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K. Muraki

K. Muraki appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.str-elcond-mat.mtrl-scicond-mat.dis-nncond-mat.other

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Published work

10 published item(s)

preprint2021arXiv

Gate tuning of fractional quantum Hall states in InAs two-dimensional electron gas

We report the observation of fractional quantum Hall (FQH) effects in a two-dimensional electron gas (2DEG) confined to an InAs/AlGaSb quantum well, using a dual-gated Hall-bar device allowing for the independent control of the vertical electric field and electron density. At a magnetic field of 24 T, we observe FQH states at several filling factors, namely $ν= 5/3$, $2/3$, and $1/3$, in addition to the $ν= 4/3$ previously reported for an InAs 2DEG. The $ν= 4/3$ and $5/3$ states, which are absent at zero back-gate voltage, emerge as the quantum well is made more symmetric by applying a positive back-gate voltage. The dependence of zero-field electron mobility on the quantum-well asymmetry reveals a significant contribution of interface-roughness scattering, with much stronger scattering at the lower InAs/AlGaSb interface. However, the dependence of the visibility of the FQH effects on the quantum-well asymmetry is not entirely consistent with that of mobility, suggesting that a different source of disorder is also at work.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Impact of epitaxial strain on the topological-nontopological phase diagram and semimetallic behavior of InAs/GaSb composite quantum wells

We study the influence of epitaxial strain on the electronic properties of InAs/GaSb composite quantum wells (CQWs), host structures for quantum spin Hall insulators, by transport measurements and eight-band $\mathbf{k\cdot p}$ calculations. Using different substrates and buffer layer structures for crystal growth, we prepare two types of samples with vastly different strain conditions. CQWs with a nearly strain-free GaSb layer exhibit a resistance peak at the charge neutrality point that reflects the opening of a topological gap in the band-inverted regime. In contrast, for CQWs with 0.50\% biaxial tensile strain in the GaSb layer, semimetallic behavior indicating a gap closure is found for the same degree of band inversion. Additionally, with the tensile strain, the boundary between the topological and nontopological regimes is located at a larger InAs thickness. Eight-band $\mathbf{k\cdot p}$ calculations reveal that tensile strain in GaSb not only shifts the phase boundary but also significantly modifies the band structure, which can result in the closure of an indirect gap and make the system semimetallic even in the topological regime. Our results thus provide a global picture of the topological-nontopological phase diagram as a function of layer thicknesses and strain.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Suppression of Gate Screening on Edge Magnetoplasmons by Highly Resistive ZnO Gate

We investigate a way to suppress high-frequency coupling between a gate and low-dimensional electron systems in the gigahertz range by measuring the velocity of edge magnetoplasmons (EMPs) in InAs quantum Hall systems.We compare the EMPvelocity in three samples with different electromagnetic environments-one has a highly resistive zinc oxide (ZnO) top gate, another has a normal metal (Ti/Au) top gate, and the other does not have a gate. The measured EMP velocity in the ZnO gate sample is one order of magnitude larger than that in the Ti/Au gate sample and almost the same as that in the ungated sample. As is well known, the smaller velocity in the Ti/Au gate sample is due to the screening of the electric field in EMPs. The suppression of the gate screening effect in the ZnO gate sample allows us to measure the velocity of unscreened EMPs while changing the electron density. It also offers a way to avoid unwanted high-frequency coupling between quantum Hall edge channels and gate electrodes.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Long-lived binary tunneling spectrum in a quantum-Hall Tomonaga-Luttinger liquid

The existence of long-lived non-equilibrium states without showing thermalization, which has previously been demonstrated in time evolution of ultracold atoms, suggests the possibility of their spatial analogue in transport behavior of interacting electrons in solid-state systems. Here we report long-lived non-equilibrium states in one-dimensional edge channels in the integer quantum Hall regime. An indirect heating scheme in a counterpropagating configuration is employed to generate a non-trivial binary spectrum consisting of high- and low-temperature components. This unusual spectrum is sustained even after travelling 5 - 10 μm, much longer than the length for electronic relaxation (about 0.1 μm), without showing significant thermalization. This observation is consistent with the integrable model of Tomonaga-Luttinger liquid. The long-lived spectrum implies that the system is well described by non-interacting plasmons, which are attractive for carrying information for a long distance.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

NMR profiling of quantum electron solids in high magnetic fields

When the motion of electrons is restricted to a plane under a perpendicular magnetic field B, a variety of quantum phases emerge at low temperatures whose properties are dictated by the Coulomb interaction and its interplay with disorder. At very strong B, the sequence of fractional quantum Hall (FQH) liquid phases terminates in an insulating phase, which is widely believed to be due to the solidification of electrons into domains possessing Wigner crystal (WC) order. The existence of such WC domains is signaled by the emergence of microwave pinning-mode resonances, which reflect the mechanical properties characteristic of a solid. However, the most direct manifestation of the broken translational symmetry accompanying the solidification - the spatial modulation of particles' probability amplitude - has not been observed yet. Here, we demonstrate that nuclear magnetic resonance (NMR) provides a direct probe of the density topography of electron solids in the integer and fractional quantum Hall regimes. The data uncover quantum and thermal fluctuation of lattice electrons resolved on the nanometre scale. Our results pave the way to studies of other exotic phases with non-trivial spatial spin/charge order.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Impact of graphene quantum capacitance on transport spectroscopy

We demonstrate experimentally that graphene quantum capacitance $C_{\mathrm{q}}$ can have a strong impact on transport spectroscopy through the interplay with nearby charge reservoirs. The effect is elucidated in a field-effect-gated epitaxial graphene device, in which interface states serve as charge reservoirs. The Fermi-level dependence of $C_{\mathrm{q}}$ is manifested as an unusual parabolic gate voltage ($V_{\mathrm{g}}$) dependence of the carrier density, centered on the Dirac point. Consequently, in high magnetic fields $B$, the spectroscopy of longitudinal resistance ($R_{xx}$) vs. $V_{\mathrm{g}}$ represents the structure of the unequally spaced relativistic graphene Landau levels (LLs). $R_{xx}$ mapping vs. $V_{\mathrm{g}}$ and $B$ thus reveals the vital role of the zero-energy LL on the development of the anomalously wide $ν=2$ quantum Hall state.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Magnetic-Field Dependence of Tunnel Couplings in Carbon Nanotube Quantum Dots

By means of sequential and cotunneling spectroscopy, we study the tunnel couplings between metallic leads and individual levels in a carbon nanotube quantum dot. The levels are ordered in shells consisting of two doublets with strong- and weak-tunnel couplings, leading to gate-dependent level renormalization. By comparison to a one- and two-shell model, this is shown to be a consequence of disorder-induced valley mixing in the nanotube. Moreover, a parallel magnetic field is shown to reduce this mixing and thus suppress the effects of tunnel renormalization.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Plasmon transport in graphene investigated by time-resolved measurement

Plasmons, which are collective charge oscillations, offer the potential to use optical signals in nano-scale electric circuits. Recently, plasmonics using graphene have attracted interest, particularly because of the tunable plasmon frequency through the carrier density $n$. However, the $n$ dependence of the plasmon velocity is weak ($\propto n^{1/4}$) and it is difficult to tune the frequency over orders of magnitude. Here, we demonstrate that the velocity of plasmons in graphene can be changed over two orders of magnitude by applying a magnetic field $B$ and by the presence/absence of a gate; at high $B$, edge magnetoplasmons (EMPs), which are plasmons localized at the sample edge, are formed and their velocity depends on $B$ and the gate screening effect. The wide range tunability of the velocity and the observed low-loss plasmon transport encourage designing graphene nanostructures for plasmonics applications.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Fabrication and characterization of an induced GaAs single hole transistor

We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device consists of a p-type quantum dot, populated using an electric field rather than modulation doping. Low temperature transport measurements reveal periodic conductance oscillations due to Coulomb blockade. We find that the low frequency charge noise is comparable to that in modulation-doped GaAs single electron transistors (SETs), and almost an order of magnitude better than in silicon SETs.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Intrinsic gap and exciton condensation in the nu_T=1 bilayer system

We investigate the quasiparticle excitation of the bilayer quantum Hall (QH) system at total filling factor $ν_{\mathrm{T}} = 1$ in the limit of negligible interlayer tunneling under tilted magnetic field. We show that the intrinsic quasiparticle excitation is of purely pseudospin origin and solely governed by the inter- and intra-layer electron interactions. A model based on exciton formation successfully explains the quantitative behavior of the quasiparticle excitation gap, demonstrating the existence of a link between the excitonic QH state and the composite fermion liquid. Our results provide a new insight into the nature of the phase transition between the two states.

0 citations0 reviewsNo code linkedOpen access