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Branislav K. Nikolic

Branislav K. Nikolic appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallhep-thcond-mat.mtrl-scicond-mat.softcond-mat.stat-mechcond-mat.str-elmath-phmath.MPBiological Physicscond-mat.supr-connlin.PSphysics.atom-phphysics.chem-phphysics.comp-phquant-ph

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Published work

28 published item(s)

preprint2025arXiv

Schwinger-Keldysh non-perturbative field theory of open quantum systems beyond the Markovian regime: Application to spin-boson and spin-chain-boson models

We develop a unified framework for open quantum systems composed of many mutually interacting quantum spins, or any isomorphic systems like qubits and qudits, surrounded by one or more independent bosonic baths. Our framework, based on Schwinger-Keldysh field theory (SKFT), can handle arbitrary spin value S, dimensionality of space, and geometry, while being applicable to a large parameter space for system and bath or their coupling. It can probe regimes in which non-Markovian dynamics and nonperturbative effects pose formidable challenges for other state-of-the-art theoretical methods. This is achieved by working with the two-particle irreducible (2PI) effective action, which resums classes of Feynman diagrams of SKFT to an infinite order. Furthermore, such diagrams are generated via an expansion in 1/N, where N is the number of Schwinger bosons we employ to map spin operators onto canonically commuting ones, rather than via conventional expansion in system-bath coupling constant. We carefully benchmark our SKFT+2PI-computed results vs. numerically (quasi)exact ones from tensor network calculations applied to the archetypical spin-boson model where both methodologies are applicable. Additionally, we demonstrate the capability of SKFT+2PI to handle a much more complex spin-chain-boson model with multiple baths interacting with each spin where no benchmark from other methods is available at present. The favorable numerical cost of solving integro-differential equations produced by the SKFT+2PI framework with an increasing number of spins and time steps makes it a promising route for simulating driven-dissipative systems in quantum computing, quantum magnonics, and quantum spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Spin pumping from antiferromagnetic insulator spin-orbit-proximitized by adjacent heavy metal: A first-principles Floquet-nonequilibrium Green's function study

Motivated by recent experiments [P. Vaidya {\em et al.}, Science {\bf 368}, 160 (2020)] on spin pumping from sub-THz radiation-driven uniaxial antiferromagnetic insulator (AFI) MnF$_2$ into heavy metal (HM) Pt hosting strong spin-orbit (SO) coupling, we compute and compare pumped spin currents in Cu/MnF$_2$/Cu and Pt/MnF$_2$/Cu heterostructures. Recent theories of spin pumping by AFI have relied on simplistic Hamiltonians (such as tight-binding) and the scattering approach to quantum transport yielding the so-called interfacial spin mixing conductance (SMC), but the concept of SMC ceases to be applicable when SO coupling is present directly at the interface. In contrast, we use more general first-principles quantum transport approach which combines noncollinear density functional theory with Floquet-nonequilibrium Green's functions in order to take into account: {\em SO-proximitized AFI} as a new type of quantum material, different from isolated AFI and brought about by AFI hybridization with adjacent HM layer; SO coupling at interfaces; and evanescent wavefunctions penetrating from Pt or Cu into AFI layer to make its interfacial region {\em conducting} rather than insulating as in the original AFI. The DC component of pumped spin current $I_\mathrm{DC}^{S_z}$ vs. precession cone angle $θ_{\vb*{l}}$ of the Néel vector $\vb*{l}$ of AFI {\em does not} follow putative $I^{S_z}_\mathrm{DC} \propto \sin^2 θ_{\vb*{l}}$, except for very small angles $θ_{\vb*{l}} \lesssim 10^\circ$ for which we can define an {\em effective} SMC from the prefactor and find that it doubles from MnF$_2$/Cu to MnF$_2$/Pt interface. In addition, the angular dependence $I^{S_z}_\mathrm{DC}(θ_{\vb*{l}})$ differs for opposite directions of precession of the Néel vector, leading to twice as large SMC for the right-handed than for the left-handed chirality of the precession mode.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Magnon-driven chiral charge and spin pumping and electron-magnon scattering from time-dependent quantum transport combined with atomistic spin dynamics theory

Using newly developed quantum-classical hybrid framework, we investigate interaction between spin-polarized conduction electrons and a single spin wave (SW) coherently excited within a metallic ferromagnetic nanowire. When the nanowire hosting SW is attached to two normal metal (NM) leads, with no dc bias voltage applied between them, the SW pumps chiral electronic charge and spin currents into the leads---their direction is tied to the direction of SW propagation and they scale linearly with the frequency of the precession. This is in contrast to: standard pumping by the uniform precession mode with identical spin currents flowing in both directions and no accompanying charge current; or experimentally observed [C.~Ciccarelli et al., Nat. Nanotech. 10, 50 (2014); M.~Evelt et al., Phys. Rev. B 95, 024408 (2017)] magnonic charge pumping which requires spin-orbit coupling spin-orbit coupling. The mechanism behind our prediction is nonadiabaticity due to time-retardation effects---motion of localized magnetic moment affects conduction electron spin in a retarded way, so that it takes a finite time until the electron spin reacts to the motion of the classical vector. Upon injecting dc spin-polarized charge current from the left NM lead, electrons interact with SW where outflowing charge and spin current into the right NM lead are changed due to both scattering off time-dependent potential generated by the SW and superposition with the currents pumped by the SW itself. Using Lorentzian voltage pulse to excite leviton out of the Fermi sea, which carries one electron charge with no accompanying electron-hole pairs and behaves as soliton-like quasiparticle, we describe how a single electron interacts with a single SW.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Robustness of quantized transport through edge states of finite length: Imaging current density in Floquet topological vs. quantum spin and anomalous Hall insulators

The theoretical analysis of topological insulators (TIs) has been traditionally focused on infinite homogeneous crystals with band gap in the bulk and nontrivial topology of their wavefunctions, or infinite wires whose boundaries host surface or edge metallic states. However, experimental devices contain finite-size topological region attached to normal metal (NM) leads, which poses a question about how precise is quantization of longitudinal conductance and how electrons transition from topologically trivial NM leads into the edge states. This is particularly pressing issues for recently conjectured two-dimensional (2D) Floquet TI where electrons flow from time-independent NM leads into time-dependent edge states---the very recent experimental realization of Floquet TI using graphene irradiated by circularly polarized light did not exhibit either quantized longitudinal or Hall conductance. Here we employ charge conserving solution for Floquet-nonequlibrium Green functions (NEGFs) of irradiated graphene nanoribbon to compute longitudinal two-terminal conductance, as well as spatial profiles of local current density as electrons propagate from NM leads into the Floquet TI. In the case of Floquet TI both bulk and edge local current densities contribute equally to total current, which leads to longitudinal conductance below the expected quantized plateau that is slightly reduced by edge vacancies. We propose two experimental schemes to detect coexistence of bulk and edge current densities within Floquet TI: (i) drilling a nanopore in the interior of irradiated region of graphene will induce backscattering of bulk current density, thereby reducing longitudinal conductance by $\sim 28$%; (ii) imaging of magnetic field produced by local current density using diamond NV centers.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Effective spin-mixing conductance of topological-insulator/ferromagnet and heavy-metal/ferromagnet spin-orbit-coupled interfaces: A first-principles Floquet-nonequilibrium-Green-function approach

The spin mixing conductance (SMC) is a key quantity determining efficiency of spin transport across interfaces. Thus, knowledge of its precise value is required for accurate measurement of parameters quantifying numerous effects in spintronics, such as spin-orbit torque, spin Hall magnetoresistance, spin Hall effect and spin pumping. However, the standard expression for SMC, provided by the scattering theory in terms of the reflection probability amplitudes, is inapplicable when strong spin-orbit coupling (SOC) is present directly at the interface. This is the precisely the case of topological-insulator/ferromagnet and heavy-metal/ferromagnet interfaces of great contemporary interest. We introduce an approach where first-principles Hamiltonian of these interfaces, obtained from noncollinear density functional theory (ncDFT) calculations, is combined with charge conserving Floquet-nonequilibrium-Green-function formalism to compute {\em directly} the pumped spin current $I^{S_z}$ into semi-infinite left lead of two-terminal heterostructures Cu/X/Co/Cu or Y/Co/Cu---where X=Bi$_2$Se$_3$ and Y=Pt or W---due to microwave-driven steadily precessing magnetization of the Co layer. This allows us extract an effective SMC as a prefactor in $I^{S_z}$ vs. precession cone angle $θ$ dependence, as long as it remains the same, $I^{S_z} \propto \sin^2 θ$, as in the case where SOC is absent. By comparing calculations where SOC in switched off vs. switched on in ncDFT calculations, we find that SOC consistently reduces the pumped spin current and, therefore, the effective SMC.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

First-principles theory of proximity spin-orbit torque on a two-dimensional magnet: Current-driven antiferromagnet-to-ferromagnet reversible transition in bilayer CrI$_3$

The recently discovered two-dimensional (2D) magnetic insulator CrI$_3$ is an intriguing case for basic research and spintronic applications since it is a ferromagnet in the bulk, but an antiferromagnet in bilayer form, with its magnetic ordering amenable to external manipulations. Using first-principles quantum transport approach, we predict that injecting unpolarized charge current parallel to the interface of bilayer-CrI$_3$/monolayer-TaSe$_2$ van der Waals heterostructure will induce spin-orbit torque (SOT) and thereby driven dynamics of magnetization on the first monolayer of CrI$_3$ in direct contact with TaSe$_2$. By combining calculated complex angular dependence of SOT with the Landau-Lifshitz-Gilbert equation for classical dynamics of magnetization, we demonstrate that current pulses can switch the direction of magnetization on the first monolayer to become parallel to that of the second monolayer, thereby converting CrI$_3$ from antiferromagnet to ferromagnet while not requiring any external magnetic field. We explain the mechanism of this reversible current-driven nonequilibrium phase transition by showing that first monolayer of CrI$_3$ carries current due to evanescent wavefunctions injected by metallic transition metal dichalcogenide TaSe$_2$, while concurrently acquiring strong spin-orbit coupling (SOC) via such proximity effect, whereas the second monolayer of CrI$_3$ remains insulating. The transition can be detected by passing vertical read current through the vdW heterostructure, encapsulated by bilayer of hexagonal boron nitride and sandwiched between graphite electrodes, where we find tunneling magnetoresistance of $\simeq 240$%.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Hypergeometric resummation of self-consistent sunset diagrams for electron-boson quantum many-body systems out of equilibrium

A newly developed hypergeometric resummation technique [H. Mera et al., Phys. Rev. Lett. 115, 143001 (2015)] provides an easy-to-use recipe to obtain conserving approximations within the self-consistent nonequilibrium many-body perturbation theory. We demonstrate the usefulness of this technique by calculating the phonon-limited electronic current in a model of a single-molecule junction within the self-consistent Born approximation for the electron-phonon interacting system, where the perturbation expansion for the nonequilibrium Green function in powers of the free bosonic propagator typically consists of a series of non-crossing \sunset" diagrams. Hypergeometric resummation preserves conservation laws and it is shown to provide substantial convergence acceleration relative to more standard approaches to self-consistency. This result strongly suggests that the convergence of the self-consistent \sunset" series is limited by a branch-cut singularity, which is accurately described by Gauss hypergeometric functions. Our results showcase an alternative approach to conservation laws and self-consistency where expectation values obtained from conserving perturbation expansions are \summed" to their self-consistent value by analytic continuation functions able to mimic the convergence-limiting singularity structure.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

First-principles vs. semi-empirical modeling of global and local electronic transport properties of graphene nanopore-based sensors for DNA sequencing

Using first-principles quantum transport simulations, based on the nonequilibrium Green function formalism combined with density functional theory (NEGF+DFT), we examine changes in the total and local electronic currents within the plane of graphene nanoribbon with zigzag edges (ZGNR) hosting a nanopore which are induced by inserting a DNA nucleobase into the pore. We find a sizable change of the zero-bias conductance of two-terminal ZGNR + nanopore device after the nucleobase is placed into the most probable position (according to molecular dynamics trajectories) inside the nanopore of a small diameter \mbox{$D=1.2$ nm}. Although such effect decreases as the nanopore size is increased to \mbox{$D=1.7$ nm}, the contrast between currents in ZGNR + nanopore and ZGNR + nanopore + nucleobase systems can be enhanced by applying a small bias voltage $V_b \lesssim 0.1$ V. This is explained microscopically as being due to DNA nucleobase-induced modification of spatial profile of local current density around the edges of ZGNR. We repeat the same analysis using NEGF combined with self-consistent charge density functional tight-binding (NEGF+SCC-DFTB) or self-consistent extended Hückel (NEGF+SC-EH) semi-empirical methodologies. The large discrepancy we find between the results obtained from NEGF+DFT vs. those obtained from NEGF+SCC-DFTB or NEGF+SC-EH approaches could be of great importance when selecting proper computational algorithms for {\em in silico} design of optimal nanoelectronic sensors for rapid DNA sequencing.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Giant thermoelectric effect in graphene-based topological insulators with nanopores

Designing thermoelectric materials with high figure of merit $ZT=S^2 G T/κ$ requires fulfilling three often irreconcilable conditions, i.e., the high electrical conductance $G$, small thermal conductance $κ$ and high Seebeck coefficient $S$. Nanostructuring is one of the promising ways to achieve this goal as it can substantially suppress lattice contribution to $κ$. However, it may also unfavorably influence the electronic transport in an uncontrollable way. Here we theoretically demonstrate that this issue can be ideally solved by fabricating graphene nanoribbons with heavy adatoms and nanopores. These systems, acting as a two-dimensional topological insulator with robust helical edge states carrying electrical current, yield a highly optimized power factor $S^2G$ per helical conducting channel. Concurrently, their array of nanopores impedes the lattice thermal conduction through the bulk. Using quantum transport simulations coupled with first-principles electronic and phononic band structure calculations, the thermoelectric figure of merit is found to reach its maximum $ZT \simeq 3$ at $T \simeq 40$ K. This paves a way to design high-$ZT$ materials by exploiting the nontrivial topology of electronic states through nanostructuring.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Nonperturbative Quantum Physics from Low-Order Perturbation Theory

The Stark effect in hydrogen and the cubic anharmonic oscillator furnish examples of quantum systems where the perturbation results in a certain ionization probability by tunneling processes. Accordingly, the perturbed ground-state energy is shifted and broadened, thus acquiring an imaginary part which is considered to be a paradigm of nonperturbative behavior. Here we demonstrate how the low order coefficients of a divergent perturbation series can be used to obtain excellent approximations to both real and imaginary parts of the perturbed ground state eigenenergy. The key is to use analytic continuation functions with a built in analytic structure within the complex plane of the coupling constant, which is tailored by means of Bender-Wu dispersion relations. In the examples discussed the analytic continuation functions are Gauss hypergeometric functions, which take as input fourth order perturbation theory and return excellent approximations to the complex perturbed eigenvalue. These functions are Borel-consistent and dramatically outperform widely used Padé and Borel-Padé approaches, even for rather large values of the coupling constant.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Signatures of electron-magnon interaction in charge and spin currents in magnetic tunnel junctions: A nonequilibrium many-body perturbation theory approach

We develop a numerically exact scheme for resumming certain classes of Feynman diagrams in the self-consistent perturbation expansion for the electron and magnon self-energies in the nonequilibrium Green function formalism applied to a coupled electron-magnon (\mbox{e-m}) system which is driven out of equilibrium by the applied finite bias voltage. Our scheme operates with the electronic and magnonic GFs and the corresponding self-energies viewed as matrices in the Keldysh space, rather than conventionally extracting their retarded and lesser components. This is employed to understand the effect of inelastic \mbox{e-m} scattering on charge and spin current vs. bias voltage $V_b$ in F/I/F magnetic tunnel junctions (MTJs), which are modeled on a one-dimensional (1D) tight-binding lattice for the electronic subsystem and 1D Heisenberg model for the magnonic subsystem. For this purpose, we evaluate Fock diagram for the electronic self-energy and the electron-hole polarization bubble diagram for the magnonic self-energy. The respective electronic and magnonic GF lines within these diagrams are the fully interacting ones, thereby requiring to solve the ensuing coupled system of nonlinear integral equations self-consistently. Despite using the 1D model and treating \mbox{e-m} interaction in many-body fashion only within a small active region consisting of few lattice sites around the F/I interface, our analysis captures essential features of the so-called zero-bias anomaly observed in both MgO- and AlO$_x$-based realistic 3D MTJs where the second derivative $d^2 I/dV_b^2$ (i.e., inelastic electron tunneling spectrum) of charge current exhibits sharp peaks of opposite sign on either side of the zero bias voltage.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin-Seebeck effect on the surface of topological insulator due to nonequilibrium spin-polarization parallel to the direction of thermally driven electronic transport

We study the transverse spin-Seebeck effect (SSE) on the surface of a three-dimensional topological insulator (TI) thin film, such as Bi$_2$Se$_3$, which is sandwiched between two normal metal leads. The temperature bias $ΔT$ applied between the leads generates surface charge current which becomes spin-polarized due to strong spin-orbit coupling on the TI surface, with polarization vector acquiring a component $P_x \simeq 60%$ {\em parallel to the direction of transport}. When the third nonmagnetic voltage probe is attached to the portion of the TI surface across its width $L_y$, pure spin current will be injected into the probe where the inverse spin Hall effect (ISHE) converts it into a voltage signal \mbox{$|V_\mathrm{ISHE}|^\mathrm{max}/ΔT \simeq 2.5$ $μ$V/K} (assuming the SH angle of Pt voltage probe and $L_y=1$ mm). The existence of predicted nonequilibrium spin-polarization parallel to the direction of electronic transport and the corresponding electron-driven SSE crucially relies on orienting quintuple layers (QLs) of Bi$_2$Se$_3$ {\em orthogonal} to the TI surface and {\em tilted} by $45^\circ$ with respect to the direction of transport. Our analysis is based on the Landauer-Büttiker-type formula for spin currents in the leads of a multi-terminal quantum-coherent junction, which is constructed using nonequilibrium Green function formalism within which we show how to take into account arbitrary orientation of QLs via the self-energy describing coupling between semi-infinite normal metal leads and TI.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin-to-charge conversion in lateral and vertical topological-insulator/ferromagnet heterostructures with microwave-driven precessing magnetization

Using the charge-conserving Floquet-Green function approach to open quantum systems driven by external time periodic potential, we analyze how spin current pumped (in the absence of any dc bias voltage) by the precessing magnetization of a ferromagnetic (F) layer is injected {\em laterally} into the interface with strong spin-orbit coupling (SOC) and converted into charge current flowing in the same direction. In the case of metallic interface with the Rashba SOC used in experiments [Nature Comm. {\bf 4}, 2944 (2013)], both spin $I^{S_α}$ and charge $I$ current flow within it where $I/I^{S_α} \simeq$ 2--8\% (depending on the precession cone angle), while for F/topological-insulator (F/TI) interface employed in related experiments (arXiv:1312.7091) the conversion efficiency is greatly enhanced $I/I^{S_α} \simeq$ 40--60\% due to perfect spin-momentum locking on the surface of TI. The spin-to-charge conversion occurs also when spin current is pumped {\em vertically} through the F/TI interface with smaller efficiency $I/I^{S_α} \sim 0.001\%$, but with charge current signal being sensitive to whether the Dirac fermions at the interface are massive or massless.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

How to construct the proper gauge-invariant density matrix in steady-state nonequilibrium: Applications to spin-transfer and spin-orbit torques

Experiments observing spin density and spin currents (responsible for, e.g., spin-transfer torque) in spintronic devices measure only the nonequilibrium contributions to these quantities, typically driven by injecting unpolarized charge current or by applying external time-dependent fields. On the other hand, theoretical approaches to calculate them operate with both the nonequilibrium (carried by electrons around the Fermi surface) and the equilibrium (carried by the Fermi sea electrons) contributions. Thus, an unambiguous procedure should remove the equilibrium contributions, thereby rendering the nonequilibrium ones which are measurable and satisfy the gauge-invariant condition according to which expectation values of physical quantities should not change when electric potential everywhere is shifted by a constant amount. Using the framework of nonequilibrium Green functions, we delineate such procedure which yields the proper gauge-invariant nonequilibrium density matrix in the linear-response and elastic transport regime for current-carrying steady state of an open quantum system connected to two macroscopic reservoirs. Its usage is illustrated by computing: (i) conventional spin-transfer torque (STT) in asymmetric F/I/F magnetic tunnel junctions (MTJs); (ii) unconventional STT in asymmetric N/I/F semi-MTJs with the strong Rashba spin-orbit coupling (SOC) at the I/F interface and injected current perpendicular to that plane; and (iii) current-driven spin density within a clean ferromagnetic Rashba spin-split two-dimensional electron gas (2DEG) which generates SO torque in laterally patterned N/F/I heterostructures when such 2DEG is located at the N/F interface and injected charge current flows parallel to the plane.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Negative differential resistance in graphene-nanoribbon/carbon-nanotube crossbars: A first-principles multiterminal quantum transport study

We simulate quantum transport between a graphene nanoribbon (GNR) and a single-walled carbon nanotube (CNT) where electrons traverse vacuum gap between them. The GNR covers CNT over a nanoscale region while their relative rotation is 90 degrees, thereby forming a four-terminal crossbar where the bias voltage is applied between CNT and GNR terminals. The CNT and GNR are chosen as either semiconducting (s) or metallic (m) based on whether their two-terminal conductance exhibits a gap as a function of the Fermi energy or not, respectively. We find nonlinear current-voltage (I-V) characteristics in all three investigated devices---mGNR-sCNT, sGNR-sCNT and mGNR-mCNT crossbars---which are asymmetric with respect to changing the bias voltage from positive to negative. Furthermore, the I-V characteristics of mGNR-sCNT crossbar exhibits negative differential resistance (NDR) with low onset voltage $V_\mathrm{NDR} \simeq 0.25$ V and peak-to-valley current ratio $\simeq 2.0$. The overlap region of the crossbars contains only $\simeq 460$ carbon and hydrogen atoms which paves the way for nanoelectronic devices ultrascaled well below the smallest horizontal length scale envisioned by the international technology roadmap for semiconductors. Our analysis is based on the nonequilibrium Green function formalism combined with density functional theory (NEGF-DFT), where we also provide an overview of recent extensions of NEGF-DFT framework (originally developed for two-terminal devices) to multiterminal devices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Edge currents and nanopore arrays in zigzag and chiral graphene nanoribbons as a route toward high-$ZT$ thermoelectrics

We analyze electronic and phononic quantum transport through zigzag or chiral graphene nanoribbons (GNRs) perforated with an array of nanopores. Since local charge current profiles in these GNRs are peaked around their edges, drilling nanopores in their interior does not affect such edge charge currents while drastically reducing heat current carried by phonons in sufficiently long wires. The combination of these two effects can yield highly efficient thermoelectric devices with maximum $ZT \simeq 11$ at liquid nitrogen temperature and $ZT \simeq 4$ at room temperature achieved in $\sim 1$ $μ$m long zigzag GNRs with nanopores of variable diameter and spacing between them. Our analysis is based on the $π$-orbital tight-binding Hamiltonian with up to third nearest-neighbor hopping for electronic subsystem, the empirical fourth-nearest-neighbor model for phononic subsystem, and nonequilibrium Green function formalism to study quantum transport in both of these models.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Magnetoresistance and negative differential resistance in Ni/Graphene/Ni vertical heterostructures driven by finite bias voltage: A first-principles study

Using the nonequilibrium Green function formalism combined with density functional theory, we study finite-bias quantum transport in Ni/Gr_n/Ni vertical heterostructures where $n$ graphene layers are sandwiched between two semi-infinite Ni(111) electrodes. We find that recently predicted "pessimistic" magnetoresistance of 100% for $n \ge 5$ junctions at zero bias voltage $V_b \rightarrow 0$, persists up to $V_b \simeq 0.4$ V, which makes such devices promising for spin-torque-based device applications. In addition, for parallel orientations of the Ni magnetizations, the $n=5$ junction exhibits a pronounced negative differential resistance as the bias voltage is increased from $V_b=0$ V to $V_b \simeq 0.5$ V. We confirm that both of these nonequilibrium effects hold for different types of bonding of Gr on the Ni(111) surface while maintaining Bernal stacking between individual Gr layers.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Spin-transfer torque and spin-polarization in topological-insulator/ferromagnet vertical heterostructures

We predict an unconventional spin-transfer torque (STT) acting on the magnetization of a free ferromagnetic (F) layer within N/TI/F vertical heterostructures which originates from strong spin-orbit coupling (SOC) on the surface of a three-dimensional topological insulator (TI), as well as from charge current becoming spin-polarized in the direction of transport as it flows from the normal metal (N) across the bulk of the TI slab. Unlike conventional STT in symmetric F'/I/F magnetic tunnel junctions, where only the in-plane STT component is non-zero in the linear response, both the in-plane and perpendicular torque are sizable in N/TI/F junctions while not requiring fixed F' layer as spin-polarizer which is advantageous for spintronic applications. Using the nonequilibrium Born-Oppenheimer treatment of interaction between fast conduction electrons and slow magnetization, we derive a general Keldysh Green function-based STT formula which makes it possible to analyze torque in the presence of SOC either in the bulk or at the interface of the free F layer.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Charge pumping by magnetization dynamics in magnetic and semi-magnetic tunnel junctions with interfacial Rashba or bulk extrinsic spin-orbit couplings

We develop a time-dependent nonequilibrium Green function (NEGF) approach to the problem of spin pumping by precessing magnetization in one of the ferromagnetic layers within F/I/F magnetic tunnel junctions (MTJs) or F/I/N semi-MTJs in the presence of intrinsic Rashba spin-orbit coupling (SOC) at the F/I interface or the extrinsic SOC in the bulk of F layers of finite thickness (F-ferromagnet; N-normal metal; I-insulating barrier). To express the time-averaged pumped charge current, or the corresponding dc voltage signal in open circuits that was measured in recent experiments on semi-MTJs [T. Moriyama et al., Phys. Rev. Lett. 100, 067602 (2008)], we construct a novel solution for the double-time-Fourier-transformed NEGFs. The two energy arguments of NEGFs in this representation are connected by the Floquet theorem describing multiphoton emission and absorption processes. Within this fully quantum-mechanical treatment of the conduction electrons, we find that: (i) only in the presence of the interfacial Rashba SOC the non-zero dc pumping voltage in F/I/N semi-MTJ can emerge at the adiabatic level (i.e., proportional to microwave frequency); (ii) a unique signature of this charge pumping phenomenon, which disappears if Rashba SOC is not located with the precessing F layer, is dc pumping voltage that changes sign as the function of the precession cone angle; (iii) unlike standard spin pumping in the absence of SOCs, where one emitted or absorbed microwave photon is sufficient to match the exact solution in the frame rotating with the magnetization, the presence of the Rashba SOC requires to take into account up to ten photons in order to reach the asymptotic value of pumped charge current; (iv) disorder within F/I/F MTJs can enhance the dc pumping voltage in the quasiballistic transport regime; ...

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preprint2011arXiv

DNA nucleotide-specific modulation of μA transverse edge currents through a metallic graphene nanoribbon with a nanopore

We propose two-terminal devices for DNA sequencing which consist of a metallic graphene nanoribbon with zigzag edges (ZGNR) and a nanopore in its interior through which the DNA molecule is translocated. Using the nonequilibrium Green functions combined with density functional theory, we demonstrate that each of the four DNA nucleotides inserted into the nanopore, whose edge carbon atoms are passivated by either hydrogen or nitrogen, will lead to a unique change in the device conductance. Unlike other recent biosensors based on transverse electronic transport through DNA nucleotides, which utilize small (of the order of pA) tunneling current across a nanogap or a nanopore yielding a poor signal-to-noise ratio, our device concept relies on the fact that in ZGNRs local current density is peaked around the edges so that drilling a nanopore away from the edges will not diminish the conductance. Inserting a DNA nucleotide into the nanopore affects the charge density in the surrounding area, thereby modulating edge conduction currents whose magnitude is of the order of μA at bias voltage ~ 0.1 V. The proposed biosensor is not limited to ZGNRs and it could be realized with other nanowires supporting transverse edge currents, such as chiral GNRs or wires made of two-dimensional topological insulators.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

First-principles quantum transport modeling of thermoelectricity in single-molecule nanojunctions with graphene nanoribbon electrodes

We overview nonequilibrium Green function combined with density functional theory (NEGF-DFT) modeling of independent electron and phonon transport in nanojunctions with applications focused on a new class of thermoelectric devices where a single molecule is attached to two metallic zigzag graphene nanoribbons (ZGNRs) via highly transparent contacts. Such contacts make possible injection of evanescent wavefunctions from ZGNRs, so that their overlap within the molecular region generates a peak in the electronic transmission. Additionally, the spatial symmetry properties of the transverse propagating states in the ZGNR electrodes suppress hole-like contributions to the thermopower. Thus optimized thermopower, together with diminished phonon conductance through a ZGNR/molecule/ZGNR inhomogeneous structure, yields the thermoelectric figure of merit ZT~0.5 at room temperature and 0.5<ZT<2.5 below liquid nitrogen temperature. The reliance on evanescent mode transport and symmetry of propagating states in the electrodes makes the electronic-transport-determined power factor in this class of devices largely insensitive to the type of sufficiently short conjugated organic molecule, which we demonstrate by showing that both 18-annulene and C10 molecule sandwiched by the two ZGNR electrodes yield similar thermopower. Thus, one can search for molecules that will further reduce the phonon thermal conductance (in the denominator of ZT) while keeping the electronic power factor (in the nominator of ZT) optimized. We also show how often employed Brenner empirical interatomic potential for hydrocarbon systems fails to describe phonon transport in our single-molecule nanojunctions when contrasted with first-principles results obtained via NEGF-DFT methodology.

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preprint2011arXiv

Multiterminal single-molecule--graphene-nanoribbon thermoelectric devices with gate-voltage tunable figure of merit ZT

We study thermoelectric devices where a single 18-annulene molecule is connected to metallic zigzag graphene nanoribbons (ZGNR) via highly transparent contacts that allow for injection of evanescent wave functions from ZGNRs into the molecular ring. Their overlap generates a peak in the electronic transmission, while ZGNRs additionally suppress hole-like contributions to the thermopower. Thus optimized thermopower, together with suppression of phonon transport through ZGNR-molecule-ZGNR structure, yield the thermoelectric figure of merit ZT ~ 0.5 at room temperature and 0.5 < ZT < 2.5 below liquid nitrogen temperature. Using the nonequilibrium Green function formalism combined with density functional theory, recently extended to multiterminal devices, we show how the transmission resonance can also be manipulated by the voltage applied to a third ZGNR electrode, acting as the top gate covering molecular ring, to tune the value of ZT.

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preprint2011arXiv

Quantum coherence and its dephasing in the giant spin Hall effect and nonlocal voltage generated by magnetotransport through multiterminal graphene bars

Motivated by the recent experimental observation [D. A. Abanin et al., Science 323, 328 (2011)] of nonlocality in magnetotransport near the Dirac point in six-terminal graphene Hall bars, for a wide range of temperatures and magnetic fields, we develop a nonequilibrium Green function (NEGF) theory of this phenomenon. In the phase-coherent regime and strong magnetic field, we find large spin Hall (SH) conductance in four-terminal bridges, where the SH current is pure only at the Dirac point (DP), as well as the nonlocal voltage at a remote location in six-terminal bars where the direct and inverse SH effect operate at the same time. The "momentum-relaxing" dephasing reduces their values at the DP by two orders of magnitude while concurrently washing out any features away from the DP. Our theory is based on the Meir-Wingreen formula with dephasing introduced via phenomenological many-body self-energies, which is then linearized for multiterminal geometries to extract currents and voltages.

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preprint2010arXiv

Microwave-driven ferromagnet--topological-insulator heterostructures: The prospect for giant spin battery effect and quantized charge pump devices

We study heterostructures where a two-dimensional topological insulator (TI) is attached to two normal metal (NM) electrodes while an island of a ferromagnetic insulator (FI) with precessing magnetization covers a portion of its lateral edges to induce time-dependent exchange field underneath via the magnetic proximity effect. When the FI island covers both lateral edges, such device pumps pure spin current in the absence of any bias voltage, thereby acting as an efficient spin battery with giant output current even at very small microwave power input driving the precession. When only one lateral edge is covered by the FI island, both charge and spin current are pumped into the NM electrodes. We delineate conditions for the corresponding conductances (current-to-microwave-frequency ratio) to be quantized in a wide interval of precession cone angles, which is robust with respect to weak disorder and can be further extended by changes in device geometry.

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preprint2010arXiv

Quantum-interference-controlled three-terminal molecular transistors based on a single ring-shaped-molecule connected to graphene nanoribbon electrodes

We study all-carbon-hydrogen molecular transistors where zigzag graphene nanoribbons play the role of three metallic electrodes connected to a ring-shaped 18-annulene molecule. Using the nonequilibrium Green function formalism combined with density functional theory, recently extended to multiterminal devices, we show that the proposed nanostructures exhibit exponentially small transmission when the source and drain electrodes are attached in a configuration that ensures destructive interference of electron paths around the ring. The third electrode, functioning either as an attached infinite-impedance voltage probe or as an "air-bridge" top gate covering half of molecular ring, introduces dephasing that brings the transistor into the "on" state with its transmission in the latter case approaching the maximum limit for a single conducting channel device. The current through the latter device can also be controlled in the far-from-equilibrium regime by applying a gate voltage.

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preprint2009arXiv

Electron density and transport in top-gated graphene nanoribbon devices: First-principles Green function algorithms for systems containing large number of atoms

The recent fabrication of graphene nanoribbon (GNR) field-effect transistors poses a challenge for first-principles modeling of carbon nanoelectronics due to many thousand atoms present in the device. The state of the art quantum transport algorithms, based on the nonequilibrium Green function formalism combined with the density functional theory (NEGF-DFT), were originally developed to calculate self-consistent electron density in equilibrium and at finite bias voltage (as a prerequisite to obtain conductance or current-voltage characteristics, respectively) for small molecules attached to metallic electrodes where only a few hundred atoms are typically simulated. Here we introduce combination of two numerically efficient algorithms which make it possible to extend the NEGF-DFT framework to device simulations involving large number of atoms. We illustrate fusion of these two algorithms into the NEGF-DFT-type code by computing charge transfer, charge redistribution and conductance in zigzag-GNR/variable-width-armchair-GNR/zigzag-GNR two-terminal device covered with a gate electrode made of graphene layer as well. The total number of carbon and edge-passivating hydrogen atoms within the simulated central region of this device is ~7000. Our self-consistent modeling of the gate voltage effect suggests that rather large gate voltage might be required to shift the band gap of the proposed AGNR interconnect and switch the transport from insulating into the regime of a single open conducting channel.

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preprint2009arXiv

Inverse quantum spin Hall effect generated by spin pumping from precessing magnetization into a graphene-based two-dimensional topological insulator

We propose a multiterminal nanostructure for electrical probing of the quantum spin Hall effect (QSHE) in two-dimensional (2D) topological insulators. The device consists of a ferromagnetic (FM) island with precessing magnetization that pumps (in the absence of any bias voltage) pure spin current symmetrically into the left and right adjacent 2D TIs modeled as graphene nanoribbons with the intrinsic spin-orbit (SO) coupling. The QSH regime of the six-terminal TI|FM|TI nanodevice, attached to two longitudinal and four transverse normal metal electrodes, is characterized by the SO-coupling-induced energy gap, chiral spin-filtered edge states within finite length TI regions, and quantized spin Hall conductance when longitudinal bias voltage is applied, despite the presence of the FM island. The same unbiased device, but with precessing magnetization of the central FM island, blocks completely pumping of total spin and charge currents into the longitudinal electrodes while generating DC transverse charge Hall currents. Although these transverse charge currents are not quantized, their induction together with zero longitudinal charge current is a unique electrical response of TIs to pumped pure spin current that cannot be mimicked by SO-coupled but topologically trivial systems. In the corresponding two-terminal inhomogeneous TI|FM|TI nanostructures, we image spatial profiles of local spin and charge currents within TIs which illustrate transport confined to chiral spin-filtered edges states while revealing concomitantly the existence of interfacial spin and charge currents flowing around TI|FM interfaces and penetrating into the bulk of TIs over some short distance.

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preprint2001arXiv

Reduction of Josephson critical current in short ballistic SNS weak links

We present fully self-consistent calculations of the thermodynamic properties of three-dimensional clean SNS Josephson junctions, where S is an s-wave short-coherence-length superconductor and N is a clean normal metal. The junction is modeled on an infinite cubic lattice such that the transverse width of the S is the same as that of the N, and its thickness is tuned from the short to long limit. Both the reduced order parameter near the SN boundary and the short coherence length depress the critical Josephson current $I_c$, even in short junctions. This is contrasted with recent measurements on SNS junctions finding much smaller $I_cR_N$ products than expected from the standard (non-self consistent and quasiclassical) predictions. We also find unusual current-phase relations, a ``phase anti-dipole'' spatial distribution of the self-consistently determined contribution to the macroscopic phase, and an ``unexpected'' minigap in the local density of states within the N region.

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