Researcher profile

H. Hibino

H. Hibino contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.str-el cond-mat.mtrl-sci cond-mat.dis-nn cond-mat.other

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preprint2016arXiv

Shot noise generated by graphene p-n junctions in the quantum Hall effect regime

Owing to a linear and gapless band structure and a tunability of the charge carrier type, graphene offers a unique system to investigate transport of Dirac Fermions at p-n junctions (PNJs). In a magnetic field, combination of quantum Hall physics and the characteristic transport across PNJs leads to a fractionally quantized conductance associated with the mixing of electron-like and hole-like modes and their subsequent partitioning. The mixing and partitioning suggest that a PNJ could be used as an electronic beam-splitter. Here we report the shot noise study of the mode mixing process and demonstrate the crucial role of the PNJ length. For short PNJs, the amplitude of the noise is consistent with an electronic beam-splitter behavior, whereas, for longer PNJs, it is reduced by the energy relaxation. Remarkably, the relaxation length is much larger than typical size of mesoscopic devices, encouraging using graphene for electron quantum optics and quantum information processing.

preprint2014arXiv

Intrinsic and extrinsic decay of edge magnetoplasmons in graphene

We investigate intrinsic and extrinsic decay of edge magnetoplasmons (EMPs) in graphene quantum Hall (QH) systems by high-frequency electronic measurements. From EMP resonances in disk shaped graphene, we show that the dispersion relation of EMPs is nonlinear due to interactions, giving rise to intrinsic decay of EMP wavepacket. We also identify extrinsic dissipation mechanisms due to interaction with localized states in bulk graphene from the decay time of EMP wavepackets. We indicate that, owing to the unique linear and gapless band structure, EMP dissipation in graphene can be lower than that in GaAs systems.

preprint2012arXiv

Impact of graphene quantum capacitance on transport spectroscopy

We demonstrate experimentally that graphene quantum capacitance $C_{\mathrm{q}}$ can have a strong impact on transport spectroscopy through the interplay with nearby charge reservoirs. The effect is elucidated in a field-effect-gated epitaxial graphene device, in which interface states serve as charge reservoirs. The Fermi-level dependence of $C_{\mathrm{q}}$ is manifested as an unusual parabolic gate voltage ($V_{\mathrm{g}}$) dependence of the carrier density, centered on the Dirac point. Consequently, in high magnetic fields $B$, the spectroscopy of longitudinal resistance ($R_{xx}$) vs. $V_{\mathrm{g}}$ represents the structure of the unequally spaced relativistic graphene Landau levels (LLs). $R_{xx}$ mapping vs. $V_{\mathrm{g}}$ and $B$ thus reveals the vital role of the zero-energy LL on the development of the anomalously wide $ν=2$ quantum Hall state.

preprint2012arXiv

Plasmon transport in graphene investigated by time-resolved measurement

Plasmons, which are collective charge oscillations, offer the potential to use optical signals in nano-scale electric circuits. Recently, plasmonics using graphene have attracted interest, particularly because of the tunable plasmon frequency through the carrier density $n$. However, the $n$ dependence of the plasmon velocity is weak ($\propto n^{1/4}$) and it is difficult to tune the frequency over orders of magnitude. Here, we demonstrate that the velocity of plasmons in graphene can be changed over two orders of magnitude by applying a magnetic field $B$ and by the presence/absence of a gate; at high $B$, edge magnetoplasmons (EMPs), which are plasmons localized at the sample edge, are formed and their velocity depends on $B$ and the gate screening effect. The wide range tunability of the velocity and the observed low-loss plasmon transport encourage designing graphene nanostructures for plasmonics applications.

preprint2010arXiv

A breakthrough toward wafer-size epitaxial graphene transfer

The formation of graphene on any desirable substrate is extremely essential for the successful replacement of Si with graphene in all technological applications in the beyond-CMOS era. Recently, we observed that a Ti layer formed on epitaxial graphene by electron-beam evaporation has the sufficiently large area of contact with the surface of epitaxial graphene for the exfoliation process to take place. We also observed that the exfoliated FLG on the Ti layer can be easily transferred onto a SiO2/Si substrate. In this paper, we have proposed a new technique for transferring graphene having a large area of several square mm from the graphitized vicinal SiC substrate. Raman scattering spectroscopy and low-energy electron microscopy analysis have revealed that we can transfer mono-layer and bi-layer graphene onto the SiO2/Si substrate by using the proposed transfer process. The initial size of epitaxial graphene formed on the SiC substrate is the only limitation of the new transfer process. The transfer process is expected to become an extremely important technology that will mark the beginning of a new era in the field of graphene electronics.