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Researcher profile

K. Ishizaka

K. Ishizaka contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.supr-con

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Published work

4 published item(s)

preprint2020arXiv

Nanoscale imaging of unusual photo-acoustic waves in thin flake VTe$_2$

Controlling acoustic phonons, the carriers of sound and heat, has been attracting great attention toward the manipulation of sonic and thermal properties in nanometric devices. In particular, the photo-acoustic effect using ultrafast optical pulses has a promising potential to optically manipulate phonons in picoseconds time regime. However, its mechanism has been so far mostly based on the commonplace thermoelastic expansion in isotropic media, limiting the spectrum of potential applications. We investigate a conceptually new mechanism of photo-acoustic effect involving the structural instability, by utilizing a transition-metal dichalcogenide VTe$_2$ with the ribbon-type charge-density-wave (CDW). Ultrafast electron microscope imaging and diffraction measurements reveal the generation and propagation of unusual acoustic waves in the nanometric thin plate associated with the optically induced instantaneous charge-density-wave dissolution. Our results highlight the capability of photo-induced structural instability as a source of coherent acoustic waves.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Switching of band inversion and topological surface states by charge density wave

Topologically nontrivial materials host protected edge states associated with the bulk band inversion through the bulk-edge correspondence. Manipulating such edge states is highly desired for developing new functions and devices practically using their dissipation-less nature and spin-momentum locking. Here we introduce a transition-metal dichalcogenide VTe$_2$, that hosts a charge density wave (CDW) coupled with the band inversion involving V3$d$ and Te5$p$ orbitals. Spin- and angle-resolved photoemission spectroscopy with first-principles calculations reveal the huge anisotropic modification of the bulk electronic structure by the CDW formation, accompanying the selective disappearance of Dirac-type spin-polarized topological surface states that exist in the normal state. Thorough three dimensional investigation of bulk states indicates that the corresponding band inversion at the Brillouin zone boundary dissolves upon CDW formation, by transforming into anomalous flat bands. Our finding provides a new insight to the topological manipulation of matters by utilizing CDWs' flexible characters to external stimuli.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Evolution of electronic states and emergence of superconductivity in the polar semiconductor GeTe by doping valence-skipping In

GeTe is a chemically simple IV-VI semiconductor which bears a rich plethora of different physical properties induced by doping and external stimuli. These include, among others, ferromagnetism, ferroelectricity, phase-change memory functionality, and comparably large thermoelectric figure of merits. Here we report a superconductor - semiconductor - superconductor transition controlled by finely-tuned In doping. Our results moreover show the existence of a critical doping concentration around $x = 0.12$ in Ge$_{1-x}$In$_{x}$Te, where various properties take either an extremum or change their characters: The structure changes from polarly-rhombohedral to cubic, the resistivity sharply increases by orders of magnitude, the type of charge carriers changes from holes to electrons, and the density of states diminishes at the dawn of an emerging superconducting phase. By core-level photoemission spectroscopy we find indications of a change in the In-valence state from In$^{3+}$ to In$^{1+}$ with increasing $x$, suggesting that this system is a new promising playground to probe valence fluctuations and their possible impact on superconductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Radial spin texture in elemental tellurium with chiral crystal structure

The chiral crystal is characterized by a lack of mirror symmetry and an inversion center, resulting in the inequivalent right- and left-handed structures. In the noncentrosymmetric crystal structure, the spin and momentum of electrons are locked in the reciprocal space with the help of the spin-orbit interaction. To reveal the spin textures of chiral crystals, here we investigate the spin and electronic structure in p-type semiconductor elemental tellurium with a chiral crystal structure by using spin- and angle-resolved photoemission spectroscopy. Our data demonstrate that the highest valence band crossing the Fermi level has a spin component parallel to the electron momentum around the BZ corners. Significantly, we have also confirmed that the spin polarization is reversed in the crystal with the opposite chirality. The results indicate that the spin textures of the right- and left-handed chiral crystals are hedgehog-like, leading to unconventional magnetoelectric effects and nonreciprocal phenomena.

0 citations0 reviewsNo code linkedOpen access