BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Bertram Batlogg

Bertram Batlogg appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.supr-concond-mat.str-elcond-mat.mes-hall

Catalog footprint

What is connected

11works
4topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

11 published item(s)

preprint2016arXiv

Interplay between magnetism and sodium vacancy ordering in NaxCoO2

Using a combination of low-temperature nanocalorimetry and x-ray diffraction we identify three temperature regimes characterized by distinct Na ordering patterns (low temperature up to 290 K, intermediate 290-340 K, and high above 340 K). Through freezing-in of these patterns we establish the two key roles sodium intercalation plays in the formation of the magnetic ground state: supplying the proper electron count for in-plane ferromagnetic interaction and through the 3D sodium ordering providing the interplane antiferromagnetic exchange path.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Radiation induced electronic trap states and local structural disorder in van~der~Waals bonded semiconductor crystals

In controlled X-ray irradiation experiments, the formation of trap states in the prototypical van der Waals bonded semiconductor Rubrene is studied quantitatively for doses up to 82 Gy (Gy = J/kg). About 100 electronic trap states, located around 0.3 eV above the valence band, are created by each absorbed 8 keV photon which is 2-3 orders of magnitude more than 1 MeV protons produce. Thermal annealing is shown to reduce these traps. Local structural disorder, which has also been induced by other means in different studies, is thus identified as a common origin of trap states in van der Waals bonded molecular organic semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Unusual anisotropic response of the charge carrier mobility to uniaxial mechanical strain in Rubrene crystals

Charge transport in Rubrene single crystals under uniaxial mechanical strain is systematically investigated in the crystal's two in-plane transport directions both under tensile and compressive strain applied parallel or perpendicular to the current direction. The density of trap states remains unchanged. The field-effect mobility as a benchmark figures for intermolecular transport is found to increase with compressive strain and vice versa with a magnitude of -1.5 cm2/Vs per percent of strain independently of tranport direction. A very remarkable result is the mobility change when the crystal is strained perpendicular to the transport direction. While this enhancement could be quantitatively explained from an improved wave-function overlap, mobility in the perpendicular direction improves even more, contrary to simple geometric considerations based od later expansion and usual Poisson ratios. This result emphasises the central role of the stress induced variations of the dynamics wave function overlap in organic molecular crystals.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Approaching the Trap-Free Limit in Organic Single Crystal Field-Effect Transistors

Crystalline organic semiconductors, bonded by weak van der Waals forces, exhibit macroscopic properties that are very similar to those of inorganic semiconductors. While there are many open questions concerning the microscopic nature of charge transport, minimizing the density of trap states (trap DOS) is crucial to elucidate the intrinsic transport mechanism. We explore the limits of state-of-the-art organic crystals by measuring single crystalline rubrene field-effect transistors that show textbook like transfer characteristics, indicating a very low trap DOS. Particularly, the high purity of the crystals and the very clean interface to the gate dielectric are reflected in an unprecedentedly low subthreshold swing of 65 ${\rm mV / decade}$, remarkably close to the fundamental limit of $58.5 {\rm mV / decade}$. From the measured subthreshold behavior we have consistently quantified the trap DOS by two different methods, yielding an exceedingly low trap density of $D_{bulk} = 1 \times 10^{13}~{\rm cm^{-3}eV^{-1}}$ at an energy of $\sim0.62~{\rm eV}$. These numbers correspond to one trap per eV in $10^8$ rubrene molecules. The equivalent density of traps located at the interface is $D_{it} = 3 \times 10^{9}~{\rm cm^{-2}eV^{-1}}$ which puts them on par with the best crystalline ${\rm SiO_2/Si}$ field-effect transistors.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Critical current oscillations in the intrinsic hybrid vortex state of SmFeAs(O,F)

In layered superconductors the order parameter may be modulated within the unit cell, leading to non-trivial modifications of the vortex core if the interlayer coherence length $ξ_c(T)$ is comparable to the interlayer distance. In the iron-pnictide SmFeAs(O,F) ($T_c \approx 50$K) this occurs below a cross-over temperature $T^\star \approx 41$K, which separates two regimes of vortices: anisotropic Abrikosov-like at high and Josephson-like at low temperatures. Yet in the transition region around $T^\star$, hybrid vortices between these two characteristics appear. Only in this region around $T^\star$ and for magnetic fields well aligned with the FeAs layers, we observe oscillations of the c-axis critical current $j_c(H)$ periodic in $\frac{1}{\sqrt{H}}$ due to a delicate balance of intervortex forces and interaction with the layered potential. $j_c(H)$ shows pronounced maxima when a hexagonal vortex lattice is commensurate with the crystal structure. The narrow temperature window in which oscillations are observed suggests a significant suppression of the order parameter between the superconducting layers in SmFeAs(O,F), despite its low coherence length anisotropy ($γ_ξ\approx 3-5$).

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Intrinsic Josephson junctions in the iron-based multi-band superconductor (V2Sr4O6)Fe2As2

In layered superconductors, Josephson junctions may be formed within the unit cell due to sufficiently low interlayer coupling. These intrinsic Josephson junction (iJJ) systems have attracted considerable interest for their application potential in quantum computing as well as efficient sources of THz radiation, closing the famous "THz gap". So far, iJJ have been demonstrated in single-band, copper-based high-Tc superconductors, mainly in Ba-Sr-Ca-Cu-O. Here we report clear experimental evidence for iJJ behavior in the iron-based superconductor (V2Sr4O6)Fe2As2. The intrinsic junctions are identified by periodic oscillations of the flux flow voltage upon increasing a well aligned in-plane magnetic field. The periodicity is well explained by commensurability effects between the Josephson vortex lattice and the crystal structure, which is a hallmark signature of Josephson vortices confined into iJJ stacks. This finding adds (V2Sr4O6)Fe2As2 as the first iron-based, multi-band superconductor to the copper-based iJJ materials of interest for Josephson junction applications, and in particular novel devices based on multi-band Josephson coupling may be realized.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Quantum oscillations of the superconductor LaRu$_2$P$_2$ : comparable mass enhancement $λ\approx 1$ in Ru and Fe phosphides

We have studied the angular dependent de Haas-van Alphen oscillations of LaRu$_2$P$_2$ using magnetic torque in pulsed magnetic fields up to 60T. The observed oscillation frequencies are in excellent agreement with the geometry of the calculated Fermi surface. The temperature dependence of the oscillation amplitudes reveals effective masses m*($α$)=0.71 and m*($β$)=0.99 m$_e$, which are enhanced over the calculated band mass by $λ^{cyc}$ of 0.8. We find a similar enhancement $λ^γ \approx 1$ in comparing the measured electronic specific heat ($γ= 11.5$ mJ/mol K$^2$) with the total DOS from band structure calculations. Remarkably, very similar mass enhancements have been reported in other pnictides LaFe$_2$P$_2$, LaFePO ($T_c \approx 4K$), and LaRuPO, independent of whether they are superconducting or not. This is contrary to the common perceptions that the normal state quasi-particle renormalizations reflect the strength of the superconducting paring mechanism and leads to new questions about pairing in isostructural and isoelectronic Ru- and Fe-pnictide superconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Gate Bias Stress in Pentacene Field-Effect-Transistors: Charge Trapping in the Dielectric or Semiconductor

Gate bias stress instability in organic field-effect transistors (OFETs) is a major conceptual and device issue. This effect manifests itself by an undesirable shift of the transfer characteristics and is associated with long term charge trapping. We study the role of the dielectric and the semiconductor separately by producing OFETs with the same semiconductor (pentacene) combined with different dielectrics (SiO$_2$ and Cytop). We show, it is possible to fabricate devices which are immune to gate bias stress. For other material combinations, charge trapping occurs in the semiconductor alone, or in the dielectric.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

High magnetic field scales and critical currents in SmFeAs(O,F) crystals: promising for applications

Superconducting technology provides most sensitive field detectors, promising implementations of qubits and high field magnets for medical imaging and for most powerful particle accelerators. Thus, with the discovery of new superconducting materials, such as the iron pnictides, exploring their potential for applications is one of the foremost tasks. Even if the critical temperature Tc is high, intrinsic electronic properties might render applications rather difficult, particularly if extreme electronic anisotropy prevents effective pinning of vortices and thus severely limits the critical current density, a problem well known for cuprates. While many questions concerning microscopic electronic properties of the iron pnictides have been successfully addressed and estimates point to a very high upper critical field, their application potential is less clarified. Thus we focus here on the critical currents, their anisotropy and the onset of electrical dissipation in high magnetic fields up to 65 T. Our detailed study of the transport properties of optimally doped SmFeAs(O,F) single crystals reveals a promising combination of high (>2 x 10^6 A/cm^2) and nearly isotropic critical current densities along all crystal directions. This favorable intragrain current transport in SmFeAs(O,F), which shows the highest Tc of 54 K at ambient pressure, is a crucial requirement for possible applications. Essential in these experiments are 4-probe measurements on Focused Ion Beam (FIB) cut single crystals with sub-μ\m^2 cross-section, with current along and perpendicular to the crystallographic c-axis and very good signal-to-noise ratio (SNR) in pulsed magnetic fields. The pinning forces have been characterized by scaling the magnetically measured "peak effect".

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

The trap DOS in small molecule organic semiconductors: A quantitative comparison of thin-film transistors with single crystals

We show that it is possible to reach one of the ultimate goals of organic electronics: producing organic field-effect transistors with trap densities as low as in the bulk of single crystals. We studied the spectral density of localized states in the band gap (trap DOS) of small molecule organic semiconductors as derived from electrical characteristics of organic field-effect transistors or from space-charge-limited-current measurements. This was done by comparing data from a large number of samples including thin-film transistors (TFT's), single crystal field-effect transistors (SC-FET's) and bulk samples. The compilation of all data strongly suggests that structural defects associated with grain boundaries are the main cause of "fast" hole traps in TFT's made with vacuum-evaporated pentacene. For high-performance transistors made with small molecule semiconductors such as rubrene it is essential to reduce the dipolar disorder caused by water adsorbed on the gate dielectric surface. In samples with very low trap densities, we sometimes observe a steep increase of the trap DOS very close (<0.15 eV) to the mobility edge with a characteristic slope of 10-20 meV. It is discussed to what degree band broadening due to the thermal fluctuation of the intermolecular transfer integral is reflected in this steep increase of the trap DOS. Moreover, we show that the trap DOS in TFT's with small molecule semiconductors is very similar to the trap DOS in hydrogenated amorphous silicon even though polycrystalline films of small molecules with van der Waals-type interaction on the one hand are compared with covalently bound amorphous silicon on the other hand.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Calculating the trap density of states in organic field-effect transistors from experiment: A comparison of different methods

The spectral density of localized states in the band gap of pentacene (trap DOS) was determined with a pentacene-based thin-film transistor from measurements of the temperature dependence and gate-voltage dependence of the contact-corrected field-effect conductivity. Several analytical methods to calculate the trap DOS from the measured data were used to clarify, if the different methods lead to comparable results. We also used computer simulations to further test the results from the analytical methods. Most methods predict a trap DOS close to the valence band edge that can be very well approximated by a single exponential function with a slope in the range of 50-60 meV and a trap density at the valence band edge of approx. 2x10E21 eV-1cm-3. Interestingly, the trap DOS is always slightly steeper than exponential. An important finding is that the choice of the method to calculate the trap DOS from the measured data can have a considerable effect on the final result. We identify two specific simplifying assumptions that lead to significant errors in the trap DOS. The temperature-dependence of the band mobility should generally not be neglected. Moreover, the assumption of a constant effective accumulation layer thickness leads to a significant underestimation of the slope of the trap DOS.

0 citations0 reviewsNo code linkedOpen access