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Researcher profile

K. Muraki

K. Muraki contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.dis-nncond-mat.other

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Published work

6 published item(s)

preprint2021arXiv

Gate tuning of fractional quantum Hall states in InAs two-dimensional electron gas

We report the observation of fractional quantum Hall (FQH) effects in a two-dimensional electron gas (2DEG) confined to an InAs/AlGaSb quantum well, using a dual-gated Hall-bar device allowing for the independent control of the vertical electric field and electron density. At a magnetic field of 24 T, we observe FQH states at several filling factors, namely $ν= 5/3$, $2/3$, and $1/3$, in addition to the $ν= 4/3$ previously reported for an InAs 2DEG. The $ν= 4/3$ and $5/3$ states, which are absent at zero back-gate voltage, emerge as the quantum well is made more symmetric by applying a positive back-gate voltage. The dependence of zero-field electron mobility on the quantum-well asymmetry reveals a significant contribution of interface-roughness scattering, with much stronger scattering at the lower InAs/AlGaSb interface. However, the dependence of the visibility of the FQH effects on the quantum-well asymmetry is not entirely consistent with that of mobility, suggesting that a different source of disorder is also at work.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Impact of epitaxial strain on the topological-nontopological phase diagram and semimetallic behavior of InAs/GaSb composite quantum wells

We study the influence of epitaxial strain on the electronic properties of InAs/GaSb composite quantum wells (CQWs), host structures for quantum spin Hall insulators, by transport measurements and eight-band $\mathbf{k\cdot p}$ calculations. Using different substrates and buffer layer structures for crystal growth, we prepare two types of samples with vastly different strain conditions. CQWs with a nearly strain-free GaSb layer exhibit a resistance peak at the charge neutrality point that reflects the opening of a topological gap in the band-inverted regime. In contrast, for CQWs with 0.50\% biaxial tensile strain in the GaSb layer, semimetallic behavior indicating a gap closure is found for the same degree of band inversion. Additionally, with the tensile strain, the boundary between the topological and nontopological regimes is located at a larger InAs thickness. Eight-band $\mathbf{k\cdot p}$ calculations reveal that tensile strain in GaSb not only shifts the phase boundary but also significantly modifies the band structure, which can result in the closure of an indirect gap and make the system semimetallic even in the topological regime. Our results thus provide a global picture of the topological-nontopological phase diagram as a function of layer thicknesses and strain.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Suppression of Gate Screening on Edge Magnetoplasmons by Highly Resistive ZnO Gate

We investigate a way to suppress high-frequency coupling between a gate and low-dimensional electron systems in the gigahertz range by measuring the velocity of edge magnetoplasmons (EMPs) in InAs quantum Hall systems.We compare the EMPvelocity in three samples with different electromagnetic environments-one has a highly resistive zinc oxide (ZnO) top gate, another has a normal metal (Ti/Au) top gate, and the other does not have a gate. The measured EMP velocity in the ZnO gate sample is one order of magnitude larger than that in the Ti/Au gate sample and almost the same as that in the ungated sample. As is well known, the smaller velocity in the Ti/Au gate sample is due to the screening of the electric field in EMPs. The suppression of the gate screening effect in the ZnO gate sample allows us to measure the velocity of unscreened EMPs while changing the electron density. It also offers a way to avoid unwanted high-frequency coupling between quantum Hall edge channels and gate electrodes.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Impact of graphene quantum capacitance on transport spectroscopy

We demonstrate experimentally that graphene quantum capacitance $C_{\mathrm{q}}$ can have a strong impact on transport spectroscopy through the interplay with nearby charge reservoirs. The effect is elucidated in a field-effect-gated epitaxial graphene device, in which interface states serve as charge reservoirs. The Fermi-level dependence of $C_{\mathrm{q}}$ is manifested as an unusual parabolic gate voltage ($V_{\mathrm{g}}$) dependence of the carrier density, centered on the Dirac point. Consequently, in high magnetic fields $B$, the spectroscopy of longitudinal resistance ($R_{xx}$) vs. $V_{\mathrm{g}}$ represents the structure of the unequally spaced relativistic graphene Landau levels (LLs). $R_{xx}$ mapping vs. $V_{\mathrm{g}}$ and $B$ thus reveals the vital role of the zero-energy LL on the development of the anomalously wide $ν=2$ quantum Hall state.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Magnetic-Field Dependence of Tunnel Couplings in Carbon Nanotube Quantum Dots

By means of sequential and cotunneling spectroscopy, we study the tunnel couplings between metallic leads and individual levels in a carbon nanotube quantum dot. The levels are ordered in shells consisting of two doublets with strong- and weak-tunnel couplings, leading to gate-dependent level renormalization. By comparison to a one- and two-shell model, this is shown to be a consequence of disorder-induced valley mixing in the nanotube. Moreover, a parallel magnetic field is shown to reduce this mixing and thus suppress the effects of tunnel renormalization.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Intrinsic gap and exciton condensation in the nu_T=1 bilayer system

We investigate the quasiparticle excitation of the bilayer quantum Hall (QH) system at total filling factor $ν_{\mathrm{T}} = 1$ in the limit of negligible interlayer tunneling under tilted magnetic field. We show that the intrinsic quasiparticle excitation is of purely pseudospin origin and solely governed by the inter- and intra-layer electron interactions. A model based on exciton formation successfully explains the quantitative behavior of the quasiparticle excitation gap, demonstrating the existence of a link between the excitonic QH state and the composite fermion liquid. Our results provide a new insight into the nature of the phase transition between the two states.

0 citations0 reviewsNo code linkedOpen access