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Kapildeb Dolui

Kapildeb Dolui appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.supr-con

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Published work

15 published item(s)

preprint2022arXiv

Spin pumping from antiferromagnetic insulator spin-orbit-proximitized by adjacent heavy metal: A first-principles Floquet-nonequilibrium Green's function study

Motivated by recent experiments [P. Vaidya {\em et al.}, Science {\bf 368}, 160 (2020)] on spin pumping from sub-THz radiation-driven uniaxial antiferromagnetic insulator (AFI) MnF$_2$ into heavy metal (HM) Pt hosting strong spin-orbit (SO) coupling, we compute and compare pumped spin currents in Cu/MnF$_2$/Cu and Pt/MnF$_2$/Cu heterostructures. Recent theories of spin pumping by AFI have relied on simplistic Hamiltonians (such as tight-binding) and the scattering approach to quantum transport yielding the so-called interfacial spin mixing conductance (SMC), but the concept of SMC ceases to be applicable when SO coupling is present directly at the interface. In contrast, we use more general first-principles quantum transport approach which combines noncollinear density functional theory with Floquet-nonequilibrium Green's functions in order to take into account: {\em SO-proximitized AFI} as a new type of quantum material, different from isolated AFI and brought about by AFI hybridization with adjacent HM layer; SO coupling at interfaces; and evanescent wavefunctions penetrating from Pt or Cu into AFI layer to make its interfacial region {\em conducting} rather than insulating as in the original AFI. The DC component of pumped spin current $I_\mathrm{DC}^{S_z}$ vs. precession cone angle $θ_{\vb*{l}}$ of the Néel vector $\vb*{l}$ of AFI {\em does not} follow putative $I^{S_z}_\mathrm{DC} \propto \sin^2 θ_{\vb*{l}}$, except for very small angles $θ_{\vb*{l}} \lesssim 10^\circ$ for which we can define an {\em effective} SMC from the prefactor and find that it doubles from MnF$_2$/Cu to MnF$_2$/Pt interface. In addition, the angular dependence $I^{S_z}_\mathrm{DC}(θ_{\vb*{l}})$ differs for opposite directions of precession of the Néel vector, leading to twice as large SMC for the right-handed than for the left-handed chirality of the precession mode.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Experimental Evidence of Stable 2$H$ Phase on the Surface of Layered 1$T'$-TaTe$_2$

We report on the low-energy electronic structure of Tantalum ditelluride (1$T'$-TaTe$_2$), one of the charge density wave (CDW) materials from the group V transition metal dichalcogenides using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT). We find that the Fermi surface topology of TaTe$_2$ is quite complicated compared to its isovalent compounds such as TaS$_2$, TaSe$_2$, and isostructural compound NbTe$_2$. More importantly, we discover that the surface electronic structure of 1$T'$-TaTe$_2$ has more resemblance to the 2$H$-TaTe$_2$, while the bulk electronic structure has more resemblance to the hypothetical 1$T$-TaTe$_2$. These experimental observations are thoroughly compared with our DFT calculations performed on 1$T$-, 2$H$- and 2$H$ (monolayer)/1$T$- TaTe$_2$. We further notice that the Fermi surface topology is temperature independent up to 180 K, confirming that the 2$H$ phase on the surface is stable up to 180 K and the CDW order is not due to the Fermi surface nesting.

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preprint2019arXiv

Effective spin-mixing conductance of topological-insulator/ferromagnet and heavy-metal/ferromagnet spin-orbit-coupled interfaces: A first-principles Floquet-nonequilibrium-Green-function approach

The spin mixing conductance (SMC) is a key quantity determining efficiency of spin transport across interfaces. Thus, knowledge of its precise value is required for accurate measurement of parameters quantifying numerous effects in spintronics, such as spin-orbit torque, spin Hall magnetoresistance, spin Hall effect and spin pumping. However, the standard expression for SMC, provided by the scattering theory in terms of the reflection probability amplitudes, is inapplicable when strong spin-orbit coupling (SOC) is present directly at the interface. This is the precisely the case of topological-insulator/ferromagnet and heavy-metal/ferromagnet interfaces of great contemporary interest. We introduce an approach where first-principles Hamiltonian of these interfaces, obtained from noncollinear density functional theory (ncDFT) calculations, is combined with charge conserving Floquet-nonequilibrium-Green-function formalism to compute {\em directly} the pumped spin current $I^{S_z}$ into semi-infinite left lead of two-terminal heterostructures Cu/X/Co/Cu or Y/Co/Cu---where X=Bi$_2$Se$_3$ and Y=Pt or W---due to microwave-driven steadily precessing magnetization of the Co layer. This allows us extract an effective SMC as a prefactor in $I^{S_z}$ vs. precession cone angle $θ$ dependence, as long as it remains the same, $I^{S_z} \propto \sin^2 θ$, as in the case where SOC is absent. By comparing calculations where SOC in switched off vs. switched on in ncDFT calculations, we find that SOC consistently reduces the pumped spin current and, therefore, the effective SMC.

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preprint2019arXiv

First-principles theory of proximity spin-orbit torque on a two-dimensional magnet: Current-driven antiferromagnet-to-ferromagnet reversible transition in bilayer CrI$_3$

The recently discovered two-dimensional (2D) magnetic insulator CrI$_3$ is an intriguing case for basic research and spintronic applications since it is a ferromagnet in the bulk, but an antiferromagnet in bilayer form, with its magnetic ordering amenable to external manipulations. Using first-principles quantum transport approach, we predict that injecting unpolarized charge current parallel to the interface of bilayer-CrI$_3$/monolayer-TaSe$_2$ van der Waals heterostructure will induce spin-orbit torque (SOT) and thereby driven dynamics of magnetization on the first monolayer of CrI$_3$ in direct contact with TaSe$_2$. By combining calculated complex angular dependence of SOT with the Landau-Lifshitz-Gilbert equation for classical dynamics of magnetization, we demonstrate that current pulses can switch the direction of magnetization on the first monolayer to become parallel to that of the second monolayer, thereby converting CrI$_3$ from antiferromagnet to ferromagnet while not requiring any external magnetic field. We explain the mechanism of this reversible current-driven nonequilibrium phase transition by showing that first monolayer of CrI$_3$ carries current due to evanescent wavefunctions injected by metallic transition metal dichalcogenide TaSe$_2$, while concurrently acquiring strong spin-orbit coupling (SOC) via such proximity effect, whereas the second monolayer of CrI$_3$ remains insulating. The transition can be detected by passing vertical read current through the vdW heterostructure, encapsulated by bilayer of hexagonal boron nitride and sandwiched between graphite electrodes, where we find tunneling magnetoresistance of $\simeq 240$%.

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preprint2016arXiv

Intrinsic large gap quantum anomalous Hall insulators in La$X$ ($X$=Br, Cl, I)

We report a theoretical prediction of a new class of bulk and intrinsic quantum Anomalous Hall (QAH) insulators La$X$ ($X$=Br, Cl, and I) via relativistic first-principle calculations. We find that these systems are innate long-ranged ferromagnets which, with the help of intrinsic spin-orbit coupling, become QAH insulators. A low-energy multiband tight binding model is developed to understand the origin of the QAH effect. Finally integer Chern number is obtained via Berry phase computation for each two-dimensional plane. These materials have the added benefit of a sizable band gap of as large as $\sim$ 25 meV, with the flexibility of enhancing it to above 75 meV via strain engineering. The synthesis of La$X$ materials will provide the impurity-free single crystals and thin-film QAH insulators for versatile experiments and functionalities.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Unusual Dirac fermions on the surface of noncentrosymmetric $α$ - BiPd superconductor

Combining multiple emergent correlated properties such as superconductivity and magnetism within the topological matrix can have exceptional consequences in garnering new and exotic physics. Here, we study the topological surface states from a noncentrosymmetric $α$-BiPd superconductor by employing angle-resolved photoemission spectroscopy (ARPES) and first principle calculations. We observe that the Dirac surface states of this system have several interesting and unusual properties, compared to other topological surface states. The surface state is strongly anisotropic and the in-plane Fermi velocity varies rigorously on rotating the crystal about the $y$-axis. Moreover, it acquires an unusual band gap as a function of $k_y$, possibly due to hybridization with bulk bands, detected upon varying the excitation energy. Coexistence of all the functional properties, in addition to the unusual surface state characteristics make this an interesting material.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Quantum-confinement and Structural Anisotropy result in Electrically-Tunable Dirac Cone in Few-layer Black Phosphorous

2D materials are well-known to exhibit interesting phenomena due to quantum confinement. Here, we show that quantum confinement, together with structural anisotropy, result in an electric-field-tunable Dirac cone in 2D black phosphorus. Using density functional theory calculations, we find that an electric field, E_ext, applied normal to a 2D black phosphorus thin film, can reduce the direct band gap of few-layer black phosphorus, resulting in an insulator-to-metal transition at a critical field, E_c. Increasing E_ext beyond E_c can induce a Dirac cone in the system, provided the black phosphorus film is sufficiently thin. The electric field strength can tune the position of the Dirac cone and the Dirac-Fermi velocities, the latter being similar in magnitude to that in graphene. We show that the Dirac cone arises from an anisotropic interaction term between the frontier orbitals that are spatially separated due to the applied field, on different halves of the 2D slab. When this interaction term becomes vanishingly small for thicker films, the Dirac cone can no longer be induced. Spin-orbit coupling can gap out the Dirac cone at certain electric fields; however, a further increase in field strength reduces the spin-orbit-induced gap, eventually resulting in a topological-insulator-to-Dirac-semi-metal transition.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Spin-valve Effect in NiFe/MoS2/NiFe Junctions

Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have been recently proposed as appealing candidate materials for spintronic applications owing to their distinctive atomic crystal structure and exotic physical properties arising from the large bonding anisotropy. Here we introduce the first MoS2-based spin-valves that employ monolayer MoS2 as the nonmagnetic spacer. In contrast with what expected from the semiconducting band-structure of MoS2, the vertically sandwiched-MoS2 layers exhibit metallic behavior. This originates from their strong hybridization with the Ni and Fe atoms of the Permalloy (Py) electrode. The spin-valve effect is observed up to 240 K, with the highest magnetoresistance (MR) up to 0.73% at low temperatures. The experimental work is accompanied by the first principle electron transport calculations, which reveal an MR of ~ 9% for an ideal Py/MoS2/Py junction. Our results clearly identify TMDs as a promising spacer compound in magnetic tunnel junctions and may open a new avenue for the TMDs-based spintronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Superconducting dome in MoS2 and TiSe2 generated by quasiparticle-phonon coupling

We use a first-principles based self-consistent momentum-resolved density fluctuation (MRDF) model to compute the combined effects of electron-electron and electron-phonon interactions to describe the superconducting dome in the correlated MoS2 thin flake and TiSe2. We find that without including the electron-electron interaction, the electron-phonon coupling and the superconducting transition temperature (Tc) are overestimated in both these materials. However, once the full angular and dynamical fluctuations of the spin and charge density induced quasiparticle self-energy effects are included, the electron-phonon coupling and Tc are reduced to the experimental value. With doping, both electronic correlation and electron-phonon coupling grows, and above some doping value, the former becomes so large that it starts to reduce the quasiparticle-phonon coupling constant and Tc, creating a superconducting dome, in agreement with experiments.

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preprint2015arXiv

Theory of Weyl orbital semimetals and predictions of several materials classes

Graphene, topological insulators, and Weyl semimetals are three widely studied materials classes which possess Dirac or Weyl cones arising from either sublattice symmetry or spin-orbit coupling. In this work, we present a theory of a new class of bulk Dirac and Weyl cones, dubbed Weyl orbital semimetals, where the orbital polarization and texture inversion between two electronic states at discrete momenta lend itself into protected Dirac or Weyl cones without spin-orbit coupling. We also predict several families of Weyl orbital semimetals including V$_3$S$_4$, NiTi3S6, BLi, and PbO$_2$ via first-principle band structure calculations. We find that the highest Fermi velocity predicted in some of these materials is even larger than that of the existing Dirac materials. The synthesis of Weyl orbital semimetals will not only expand the territory of Dirac materials beyond the quintessential spin-orbit coupled systems and hexagonal lattice to the entire periodic table, but it may also open up new possibilities for orbital controlled electronics or `orbitronics'.

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preprint2014arXiv

Efficient spin injection and giant magnetoresistance in Fe/MoS$_2$/Fe junctions

We demonstrate giant magnetoresistance in Fe/MoS$_2$/Fe junctions by means of \textit{ab-initio} transport calculations. We show that junctions incorporating either a mono- or a bi-layer of MoS$_2$ are metallic and that Fe acts as an efficient spin injector into MoS$_2$ with an efficiency of about 45\%. This is the result of the strong coupling between the Fe and S atoms at the interface. For junctions of greater thickness a maximum magnetoresistance of $\sim$300\% is obtained, which remains robust with the applied bias as long as transport is in the tunneling limit. A general recipe for improving the magnetoresistance in spin valves incorporating layered transition metal dichalcogenides is proposed.

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preprint2013arXiv

Ab-initio study on the possible doping strategies for MoS$_2$ monolayers

Density functional theory is used to systematically study the electronic and magnetic properties of doped MoS$_2$ monolayers, where the dopants are incorporated both via S/Mo substitution or as adsorbates. Among the possible substitutional dopants at the Mo site, Nb is identified as suitable p-type dopant, while Re is the donor with the lowest activation energy. When dopants are simply adsorbed on a monolayer we find that alkali metals shift the Fermi energy into the MoS$_2$ conduction band, making the system n-type. Finally, the adsorption of charged molecules is considered, mimicking an ionic liquid environment. We find that molecules adsorption can lead to both n- and p-type conductivity, depending on the charge polarity of the adsorbed species.

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preprint2013arXiv

Dimensionality driven charge density wave instability in TiS$_2$

Density functional theory and density functional perturbation theory are used to investigate the electronic and vibrational properties of TiS$_2$. Within the local density approximation the material is a semi-metal both in the bulk and in the monolayer form. Most interestingly we observe a Kohn anomaly in the bulk phonon dispersion, which turns into a charge density wave instability when TiS$_2$ is thinned to less than four monolayers. Such charge density wave phase can be tuned by compressive strain, which appears to be the control parameter of the instability.

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preprint2013arXiv

Electric Field Effects on Armchair MoS2 Nanoribbons

{\it Ab initio} density functional theory calculations are performed to investigate the electronic structure of MoS$_2$ armchair nanoribbons in the presence of an external static electric field. Such nanoribbons, which are nonmagnetic and semiconducting, exhibit a set of weakly interacting edge states whose energy position determines the band-gap of the system. We show that, by applying an external transverse electric field, $E_\mathrm{ext}$, the nanoribbons band-gap can be significantly reduced, leading to a metal-insulator transition beyond a certain critical value. Moreover, the presence of a sufficiently high density of states at the Fermi level in the vicinity of the metal-insulator transition leads to the onset of Stoner ferromagnetism that can be modulated, and even extinguished, by $E_\mathrm{ext}$. In the case of bi-layer nanoribbons we further show that the band-gap can be changed from indirect to direct by applying a transverse field, an effect which might be of significance for opto-electronics applications.

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preprint2013arXiv

Origin of the n-type and p-type conductivity of MoS2 monolayers on a SiO2 substrate

Ab-initio density functional theory calculations are performed to study the electronic properties of a MoS2 monolayer deposited over a SiO2 substrate in the presence of interface impurities and defects. When MoS2 is placed on a defect-free substrate the oxide plays an insignificant role, since the conduction band top and the valence band minimum of MoS2 are located approximately in the middle of the SiO2 band-gap. However, if Na impurities and O dangling bonds are introduced at the SiO2 surface, these lead to localized states, which modulate the conductivity of the MoS2 monolayer from n- to p-type. Our results show that the conductive properties of MoS2 deposited on SiO2 are mainly determined by the detailed structure of the MoS2 /SiO2 interface, and suggest that doping the substrate can represent a viable strategy for engineering MoS2 -based devices.

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