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Kab-Jin Kim

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Published work

7 published item(s)

preprint2022arXiv

Efficient conversion of orbital Hall current to spin current for spin-orbit torque switching

Spin Hall effect, an electric generation of spin current, allows for efficient control of magnetization. Recent theory revealed that orbital Hall effect creates orbital current, which can be much larger than spin Hall-induced spin current. However, orbital current cannot directly exert a torque on a ferromagnet, requiring a conversion process from orbital current to spin current. Here, we report two effective methods of the conversion through spin-orbit coupling engineering, which allows us to unambiguously demonstrate orbital-current-induced spin torque, or orbital Hall torque. We find that orbital Hall torque is greatly enhanced by introducing either a rare-earth ferromagnet Gd or a Pt interfacial layer with strong spin-orbit coupling in Cr/ferromagnet structures, indicating that the orbital current generated in Cr is efficiently converted into spin current in the Gd or Pt layer. Furthermore, we show that the orbital Hall torque can facilitate the reduction of switching current of perpendicular magnetization in spin-orbit-torque-based spintronic devices.

preprint2020arXiv

The dynamics of a domain wall in ferrimagnets driven by spin-transfer torque

The spin-transfer-torque-driven (STT-driven) dynamics of a domain wall in an easy-axis rare-earth transition-metal ferrimagnet is investigated theoretically and numerically in the vicinity of the angular momentum compensation point $T_A$, where the net spin density vanishes. The particular focus is given on the unusual interaction of the antiferromagnetic dynamics of a ferrimagnetic domain wall and the adiabatic component of STT, which is absent in antiferromagnets but exists in the ferrimagnets due to the dominant coupling of conduction electrons to transition-metal spins. Specifically, we first show that the STT-induced domain-wall velocity changes its sign across $T_A$ due to the sign change of the net spin density, giving rise to a phenomenon unique to ferrimagnets that can be used to characterize $T_A$ electrically. It is also shown that the frequency of the STT-induced domain-wall precession exhibits its maximum at $T_A$ and it can approach the spin-wave gap at sufficiently high currents. Lastly, we report a numerical observation that, as the current density increases, the domain-wall velocity starts to deviate from the linear-response result, calling for a more comprehensive theory for the domain-wall dynamics in ferrimagnets driven by a strong current.

preprint2016arXiv

Giant modulation of the magnetic domain size induced by an electric field

The electric field (EF) effect on the magnetic domain structure of a Pt/Co system was studied, where an EF was applied to the top surface of the Co layer. The width of the maze domain was significantly modified by the application of the EF at a temperature slightly below the Curie temperature. After a detailed analysis, a change in the exchange stiffness induced by the EF application was suggested to dominate the modulation of the domain width observed in the experiment. The accumulation of electrons at the surface of the Co layer resulted in an increase of the exchange stiffness and the Curie temperature. The result was consistent with the recent theoretical prediction.

preprint2015arXiv

Room temperature write-read operations in antiferromagnetic memory

B2-ordered FeRh has been known to exhibit antiferromagnetic-ferromagnetic (AF-F) phase transitions in the vicinity of room temperature. Manipulation of the Néel order via AF-F phase transition and recent experimental observation of the anisotropic magnetoresistance in antiferromagnetic FeRh has proven that FeRh is a promising candidate for antiferromagnetic memory material. In this work, we demonstrate sequential write and read operations in antiferromagnetic memory resistors made of B2-orderd FeRh thin films by a magnetic field and electric current only. Our demonstration of writing and reading at ambient room temperature opens a realistic pathway towards operational antiferromagnetic memory devices.

preprint2015arXiv

Soliton-like magnetic domain wall motion induced by the interfacial Dzyaloshinskii-Moriya interaction

Topological defects such as magnetic solitons, vortices, Bloch lines, and skyrmions have started to play an important role in modern magnetism because of their extraordinary stability, which can be exploited in the production of memory devices. Recently, a novel type of antisymmetric exchange interaction, namely the Dzyaloshinskii-Moriya interaction (DMI), has been uncovered and found to influence the formation of topological defects. Exploring how the DMI affects the dynamics of topological defects is therefore an important task. Here we investigate the dynamic domain wall (DW) under a strong DMI and find that the DMI induces an annihilation of topological vertical Bloch lines (VBLs) by lifting the four-fold degeneracy of the VBL. As a result, velocity reduction originating from the Walker breakdown is completely suppressed, leading to a soliton-like constant velocity of the DW. Furthermore, the strength of the DMI, which is the key factor for soliton-like DW motion, can be quantified without any side effects possibly arising from current-induced torques or extrinsic pinnings in magnetic films. Our results therefore shed light on the physics of dynamic topological defects, which paves the way for future work in topology-based memory applications.

preprint2010arXiv

Electric Control of Multiple Domain Walls in Pt/Co/Pt Nanotrack with Perpendicular Magnetic Anisotropy

Electric control of multiple domain walls (DWs) motion is demonstrated by Pt/Co/Pt nanotracks with perpendicular magnetic anisotropy. Due to the weak microstructural disorders with small DW propagation field, the purely current-driven DW motion is achieved in the creep regime at current densities less than 10^7 A/cm^2 at room temperature. It is confirmed that by use of a scanning magneto-optical Kerr effect microscope, several DWs are simultaneously and identically displaced by the same distance in the same direction. Utilizing such DWs motion, we succeed to realize random bits writing and transferring as a device prototype of four-bit shift registers.

preprint2010arXiv

Universality between current- and field-driven domain wall dynamics in ferromagnetic nanowires

Spin-polarized electric current exerts torque on local magnetic spins, resulting in magnetic domain-wall (DW) motion in ferromagnetic nanowires. Such current-driven DW motion opens great opportunities toward next-generation magnetic devices controlled by current instead of magnetic field. However, the nature of the current-driven DW motion--considered qualitatively different from magnetic-field-driven DW motion--remains yet unclear mainly due to the painfully high operation current densities J_OP, which introduce uncontrollable experimental artefacts with serious Joule heating. It is also crucial to reduce J_OP for practical device operation. By use of metallic Pt/Co/Pt nanowires with perpendicular magnetic anisotropy, here we demonstrate DW motion at current densities down to the range of 10^9 A/m^2--two orders smaller than existing reports. Surprisingly the current-driven motion exhibits a scaling behaviour identical to the field-driven motion and thus, belongs to the same universality class despite their qualitative differences. Moreover all DW motions driven by either current or field (or by both) collapse onto a single curve, signalling the unification of the two driving mechanisms. The unified law manifests non-vanishing current efficiency at low current densities down to the practical level, applicable to emerging magnetic nanodevices.