thus we focus here on the critical currents, their anisotropy and the onset of electrical dissipation in high magnetic fields up to 65 T. Our detailed study of the transport properties of optimally doped SmFeAs(O,F) single crystals reveals a promising combination of high (>2 x 10^6 A/cm^2) and nearly isotropic critical current densities along all crystal directions. This favorable intragrain current transport in SmFeAs(O,F), which shows the highest Tc of 54 K at ambient pressure, is a crucial requirement for possible applications. Essential in these experiments are 4-probe measurements on Focused Ion Beam (FIB) cut single crystals with sub-μ\m^2 cross-section, with current along and perpendicular to the crystallographic c-axis and very good signal-to-noise ratio (SNR) in pulsed magnetic fields. The pinning forces have been characterized by scaling the magnetically measured "peak effect".

preprint2009arXiv

Calculating the trap density of states in organic field-effect transistors from experiment: A comparison of different methods

The spectral density of localized states in the band gap of pentacene (trap DOS) was determined with a pentacene-based thin-film transistor from measurements of the temperature dependence and gate-voltage dependence of the contact-corrected field-effect conductivity. Several analytical methods to calculate the trap DOS from the measured data were used to clarify, if the different methods lead to comparable results. We also used computer simulations to further test the results from the analytical methods. Most methods predict a trap DOS close to the valence band edge that can be very well approximated by a single exponential function with a slope in the range of 50-60 meV and a trap density at the valence band edge of approx. 2x10E21 eV-1cm-3. Interestingly, the trap DOS is always slightly steeper than exponential. An important finding is that the choice of the method to calculate the trap DOS from the measured data can have a considerable effect on the final result. We identify two specific simplifying assumptions that lead to significant errors in the trap DOS. The temperature-dependence of the band mobility should generally not be neglected. Moreover, the assumption of a constant effective accumulation layer thickness leads to a significant underestimation of the slope of the trap DOS.