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Researcher profile

K. Sethupathi

K. Sethupathi contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.supr-con

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Published work

4 published item(s)

preprint2022arXiv

Signature of a randomness-driven spin-liquid state in a frustrated magnet

Collective behaviour of electrons, frustration induced quantum fluctuations and entanglement in quantum materials underlie some of the emergent quantum phenomena with exotic quasi-particle excitations that are highly relevant for technological applications. Herein, we present our thermodynamic and muon spin relaxation measurements, complemented by ab initio density functional theory and exact diagonalization results, on the recently synthesized frustrated antiferromagnet Li4CuTeO6, in which Cu2+ ions (S = 1/2) constitute disordered spin chains and ladders along the crystallographic [101] direction with weak random inter-chain couplings. Our thermodynamic experiments detect neither long-range magnetic ordering nor spin freezing down to 45 mK despite the presence of strong antiferromagnetic interaction between Cu2+ moments leading to a large effective Curie-Weiss temperature of -154 K. Muon spin relaxation results are consistent with thermodynamic results. The temperature and magnetic field scaling of magnetization and specific heat reveal a data collapse pointing towards the presence of random-singlets within a disorder-driven correlated and dynamic ground-state in this frustrated antiferromagnet.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Effect of interfacial oxidation layer in spin pumping experiments on Ni$_{80}$Fe$_{20}$/SrIrO$_3$ heterostructures

SrIrO$_3$ with its large spin-orbit coupling and low charge conductivity has emerged as a potential candidate for efficient spin-orbit torque magnetization control in spintronic devices. We here report on the influence of an interfacial oxide layer on spin pumping experiments in Ni$_{80}$Fe$_{20}$ (NiFe)/SrIrO$_3$ bilayer heterostructures. To investigate this scenario we have carried out broadband ferromagnetic resonance (BBFMR) measurements, which indicate the presence of an interfacial antiferromagnetic oxide layer. We performed in-plane BBFMR experiments at cryogenic temperatures, which allowed us to simultaneously study dynamic spin pumping properties (Gilbert damping) and static magnetic properties (such as the effective magnetization and magnetic anisotropy). The results for NiFe/SrIrO$_3$ bilayer thin films were analyzed and compared to those from a NiFe/NbN/SrIrO$_3$ trilayer reference sample, where a spin-transparent, ultra-thin NbN layer was inserted to prevent oxidation of NiFe. At low temperatures, we observe substantial differences in the magnetization dynamics parameters of these samples, which can be explained by an antiferromagnetic interfacial layer in the NiFe/SrIrO$_3$ bilayers.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Sign reversal of anomalous Hall conductivity and magnetoresistance in cubic non-collinear antiferromagnet Mn$_3$Pt thin films

The two dimensional kagome spin lattice structure of Mn atoms in the family of Mn$_3$X non-collinear antiferromagnets are providing substantial excitement in the exploration of Berry curvature physics and the associated non-trivial magnetotransport responses. Much of these studies are performed in the hexagonal systems, mainly Mn$_3$Sn and Mn$_3$Ge, with the kagome planes having their normal along the [001] direction. In this manuscript, we report our study in the cubic Mn$_3$Pt thin films with their kagome planes normal to the [111] crystal axis. Our studies reveal a hole conduction dominant Hall response with a non-monotonic temperature dependence of anomalous Hall conductivity (AHC), increasing from 9 $Ω^{-1}$cm$^{-1}$ at room temperature to 29 $Ω^{-1}$cm$^{-1}$ at 100 K, followed by a drop and unexpected sign-reversal at lower temperatures. Similar sign reversal is also observed in magnetoresistance measurements. We attribute this sign reversal to the transition from a Berry curvature dominated AHC at high temperature to a weak canted ferromagnetic AHC response at lower temperature, below 70 K, caused by the reorientation of Mn moments out of the kagome plane. Our above results in thin films of Mn$_3$Pt make advances in their integration with room temperature antiferromagnetic spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Wohlleben Effect and Emergent Pi junctions in superconducting Boron doped Diamond thin films

Diamond is an excellent band insulator. However, boron (B) doping is known to induce superconductivity. We present two interesting effects in superconducting B doped diamond (BDD) thin films: i) Wohlleben effect (paramagnetic Meissner effect, PME) and ii) a low field spin glass like susceptibility anomaly. We have performed electrical and magnetic measurements (under pressure in one sample) at dopings (1.4 , 2.6 and 3.6) X 1021 cm-3, in a temperature range 2 - 10 K. PME, a low field anomaly in inhomogeneous superconductors could arise from flux trapping, flux compression, or for non-trivial reason such as emergent Josephson Pi junctions. Joint occurrence of PME and spin glass type anomalies points to possible emergence of Pi junctions. BDD is a disordered s-wave superconductor; and Pi junctions could be produced by spin flip scattering of spin half moments when present at weak superconducting regions (Bulaevski et al. 1978). A frustrated network of 0 and Pi junctions will result (Kusmartsev et al. 1992) in a distribution of spontaneous equilibrium supercurrents, a phase glass state. Anderson localized spin half spinons embedded in a metallic fluid (two fluid model of Bhatt et al.) could create Pi junction by spin flip scattering. Our findings are consistent with presence of Pi junctions, invoked to explain their (Bhattacharyya et al.) observation of certain resistance anomaly in BDD.

0 citations0 reviewsNo code linkedOpen access